STYN225 SIRECTIFIER | Alldatasheet

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STYN225(S) thru STYN1025(S) Discrete Thyristors(SCRs) Dim. A B C D E F G H J K M N Q R Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01

2.54 BSC

4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040

0.100 BSC

0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Dimensions TO-220AB ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tc = 100°C 25 A IT(AV) Average on-state current (180° conduction angle) Tc = 100°C 16 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C 314 A tp = 10 ms 300 I²tI ²t Value for fusing tp = 10 ms Tj = 25°C 450 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr £ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VRGM Maximum peak reverse gate voltage (for TN8 & TYN only) 5 V Dimensions TO-263(D2PAK) 1. Gate 2. Collector 3. Emitter 4. Collector Botton Side Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .315 .350 E 9.65 10.29 .380 .405 E1 6.22 8.13 .245 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.20 0 .008 R 0.46 0.74 .018 .029 A G A K A K G K G A

STYN225(S) thru STYN1025(S) Discrete Thyristors(SCRs) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ STANDARD THERMAL RESISTANCES Symbol Test Conditions TYNx08(S) Unit IGT VD = 12 V RL = 33 W MIN. 4 mA MAX. 40 VGT MAX. 1.3 V VGD VD = VDRM RL = 3.3 kW Tj = 125°C MIN. 0.2 V IH IT = 500 mA Gate open MAX. 50 mA IL IG = 1.2 IGT MAX. 90 mA dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 1000 V/µs VTM ITM = 16 A tp = 380 µs Tj = 25°C MAX. 1.6 V Vt0 Threshold voltage Tj = 125°C MAX. 0.77 V Rd Dynamic resistance Tj = 125°C MAX. 14 mW IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5 µA Tj = 125°C 4 mA Symbol Parameter Value Unit Rth(j-c) Junction to case (DC) 1.0 °C/W Rth(j-a) Junction to ambient (DC) TO-220AB 60 °C/W S = 1.0 cm² 45 S= copper surface under tab TO-263 PRODUCT SELECTOR Part Number Voltage (xxx) Sensitivity Package x25 40 mA TO-2 20AB 200~~1000 200~~1000 STYNx25S 40 mA TO-263 OTHER INFORMATION Note: x = voltage Part Number Marking Weight Base Quantity Packing mode 0.5 g 50 Tube S T Y Nx25 S T Y Nx25 2.3 g 250 B ulk STYN x25S S T Y N STYN x25S