STW12N170K5 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 14

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-247 package information

Features

Order code VDS RDS(on) max. ID PTOT STW12N170K5 1700 V 2.9 Ω 5 A 250 W

  • Industry’s lowest R DS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STW12N170K5 Product summary Order code STW12N170K5 Marking 12N170K5 Package TO-247 Packing Tube N-channel 1700 V, 2.3 Ω typ., 5 A, MDmesh™ K5 Power MOSFET in a TO‑247 package STW12N170K5 Datasheet DS12847 - Rev 1 - November 2018 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width limited by safe operating area
  2. I SD ≤ 5 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS

Table 2. Thermal data Table 3. Avalanche characteristics

  1. Pulse width limited by T Jmax

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified) Table 4. Static

  1. Defined by design, not subject to production test.

Table 5. Dynamic

  1. This parameter is defined as a constant equivalent capacitance giving the same charging time as C OSS when VDS increases
  2. This parameter is defined as a constant equivalent capacitance giving the same stored energy as C OSS when VDS

increases from 0 to 80% VDSS. Table 6. Switching times Figure 19. Switching time

Electrical characteristics

Table 7. Source drain diode

  1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Table 8. Gate-source Zener diode The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. additional external componentry.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance

Figure 13. Output capacitance stored energy

3 Test circuits

Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior Figure 16. Test circuit for inductive load switching and Figure 17. Unclamped inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. STW12N170K5

Package information

4.1 TO-247 package information

Figure 20. TO-247 package outline

Table 9. TO-247 package mechanical data

Revision history

Table 10. Document revision history 20-Nov-2018 1 First release.