STY25NA60 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL 600V - 0.225Ω - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET n TYPICAL RDS(on) = 0.225Ω n EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP n ± 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n LOW INTRINSIC CAPACITANCE n GATE CHARGE MINIMIZED n REDUCED VOLTAGE SPREAD

DESCRIPTION

The Max247 package is a new high volume power package exibiting the same footprint as the industry standard TO-247, but designed to acco- modate much larger silicon chips, normally sup- plied in bigger packages such as TO-264.The in- creased die capacity makes the device idealto re- duce component count in multiple paralleled de- signs and save board space with respect to larger packages.

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n SWITCH MODE POWER SUPPLY (SMPS) n DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM March 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS =0 ) 6 0 0 V V DGR Drain- gate Voltage (RGS =2 0k Ω ) 600 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =2 5 oC2 5 A ID Drain Current (continuous) at Tc = 100 oC 16.5 A IDM (•) Drain Current (pulsed) 100 A P tot Total Dissipation at Tc =2 5 oC3 0 0 W Derating Factor 2.4 W/ o C Tstg Storage Temperature -55 to 150 o C Tj Max. Operating Junction Temperature 150 o C (•) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STY25NA60 600 V < 0.24 Ω 25 A 2 3 Max247 

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-Heatsink Typ with Conductive Grease 0.42 0.05 oC/W oC/W oC/W AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 25 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =5 0V ) 3000 mJ ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS =0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS = Max Rating T c =1 2 5oC 500 µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 30 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS =V GS ID = 250 µ A 345V R DS(on) Static Drain-source On Resistance V GS =1 0V I D = 12.5 A 0.225 0.24 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on )max V GS =1 0V 25 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on )max ID = 12.5 A 20 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 6200 690 195 pF pF pF STY25NA60

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on delay Time Rise Time V DD = 300 V I D = 12.5 A R G =4 . 7 Ω V GS =1 0V (see test circuit, figure 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V ID =2 5A V GS =1 0V 2 4 0 115 315 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 480 V I D =2 5A R G =4 . 7 Ω V GS =1 0V (see test circuit, figure 5) 105 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 100 A A V SD (∗) Forward On Voltage I SD =2 5A V GS =0 2 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =2 5A d i / d t=1 0 0A / µ s V DD = 100 V T j =1 5 0o C (see test circuit, figure 5) 840 19.5 46.5 ns µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STY25NA60

Gate Charge vs Gate-sourceVoltage Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STY25NA60

Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STY25NA60

Fig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 2:Unclamped Inductive Waveform Fig. 4:Gate Charge test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times STY25NA60

DIM. mm inch A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 P025Q Max247 MECHANICAL DATA STY25NA60

Information furnished is believed to be accurate and reliable. However, STMicroelect ronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com STY25NA60