STY30NA50 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA n TYPICAL RDS(on) = 0.15Ω n EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP n ± 30V GATE TO SOURCE VOLTAGE RATING n REPETITIVE AVALANCHE TESTED n LOW INTRINSIC CAPACITANCE n 100% AVALANCHE TESTED n GATE CHARGE MINIMIZED n REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

The Max247 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO-264. The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages.

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n SWITCH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) INTERNAL SCHEMATIC DIAGRAM TYPE V DSS R DS(on) ID STY30NA50 500 V < 0.175 Ω 30 A March 1996 Max247 TM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 500 V VDGR Drain- gate Voltage (RGS =2 0k Ω ) 500 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =2 5 oC3 0 A ID Drain Current (continuous) at Tc =1 0 0oC1 9 A IDM (•) Drain Current (pulsed) 120 A P tot Total Dissipation at Tc =2 5 oC 300 W Derating Factor 2.4 W/ oC Tstg Storage Temperature -55 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-Heatsink Typ with Conductive Grease 0.42 0.05 oC/W oC/W AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1 % ) 30 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =5 0V ) 3000 mJ E AR Repetitive Avalanche Energy (pulse width limited by Tj max, δ <1 % ) 180 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc =1 0 0oC, pulse width limited by Tj max, δ <1 % ) 19 A ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µAV GS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n gx0 . 8 Tc = 125 oC 200 1000 µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 30 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS =V GS ID =2 5 0µ A2 . 2 5 3 3 . 7 5 V R DS(on) Static Drain-source On Resistance V GS =1 0V I D =1 5A V GS =1 0V I D =1 5A T c =1 0 0oC 0.15 0.175 0.35 Ω Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on)max V GS =1 0V 30 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on)max ID =1 5A 2 5 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 6150 780 220 8000 1000 290 pF pF pF STY30NA50

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =2 5 0V I D =1 5A R G =4 . 7 Ω VGS =1 0V ns ns (di/dt)on Turn-on Current Slope V DD =4 0 0V I D =3 0A R G =4 7 Ω VGS =1 0V

240 A/ µ s

V DD =4 0 0V I D =3 0A V GS = 10 V 245 120 320 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =4 0 0V I D =3 0A R G =4 . 7 Ω V GS =1 0V 110 100 145 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 120 A A V SD (∗)F o r w a r d O n V o l t a g e ISD =3 0A V GS =0 1 . 6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =3 0A d i / d t=1 0 0A / µ s V DD =1 0 0V T j = 150 oC 800 17.6 ns µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area STY30NA50

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabilit y for the consequences of use of such information nor for any infringemen t of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectr onics. Specifications mention ed in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectr onics products are not authorized for use as critical compon ents in life supportdevices or systems withoutexpre ss written approval of SGS-THOMSON Microelectonics.  1995 SGS-THOMSON Microelectroni cs - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... STY30NA50