STY50N105DK5 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 Max247 package information
- 5 Revision history
Features
Order code VDS RDS(on) max. ID PTOT STY50N105DK5 1050 V 0.120 Ω 46 A 625 W Fast-recovery body diode Best RDS(on) x area Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness
Applications
Switching applications
Description
This very high voltage N-channel Power MOSFET is part of the MDmesh™ DK5 fast recovery diode series. The MDmesh™ DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on) * area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters. Table 1: Device summary Order code Marking Packages Packaging STY50N105DK5 50N105DK5 Max247 Tube Max247 AM01475v1_noTab_noZen D(2) G(1) S(3)
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 46 A Drain current (continuous) at TC = 100 °C 30 A IDM (1) Drain current (pulsed) 184 A PTOT Total dissipation at TC = 25 °C 625 W dv/dt (2) Peak diode recovery voltage slope 50 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns Tj Operating junction temperature range -55 to 150 °C Tstg Storage temperature range Notes: (1)Pulse width limited by safe operating area (2)ISD ≤ 23 A, di/dt ≤ 400 A/μs; VDS peak ≤ V(BR)DSS, VDD = 525 V (3)VDS ≤ 840 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.2 °C/W Rthj-amb Thermal resistance junction-ambient 30 Table 4: Avalanche characteristics Symbol Parameter Value Unit IAS Single pulse avalanche energy (pulse width limited by TJMAX) 16 A EAS Single pulse avalanche energy (starting TJ = 25°C, ID = IAS, VDD = 50 V) 1550 mJ
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified) Table 5: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 V 1050 V IDSS Zero gate voltage drain current VDS = 1050 V, VGS = 0 V 1 µA VDS = 1050 V, VGS = 0 V, TC = 125 °C(1) 50 µA IGSS Gate-body leakage current VGS = ±20 V, VDS = 0 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 23 A 0.110 0.120 Ω Notes: (1)Defined by design, not subject to production test Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 6675 - pF Coss Output capacitance - 370 - pF Crss Reverse transfer capacitance - 10 - pF Co(tr)(1) Equivalent capacitance time related VGS = 0 V, VDS = 0 to 840 V - 630 - pF Co(er)(2) Equivalent capacitance energy related - 219 - RG Intrinsic gate resistance f = 1 MHz open drain - 3 - Ω Qg Total gate charge VDD = 840 V, ID = 46 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior") - 204 - nC Qgs Gate-source charge - 36 - nC Qgd Gate-drain charge - 133 - nC Notes: (1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. (2)Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS.
Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 525 V, ID = 23 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") - 40.6 - ns tr Rise time - 64.5 - ns td(off) Turn-off delay time - 262 - ns tf Fall time - 49.5 - ns Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 46 A ISDM Source-drain current (pulsed) 184 A VSD(1) Forward on voltage ISD = 46 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 46 A, VDD = 60 V, di/dt = 100 A/µs (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 273 ns Qrr Reverse recovery charge - 3 µC IRRM Reverse recovery current - 23 A trr Reverse recovery time ISD = 46 A, VDD = 60 V, di/dt = 100 A/µs, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 477 ns Qrr Reverse recovery charge - 10 µC IRRM Reverse recovery current - 42 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2.1 Electrical characteristics (curves)
Figure 2: Forward bias safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance d d t
Test circuits STY50N105DK5
3 Test circuits
Figure 14: Test circuit for resistive load switching times Figure 15: Test circuit for gate charge behavior Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 Max247 package information
Figure 20: Max247 package outline
Table 9: Max247 package mechanical data Dim. mm Min. Typ. Max. A 4.70 - 5.30 A1 2.20 - 2.60 b 1.00 - 1.40 b1 2.00 - 2.40 b2 3.00 - 3.40 c 0.40 - 0.80 D 19.70 - 20.30 e 5.35 - 5.55 E 15.30 - 15.90 L 14.20 - 15.20 L1 3.70 - 4.30
5 Revision history
Table 10: Document revision history Date Revision Changes 24-Jan-2013 1 First release 19-Dec-2016 2 Datasheet status promoted from preliminary to production data. Updated features, description and internal schematic diagram on cover page. Updated Section 1: "Electrical ratings" and Section 2: "Electrical characteristics". Minor text changes