STH12N120K5-2 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 21
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 H²PAK-2 package information
- 4.2 TO-220 type A package information
- 4.3 TO-247 package information
- 4.4 TO-247 long leads package information
- 5 Revision history
Features
Order codes VDS RDS(on) max. ID PTOT STH12N120K5-2 1200 V 0.69 Ω 12 A 250 W STP12N120K5 STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected
Applications
Switching applications
Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STH12N120K5-2 12N120K5 H2PAK-2 Tape and reel STP12N120K5 TO-220 Tube STW12N120K5 TO-247 STWA12N120K5 TO-247 long leads H 2PAK-2 TO-220 TO-247 TO-247 long leads D(2, TAB) G(1) S(3) ( TO-220, TO-247 and TO-247 long leads) (H PAK-2) D(TAB) G(1) S(2, 3)
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Electrical ratings
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 30 V ID Drain current at TC = 25 °C 12 A ID Drain current at TC = 100 °C 7.6 A IDM (1) Drain current (pulsed) 48 A PTOT Total dissipation at TC = 25 °C 250 W IAR (2) Max current during repetitive or single pulse avalanche 4 A EAS (3) Single pulse avalanche energy 215 mJ dv/dt (4) Peak diode recovery voltage slope 4.5 V/ns dv/dt (5) MOSFET dv/dt ruggedness 50 V/ns Tj Tstg Operating junction temperature Storage temperature - 55 to 150 °C Notes: (1)Pulse width limited by safe operating area. (2)Pulse width limited by TJmax. (3)Starting TJ = 25 °C, ID=IAS, VDD= 50 V (4)ISD ≤ 12 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS (5)VDS ≤ 960 V Table 3: Thermal data Symbol Parameter Value Unit H2PAK-2 TO-220 TO-247 TO-247 long leads Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-amb Thermal resistance junction-amb max 62.5 50 °C/W Rthj-pcb Thermal resistance junction-pcb max 30 °C/W
STW12N120K5, STWA12N120K5
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified) Table 4: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 1200 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 1200 V 1 µA VGS = 0, VDS = 1200 V, Tc = 125 °C 50 µA IGSS Gate body leakage current VDS = 0 V, VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID= 6 A 0.62 0.69 Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0 V, VDS = 100 V, f = 1 MHz - 1370 - pF Coss Output capacitance - 110 - pF Crss Reverse transfer capacitance - 0.6 - pF Co(tr) (1) Equivalent capacitance, time-related VGS = 0, VDS = 0 to 960 V - 128 - pF Co(er) (2) Equivalent capacitance, energy-related - 42 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 3 - Ω Qg Total gate charge VDD = 960 V, ID = 12 A VGS = 10 V (see Figure 18: "Gate charge test circuit" ) - 44.2 - nC Qgs Gate-source charge - 7.3 - nC Qgd Gate-drain charge - 30 - nC Notes: (1)Time-related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS (2)Energy-related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5
Electrical characteristics
Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 600 V, ID = 6 A, RG = 4.7 Ω, VGS = 10 V (see Figure 20: "Unclamped inductive load test circuit") - 23 - ns tr Rise time - 11 - ns td(off) Turn-off delay time - 68.5 - ns tf Fall time - 18.5 - ns Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 12 A ISDM Source-drain current (pulsed) 48 A VSD (1) Forward on voltage ISD = 12 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 12 A, VDD = 60 V di/dt = 100 A/µs, (see Figure 19: "Test circuit for inductive load switching and diode recovery times") - 630 ns Qrr Reverse recovery charge - 12.6 µC IRRM Reverse recovery current - 40 A trr Reverse recovery time ISD = 12 A,VDD = 60 V di/dt = 100 A/µs, Tj = 150 °C (see Figure 19: "Test circuit for inductive load switching and diode recovery times") - 892 ns Qrr Reverse recovery charge - 15.6 µC IRRM Reverse recovery current - 35 A Notes: (1)Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 8: Gate-source Zener diode Symbol Parameter Test conditions Min Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ±1 mA, ID = 0 A 30 - V The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost - effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components.
STW12N120K5, STWA12N120K5
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area for H2PAK-2 and TO-220 Figure 3: Thermal impedance for H2PAK-2 and TO-220 Figure 4: Safe operating area for TO-247 and TO-247 long leads Figure 5: Thermal impedance for TO-247 and TO-247 long leads Figure 6: Output characteristics Figure 7: Transfer characteristics ID 0.1 0.1 1 VDS(V)10 (A) Operation in this area isLimited by max R DS(on) 10µs 1ms 100µs 0.01 Tj=150°C Tc=25°C Single pulse 10ms 100 1000 GIPD300320150945MT K tp Ƭ Zth= K*Rthj-c δ= tp/Ƭ Single pulse 0.01 δ=0.5 10-1 10-2 10-410-5 10-3 10-2 10-1 tP(s) 0.2 0.1 0.05 0.02 ID 0.1 0.1 1 VDS(V)10 (A) Operation in this area isLimited by max R DS(on) 10µs 1ms 100µs 0.01 Tj=150°C Tc=25°C Single pulse 10ms 100 1000 GIPD300320151033MT K tp Ƭ Zth= K*R thj-c δ= t p/ƬSingle pulse 0.01 δ=0.5 10 -1 10 -2 10 -3 10 -410 -5 10 -3 10 -2 10 -1 0.2 0.1 0.05 0.02 tp (s) GC18460 ID 0 5 VDS(V)10 (A) VGS=9, 10V 20 8V GIPD300320151056MT ID 5 7 VGS(V)9 (A) 6 8 VDS=20V GIPD300320151057MT
STW12N120K5, STWA12N120K5 Figure 14: Normalized V(BR)DSS vs temperature Figure 15: Source-drain diode forward characteristics Figure 16: Maximum avalanche energy vs starting TJ V(BR)DSS -75 TJ(°C) (norm) -25 7525 125 0.84 0.92 1.08 ID=1mA GIPD300320151249MT VSD
4 ISD(A)
(V) 2 106 8 0.5 0.6 0.7 0.8 TJ=-50°C TJ=150°C TJ=25°C 0.9 GIPD300320151251MT EAS -75 25 TJ(°C) (mJ) -25 75 125 100 150
200 ID=12 A
VDD=50 V GIPD300320151255MT
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Test circuits
3 Test circuits
Figure 17: Switching times test circuit for resistive load Figure 18: Gate charge test circuit Figure 19: Test circuit for inductive load switching and diode recovery times Figure 20: Unclamped inductive load test circuit Figure 21: Unclamped inductive waveform Figure 22: Switching time waveform AM01469v1 VDD 47 kΩ 1 kΩ 47 kΩ 2.7 kΩ 1 kΩ 12 V Vi ≤ VGS 2200 μF PW I G = CONST 100 Ω 100 nF D.U.T. VG AM01470v1 A D D.U.T. S B G A A B B RG G FAST DIODE D S L=100 µH µF 3.3 1000 µF VDDΩ D.U.T. V(BR)DSS VDDVDD VD IDM ID AM01472v1 AM01473v10 VGS 90% VDS ton 90% 10% 90% 10% td(on) tr t td(off) tf 10% off
STW12N120K5, STWA12N120K5
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5
Package information
4.1 H²PAK-2 package information
Figure 23: H²PAK-2 package outline 8159712_D
STW12N120K5, STWA12N120K5 Table 9: H²PAK-2 mechanical data Dim. mm Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8°
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Figure 24: H²PAK-2 recommended footprint 8159712_D
STW12N120K5, STWA12N120K5
4.2 TO-220 type A package information
Figure 25: TO-220 type A package outline
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Table 10: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95
STW12N120K5, STWA12N120K5
4.3 TO-247 package information
Figure 26: TO-247 package outline
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Table 11: TO-247 mechanical data Dim. mm. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70
STW12N120K5, STWA12N120K5
4.4 TO-247 long leads package information
Figure 27: TO-247 long leads package outline
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Table 12: TO-247 long leads mechanical data Dim. mm. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 3.25 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 4.30 P 3.50 3.60 3.70 Q 5.60 6.00 S 6.05 6.15 6.25
STW12N120K5, STWA12N120K5
5 Revision history
Table 13: Document revision history Date Revision Changes 23-Aug-2011 1 First release. 17-Jan-2013 2 Minor text changes Added: H2PAK package The part number STB12N120K5 has been moved to a separate datasheet Updated: Updated: mechanical data for TO-247 package 16-May-2014 3 The part numbers STFW12N120K5 has been moved to a separate datasheet Added: TO-247 long leads package Modified: IAR, EAS, dv/dt values in Table 2: "Absolute maximum ratings" Modified: the entire typical values in Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Source drain diode" Added: Section 2.1: "Electrical characteristics (curves)" Minor text changes 08-Apr-2015 4 Updated title, silhouette and description in cover page. Updated Table 4: "On/off states", Table 5: "Dynamic", Figure 9: "Static drain-source on-resistance" and Figure 10: "Capacitance variations". Minor text change.