SV6016DX LITTELFUSE | Alldatasheet
Document overview
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Technical content
Revised: 04/17/20 ©2020 Littelfuse, Inc Specifications are subject to change without notice. Thyristors
12 Amp High Junction Temperature SCRs
Description
this SV6016Dx high junction temperature SCR is ideal for unidirectional switches for phase control and general switching applications such as heating, motor control controls, converters / rectifiers and capacitive discharge ignitions. Standard phase control SCRs are triggered with few milliamperes of current at less than 1.5V potential. Features & Benefits
- RoHS compliant
- 150°C maximum junction temperature
- Surge capability up to 200 A at 60 Hz half cycle Main Features Symbol Value Unit IT(RMS) 16 A VDRM/VRRM 600 V IGT 6 mA Schematic Symbol
Applications
Typical applications include AC Generator (ACG) rectifiers, battery voltage regulators and generic converters and inrush current controller in various AC to DC applications. Additional applications include controls for power tools, home/brown good and white goods appliances. AK G RoHS Absolute Maximum Ratings Symbol Parameter Test Conditions Value Unit VDSM/VRSM Peak non-repetitive blocking voltage PW=100 μs VDRM/VRRM+100 V IT(RMS) RMS on-state current TC = 130°C 16 A IT(AV) Average on-state current TC = 130°C 10.2 A ITSM Peak non-repetitive surge current (single half cycle, TJ (initial) = 25°C) f = 50Hz 180 A f = 60Hz 200 I2t I2t Value for fusing tp = 8.3 ms 200 A2s di/dt Critical rate of rise of on-state current f = 60Hz; TJ = 150°C 100 A/μs IGM Peak gate current TJ = 150°C 4 A PG(AV) Average gate power dissipation TJ = 150°C 0.8 W Tstg Storage temperature range -40 to 150 TJ Operating junction temperature range -40 to 150
16 Amp High Junction Temperature SCR in DPAK pacakge
Revised: 04/17/20 ©2020 Littelfuse, Inc Specifications are subject to change without notice. Thyristors Electrical Characteristics (TJ = 25°C, unless otherwise specified) Symbol Test Conditions Value Unit IGT VD = 12V RL = 60 Ω MAX. 6 mA MIN. 1. 5 VGT VD = 12V RL = 60 Ω MAX. 1. 5 V dv/dt VD = 67% VDRM; gate open; TJ = 125°C MIN. 200 V/μs VD = 67% VDRM; gate open; TJ = 150°C 100 VGD VD = VDRM RL = 3.3 kΩ TJ = 150°C MIN. 0.2 V IH IT = 200mA (initial) MAX. 40 mA tq IT = 2A; tp = 50µs; dv/dt = 5V/µs; di/dt = 30A/µs MAX. 50 μs tgt IG = 2 x IGT PW = 15µs IT = 24A TYP . 2.3 μs Static Characteristics Thermal Resistances Symbol Parameter Value Unit Rθ(JC) Junction to case (AC) 1. 4 °C/W Symbol Test Conditions Value Unit VTM Component IT = 32A; tp = 380 µs MAX. 1. 6 V IDRM / IRRM VDRM = VRRM TJ = 25°C MAX. μATJ = 125°C 500 TJ = 150°C 2000 SV6016Dx Figure 1: Normalized DC Gat e T rigger Current vs. Junction T emperature Figure 2: Normalized DC Gat e T rigger Voltage vs. Junction T emperature Junction T emperature (TJ) -- (ºC) Ratio of IGT / IGT (TJ = 25°C) 0.0 0.4 0.8 1.2 1.6 2.0 -40- 15 10 35 60 85 11 01 35 150 Junction T emperature (TJ) -- (°C) Ratio of VGT / VGT (TJ = 25ºC) 0.0 -40- 15 10 35 60 85 11 01 35 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Revised: 04/17/20 ©2020 Littelfuse, Inc Specifications are subject to change without notice. Thyristors Figure 5: Power Dissipation (T ypical) vs. RMS On-State Current Figure 3: Normalized DC Holding Cur rent vs. Junction T emperature Figure 4: On-State Curr ent vs. On-State Voltage (T ypical) In tantaneous On-state Current (I T) –Amps In stantaneous On-state Voltage (VT) –V olts Figure 6: Maximum Allow able Case T emperature vs. RMS On-State Current 105 110 115 120 125 130 0246 81 01 21 41 61 8 RMS On-State Current [IT(RMS)] - Amps Maximum Allowable Case T emperature (TC ) - °C CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180° 135 140 145 150 155 Junction T emperature (TJ) - (°C) Ratio of IH / IH (TJ = 25°C) 0.0 0.4 0.8 1.2 1.6 2.0 -40- 15 10 35 60 85 11 01 35 150 SV6016Dx 04 81 21 62 02 42 83 2 Average On-State Power Dissipation [PD(AV)] -( Watts) RMS On-state Current [I T(RMS)] -( Amps) Figure 7: Maximum Allow able Case T emperature vs. Average On-State Current 100 105 110 115 120 125 130 012345 6789 10 11 Average On-State Current [IT(AVE) ] - Amps Maximum Allowable Case Temperature (TC)- °C CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180° 135 140 145 150 Figure 8: Peak Capacitor Discharge Current 100 1000 0.5 1.01 0.0 50.0 Pulse Current Duration (tw) - ms Peak Discharge Current (ITM) - Amps ITRM tW
Revised: 04/17/20 ©2020 Littelfuse, Inc Specifications are subject to change without notice. Thyristors Figure 9: Peak Capacitor Discharge Current Derating 100 1000 11 01 00 1000 Peak Surge( Non-repe/g415/g415ve) On-state Current(I TSM)-Amps Surge Current Dura/g415on--F ull Cycles Figure 10: Surge Peak On-Stat e Current vs. Number of Cycles SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS On-State Current: [I T(RMS)]: Maximum Rated Value at Specified Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 02 55 07 51 00 12 51 50 Case T emperature (TC) - ºC Normalized Peak Current Soldering Parameters Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus Temp) (TL) to peak 5°C/second max TS(max) to TL - Ramp-up Rate 5°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Time (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (t p) 20 – 40 seconds Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 280°C Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do
Revised: 04/17/20 ©2020 Littelfuse, Inc Specifications are subject to change without notice. Thyristors Physical Specifications Environmental Specifications Test Specifications and Conditions AC Blocking MIL-STD-750, M-1040, Cond A Applied Peak AC voltage @ 150°C for 1008 hours T emperature Cycling MIL-STD-750, M-1051, 100 cycles; -55°C to +150°C; 15-min dwell-time T emperature/ Humidity EIA / JEDEC, JESD22-A101 1008 hours; 160V - DC: 85°C; 85% rel humidity High T emp Storage MIL-STD-750, M-1031, 1008 hours; 150°C Low-T emp Storage 1008 hours; -40°C Resistance to Solder Heat MIL-STD-750 Method 2031 Solderability ANSI/J-STD-002, category 3, Test A Lead Bend MIL-STD-750, M-2036 Cond E Moisture Sensitivity Level Level 1, JEDEC-J-STD-020D T erminal Finish 100% Matte Tin-plated Body Material UL Recognized compound meeting flammability rating V-0 Lead Material Copper Alloy Design Considerations Careful selection of the correct component for the application’s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. SV6016Dx Dimensions — TO-252AA (D-Package) — D-PAK Surface Mount Dimension Inches Millimeters Min Typ Max Min Typ Max M O N HJ L K .118 .063 1.60 .071 1.80 .264 6.71 .264 6.71 .181 4.60 GATE Anode Cathode Anode TC MEASURING POINT G I D E A B C F 5.28 .208 5.34 .210 : 0.040 IN2AREA P Q
Revised: 04/17/20 ©2020 Littelfuse, Inc Specifications are subject to change without notice. Thyristors Y:Year Code M: Month Code L: Location Code DD: Calendar Code SJ6012V TO-251 (V/I-Pak) TO-252 (D-Pak) Part Numbering System Part Marking System SV 60 16 D COMPONENT TYPE SV: high temperature SCR VOLTAGE RATING CURRENT RATING 16: 16A PACKAGE TYPE PACKING TYPE TP TP: Tube Pack RP: Reel Pack 60: 600V D: TO-252 (D-Pak) x SENSITIVITY TYPE 1: 6mA SCR SV6016D1 SV6016Dx Packing Options Part Number Marking Weight Packing Mode Base Quantity SV6016D1TP SV6016D1 0.3 g Tube 750 (75 per tube) SV6016D1RP SV6016D1 0.3 g Tape & Reel 2500 0.512 (13.0) Arbor Hole Dia. XXXXXX XXXXXX XXXXXX DC XXXXXX Gate Cathode Anode 0.63 (16.0) 0.157 (4.0) 0.64 (16.3) 12.99 (330.0) 0.524 (13.3) 0.315 (8.0) 0.059 Dia(1.5) *Cover tape Direction of Feed Dimensions are in inches (and millimeters). DC DC TO-252 Embossed Carrier Reel Pack (RP) Specifications Meets all EIA-481-2 Standards Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.