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Thyristor Discretes (SCRs) A K G Dimensions TO-247AD Symbol Test Conditions Unit TVJ=TVJM TC=85oC; 180o sine 48 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 540 580 480 500 AITSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 1350 1300 1050 1030 A2s i2t (di/dt)cr 150 500 A/us (dv/dt)cr TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us PGM TVJ=TVJM tp=30us IT=ITAVM tp=300us 5 W PGAV 0.5 W ITRMS ITAVM oC TVJ TVJM Tstg -40...+140 140 -40...+125 Md Fc Mounting torque (M3) Mounting force with clip 20...120 Nm N Weight 6 g repetitive, IT=75A non repetitive, IT=ITAVM TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM I G=0.3A di G/dt=0.3A/us VRGM 10 V Maximum Ratings typical

6 L U H F W L I L H U

G A K K=Cathode, A=Anode, G=Cate STYN875 STYN1275 STYN1675 VRRM V 800 1200 1600 VRSM V 900 1300 1700 STYN1875 1800 1900 STYN1075 1000 1100 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

Symbol Test Conditions Characteristic Values Unit VVT IT=75A; T VJ=25oC 1.60 VTO For power-loss calculations only (TVJ=125oC) 0.80 V rT 11 m VD=6V; TVJ=25oC TVJ=-40oCVGT 1.5 1.6 V VD=6V; TVJ=25oC TVJ=-40oCIGT 100 200 mA VGD TVJ=TVJM; VD=2/3VDRM 0.2 V IGD 10 mA IH TVJ=25oC; VD=6V; RGK= 100 mA TVJ=25oC; tp=10us; IG=0.3A; diG/dt=0.3A/us 150 mAIL DC currentRthJC 0.60 K/W DC currentRthJH 0.80 K/W a Max. acceleration, 50 Hz 50 m/s2 IR, ID TVJ=TVJM; VR=VRRM; VD=VDRM 5 mA TVJ=25oC; VD=1/2VDRM I G=0.3A; diG/dt=0.3A/ustgd 2 us typ. Thyristor Discretes (SCRs) 0,01 0,1 1 200 250 300 350 400 450 0,5 1,0 1,5 2,0 100 ITSM [A] IT [A] 2 3 4 5 6 7 8 9101 100 1000 10000 I2t [A2s] VT [V] Fig. 1 Forward characteristics t [ms] Fig. 3 I2t versus time (1-10 ms) t [s] Fig. 2 Surge overload current TVJ = 25°C TVJ = 125°C TVJ = 45°C

50 Hz, 80% VRRM

TVJ = 125°C TVJ = 45°C VR = 0 V 125°C 150°C ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

Thyristor Discretes (SCRs) 100 101 102 103 104 0,0 0,1 0,2 0,3 0,4 ZthJC [K/W] dc = 0.5 0.4 0.33 0.17 0.08 0 25 50 100 125 150 IT(AV)M [A] TC [°C] Fig. 6 Max. forward current at case temperature t [ms] Fig. 8 Transient thermal impedance junction to case 0 20 40 IT(AV) [A] P(AV) [W] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature 0 50 100 150 Tamb [°C] dc = 0.5 0.4 0.33 0.17 0.08 10 100 1000 100 1000 1 10 100 1000 10000 0,1 VG [V] tgd [µs] typ. Limit TVJ = 125°C IG [mA] Fig. 4 Gate trigger characteristics IG [mA] Fig. 5 Gate controlled delay time 1: IGD, TVJ= 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C RthHA 0.6 0.8 2.0 4.0 8.0 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W Rthi [K/W] t i [s] 0.0 44 0.011 0.039 0.0001 0.047 0.02 0.09 0.4 0.18 0.12 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com