STW10NB60 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL 600V - 0.69Ω - 10A - TO-247 PowerMESH  MOSFET n TYPICAL RDS(on) = 0.69Ω n EXTREMELY HIGH dv/dt CAPABILITY n 100% AVALANCHE TESTED n VERY LOW INTRINSIC CAPACITANCES n GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS

n SWITCH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE n HIGH CURRENT, HIGH SPEED SWITCHING INTERNAL SCHEMATIC DIAGRAM October 1998 1 2 3 TO-247 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 600 V V DGR Drain- gate Voltage (RGS =2 0k Ω ) 600 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =2 5 oC1 0 A ID Drain Current (continuous) at Tc =1 0 0oC6 . 2 A IDM (•) Drain Current (pulsed) 40 A P tot Total Dissipation at Tc =2 5 oC 160 W Derating Factor 1.28 W/ o C dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C (•) Pulse width limited by safe operating area ( 1)ISD ≤10A, di/dt≤ 200 A/µs, VDD ≤ V(BR)DSS ,T j≤ TJMAX TYPE V DSS R DS(on) ID STW10NB60 600 V < 0.8 Ω 10 A

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.78 0.1 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1 % ) 10 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =5 0V ) 850 mJ ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n g T c =1 0 0oC µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 30 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS =V GS ID = 250 µ A 345V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID =4 A 0.69 0.8 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on )max V GS =1 0V 10 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on )max ID =1 7A 3 6 . 5 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 1480 210 1924 273 pF pF pF STW10NB60

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =3 0 0V I D = 4.5 A R G =4 . 7 Ω V GS =1 0V (see test circuit, figure 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V I D =9 A V GS =1 0V R G =4 . 7 Ω V GS =1 0V 10.5 17.5 56 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =4 8 0V I D =9A R G =4 . 7 Ω VGS =1 0V (see test circuit, figure 5) ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗)F o r w a r d O n V o l t a g e ISD =1 0A V GS =0 1 . 6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =9A d i / d t=1 0 0A /µ s V DD = 100 V T j =1 5 0oC (see test circuit, figure 5) 600 5.4 ns µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STW10NB60

Gate Charge vs Gate-sourceVoltage Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STW10NB60

Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STW10NB60

Fig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 2:Unclamped Inductive Waveform Fig. 4:Gate Charge test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times STW10NB60

DIM. mm inch A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P TO-247 MECHANICAL DATA STW10NB60

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com STW10NB60