STYN208 SIRECTIFIER | Alldatasheet

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STYN208(S) thru STYN1008(S) Discrete Thyristors(SCRs) Dim. A B C D E F G H J K M N Q R Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01

2.54 BSC

4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040

0.100 BSC

0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Dimensions TO-220AB G A K A K G ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tc = 110°C 8 A IT(AV) Average on-state current (180° conduction angle) Tc = 110°C 5 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C 100 A tp = 10 ms 95 I²tI ²t Value for fusing tp = 10 ms Tj = 25°C 45 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr £ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VRGM Maximum peak reverse gate voltage (for TN8 & TYN only) 5 V Dimensions TO-263(D2PAK) 1. Gate 2. Collector 3. Emitter 4. Collector Botton Side Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .315 .350 E 9.65 10.29 .380 .405 E1 6.22 8.13 .245 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.20 0 .008 R 0.46 0.74 .018 .029 K A G

STYN208(S) thru STYN1008(S) Discrete Thyristors(SCRs) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ STANDARD THERMAL RESISTANCES Symbol Test Conditions STYNx08(S) Unit IGT VD = 12 V RL = 33 W MIN. 2 mA MAX. 15 VGT MAX. 1.3 V VGD VD = VDRM RL = 3.3 kW Tj = 125°C MIN. 0.2 V IH IT = 100 mA Gate open MAX. 30 mA IL IG = 1.2 IGT MAX. 70 mA dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 150 V/µs VTM ITM = 16 A tp = 380 µs Tj = 25°C MAX. 1.6 V Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V Rd Dynamic resistance Tj = 125°C MAX. 46 mW IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5 µA Tj = 125°C 2 mA Symbol Parameter Value Unit Rth(j-c) Junction to case (DC) 20 °C/W Rth(j-a) Junction to ambient (DC) TO-220AB 60 °C/W S = 0.5 cm² 70 S= copper surface under tab TO-263 PRODUCT SELECTOR Part Number Voltage (xxx) Sensitivity Package x08 15 mA TO-220AB 200~~1000 200~~1000 STYNx08S 15 mA TO-263 OTHER INFORMATION Note: x = voltage Part Number Marking Weight Base Quantity Packing mode 0.3 g 75 Tube S T Y N x08 S T Y N x08 2.3 g 250 B ulk STYN x08S S T Y N STYN x08S