STW12NA50 STMICROELECTRONICS | Alldatasheet

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N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR n TYPICAL RDS(on) = 0.5Ω n ± 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 oC n LOW INTRINSIC CAPACITANCES n GATE GHARGE MINIMIZED n REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the most advanced high voltage technology. The op- timized cell layout coupled with a new proprietary edge termination concur to give the device low R DS(on) and gate charge, unequalled ruggedness and superior switching performance.

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n SWITCH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM TYPE V DSS R DS(on) ID STW12NA50 500 V < 0.6 Ω 11.6 A TO-247 December 1995 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 500 V V DG R Drain- gate Voltage (RGS =2 0k Ω ) 500 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =2 5 oC1 1 . 6 A ID Drain Current (continuous) at Tc =1 0 0oC7 . 3 A IDM (•) Drain Current (pulsed) 46.4 A P tot Total Dissipation at Tc =2 5 oC 170 W Derating Factor 1.36 W/ oC Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.73 0.1 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1 % ) 11.6 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =5 0V ) 670 mJ E AR Repetitive Avalanche Energy (pulse width limited by Tj max, δ <1 % ) 26.5 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj max, δ <1 % ) 7.3 A ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =2 5 0µAV GS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS = Max Rating x 0.8 Tc =1 2 5oC 250 µA µA IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 30 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS (th) Gate Threshold Voltage VDS =V GS ID =2 5 0µ A 2.25 3 3.75 V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID =6A 0 . 5 0 . 6 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on)max V GS =1 0V 12 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on)max ID =6A 6 9 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 1750 250 2500 370 130 pF pF pF STW12NA50

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =2 5 0V I D =6A R G =4 . 7 Ω V GS =1 0V (see test circuit, figure 3) ns ns (di/dt)on Turn-on Current Slope V DD =4 0 0V I D =1 2A R G =4 7 Ω VGS =1 0V (see test circuit, figure 5)

190 A/ µs

V DD = 400 V ID =1 2A V GS =1 0V 8 0 110 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =4 0 0V I D =1 2A R G =4 . 7 Ω V GS =1 0V (see test circuit, figure 5) ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 11.6 46.4 A A V SD (∗) Forward On Voltage I SD =1 2A V GS =0 1 . 6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 12 A di/dt = 100 A/µs V DD = 100 V T j =1 5 0oC (see test circuit, figure 5) 600 10.2 ns µC A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas Thermal Impedance STW12NA50

Static Drain-source On Resistance Output Characteristics Transconductance Gate Charge vs Gate-source Voltage STW12NA50

Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Cross-over TimeTurn-off Drain-source Voltage Slope STW12NA50

Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1:Unclamped Inductive Load Test CircuitsFig. 2:Unclamped Inductive Waveforms STW12NA50

Fig. 4:Gate Charge Test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 3:Switching Times Test Circuits For Resistive Load STW12NA50

DIM. mm inch A 4.7 5.3 0.185 0.208 A1 2.87 0.113 A2 1.5 2.5 0.059 0.098 b 1 1.4 0.039 0.055 b1 2.25 0.088 b2 3.05 3.43 0.120 0.135 C 0.4 0.8 0.015 0.031 D 20.4 21.18 0.803 0.833 e 5.43 5.47 0.213 0.215 E 15.3 15.95 0.602 0.628 L 15.57 0.613 L1 3.7 4.3 0.145 0.169 Q 5.3 5.84 0.208 0.230 ØP 3.5 3.71 0.137 0.146 D Q ø A C E e bb2 L TO-247 MECHANICAL DATA STW12NA50

Information furnished is believed to be accur ate and reliable. However, SGS-THOMSON Microelectronics assumes no respon sability for the consequ ences of use of such information nor for any infringem ent of paten ts or other rights of third parties which may results from its use. No license is grante d by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelec tronics. Specifications mentioned in this publication are subject to chan ge without notice. This publicat ion superse des and replaces all information previou sly supplie d. SGS-THOMSON Microelec tronics produ cts are not autho rized for use as critical compone nts in lifesupport devices or system s without expres s written approval of SGS-THOMSON Microelectonics.  1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserve d SGS-THOMSONMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malays ia - Malta - Morocco - The Netherlands - Singap ore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdo m - U.S.A STW12NA50