STV160NF02LT4

STV160NF02LT4 STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET™ II POWER MOSFET (1) Starting Tj=25°C , ID =8 0 A ,VDD =2 0 V (**)Limited only maximum junction temperature allowed by PowerSO-10 I TYPICAL R DS (on) = 0.0016Ω I LOW THRESHOLD DRIVE I ULTRA LOW ON-RESISTANCE I ULTRA FAST SWITCHING I 100% AVALANCHE TESTED I VERY LOW GATE CHARGE I LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGE

DESCRIPTION

The STV160NF02L represents the second gener- ation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also trans- lates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial

APPLICATIONS

PERFORMANCE TELECOM AND VRMs DC- DC CONVERTERS ABSOLUTE MAXIMUM RATINGS (G ) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STV160NF02L 20 V < 0.0025 Ω 160 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0 ) 20 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 20 V VGS Gate- source Voltage ± 15 V ID (**) Drain Current (continuos) at TC =2 5 ° C 160 A ID Drain Current (continuos) at TC = 100°C 113 A IDM (/circle6 ) Drain Current (pulsed) 640 A PTOT Total Dissipation at TC = 25°C 210 W Derating Factor 1.4 W/°C EAS (1) Single Pulse Avalanche Energy 1.5 J Tstg Storage Temperature –65 to 175 °C Tj Max. Operating Junction Temperature 175 °C PowerSO-10 INTERNAL SCHEMATIC DIAGRAM CONNECTION DIAGRAM (TOP VIEW) Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) STV160NF02L THERMAL DATA ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC Rthj-case Thermal Resistance Junction-case Max 0.71 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 50 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS =0 2 0 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS =M a xR a t i n g 1µ A VDS =M a xR a t i n g ,TC = 125°C 10 µA IGSS Gate-body Leakage Current (VDS =0 ) VGS =±1 5V ± 1 0 0 n A Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250µA 1V R DS(on) Static Drain-source On Resistance VGS =1 0V ,ID =8 0A VGS =1 0V ,ID =4 5A VGS =1 0V ,ID =2 0A VGS =8V ,ID =8 0A VGS =5V ,ID =4 0A VGS =1 0V ,ID =80 A;Tj=1 7 5°C VGS =8V ,ID =80 A; Tj=1 7 5°C VGS =5V ,ID =40 A; Tj=1 7 5°C 1.35 1.6 1.56 1.7 3.5 2.5 2.5 2.5 3.5 5.7 11.4 m Ω m Ω m Ω m Ω m Ω m Ω m Ω m Ω I D(on) On State Drain Current V DS >ID(on)xR DS(on)max, VGS =1 0 V 160 A Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS >ID(on)xR DS(on)max, ID = 80A 210 S R g Gate resistance VDS =0V ,f=1M H z ,VGS =0 0.5 Ω C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =1 5V ,f=1M H z ,VGS =0 4800 3000 680 pF pF pF C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =0V ,f=1M H z ,VGS =0 7000 12300 4200 pF pF pF LS Internal Source Inductance From the Lead End (6mm from Package Body) to the Die Center 4n H LD Internal Drain Inductance Not Available on Surface Mounting Package Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) STV160NF02L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD =1 0V ,ID =8 0A R G =4 . 7Ω VGS =1 0 V (see test circuit, Figure 3) 28 ns tr Rise Time 800 ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =1 6V ,ID =1 6 0A , VGS =1 0V 115 160 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD =1 0V ,ID =8 0A , R G =4 . 7Ω, VGS =1 0V (see test circuit, Figure 5) 240 ns ns td(off) tr(Voff) tf tc Turn-off Delay Time Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 16 V, ID =4 0A R G =4 . 7Ω, VGS = 10V 140 200 ns ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 160 A ISDM (1) Source-drain Current (pulsed) 640 A VSD (2) F o r w a r dO nV o l t a g eISD =1 6 0A ,VGS =0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =8 0A ,d i / d t=1 0 0 A / µ s , VDD =1 5 V ,Tj=2 5°C (see test circuit, Figure 5) 225 ns nC A Safe Operating Area Thermal Impedance Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) STV160NF02L Gate Charge vs Gate-source Voltage Capacitance Variations Output Characteristics Tranconductance Tranfer Characteristics Static Drain-Source On Resistance Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) STV160NF02L Basic Schematic For Motherboard VRM Whith Synchronous Rectification Basic Schematic Mosfets Switch Used In Secondary Side Of a Froward Convert Source-drain Diode Forward Characteristics Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp. Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) STV160NF02L Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) STV160NF02L DIM. mm inch A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 C 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 e 1.27 0.050 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 0.240 F 1.25 1.35 0.049 0.053 h 0.50 0.002 H 13.80 14.40 0.543 0.567 L 1.20 1.80 0.047 0.071 q 1.70 0.067 α 0 o 8o DETAIL "A" PLANE SEATING α L F h A D D1= = = = = = 0.10 A E1E3 C Q A = = B B DETAIL "A" SEATING PLANE = = = = 610 e B HE M0.25 = = = = 0068039-C PowerSO-10 MECHANICAL DATA Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) STV160NF02L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com Obsolete Product(s) - Obsolete Product(s)