STV10NA40

STV10NA40 STMICROELECTRONICS | Alldatasheet

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Technical content

MICROELECTRONICS STV10NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR = TYPICAL Rosjon) = 0.46 Q = £30V GATE TO SOURCE VOLTAGE RATING o> = 100% AVALANCHE TESTED oo ‘ me > = REPETITIVE AVALANCHE DATA AT 100°C. Oe = LOWINTRINSIC CAPACITANCES We AY » GATE GHARGE MINIMIZED ny = REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the Power SO-10 most advanced high voltage technology. The op- timized cell layout coupled with a new proprietary edge termination concur to give the device low > Roscon) and gate charge, unequalled ruggedness and superior switching performance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS (TAB) = HIGH CURRENT, HIGH SPEED SWITCHING =» SWITCH MODE POWER SUPPLIES (SMPS) = DC-AC CONVERTERS FOR WELDING ° EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE (+10) S (145) ABSOLUTE MAXIMUM RATINGS Symbol Parameter _ Value _ ‘Unit. [Vos [Drain-source Vonage (Vas) ———~dYSSSCS~—SOSSSCSC~*rC [Voor [Drain- gate Vonage (Ras =20K0) «|S OSSSCSC~idC CS [Ves [Gate-source Votage SSC [to [Drain Curent (continuous) aTe=25° [St SSSC~d CA [to [Drain Curent (coninwous) atTo= 100° [sa —S~=~wCCS [Pio Tota Dissipation at Te= 25°C SS*dSSSSC*dC WFC | (*) Pulse width limited by safe operating area May 1994 16 mm 7929237 0073654 eT

Rin-case |Thermal Resistance Junction-case Max °ciw Rithj-amb |Thermal Resistance Junction-ambient ($) Max °CIW T Maximum Temperature For Soldering Purpose °C (5) When mounted using minimum recommended pad size on FA-4 board AVALANCHE CHARACTERISTICS Avalanche Current, Repetitive or Not-Repetitive 10 (pulse width limited by T; max, 5 < 1%) Single Pulse Avalanche Energy md (starting T, = 25°C, Ip = Ian, Voo = 50 V) Repetitive Avalanche Energy md (pulse width limited by T, max, 8 < 1%) lan Avalanche Current, Repetitive or Not-Repetitive (Te = 100 °C, pulse width limited by Tj max, 8 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified) OFF [‘Symbor | Parameter | Test Gonditions | Win. | Typ. | Max | Unit | \\eryoss |Drain-source Ip= 250A Vas=0 Vv Breakdown Voltage Zero Gate Voltage Vos = Max Rating 250 Drain Current (Vas = 0) |Vps = Max Rating x 0.8 To = 125°C 1000 Gate-body Leakage Ves = +30 V nA Current (Vos = 0) ON (*) [Symbor | Parameter | Test Conditions | win. | Typ. [ Wax. | Unit] [_Vesen [Gate Threshowd Votage Vos=Vos_lo= 250A [2s] a [ams] v | Ros(on) |Static Drain-source On |Vas=10V Ip=5A Resistance Ves=10V Ipb=5A Te = 100°C On State Drain Current | Vos > Ipjon) X Roscon)max A \\Vas= 10 V DYNAMIC [Symbot [Parameter | Test Conditions | win. | Typ. | wax. | Uni | Qis (*) | Forward Vos > Ip(on) X Ros(onymax Ip =5A 7.2 Transconductance Ciss Input Capacitance Vos=25V f=1MHz Ves=0 1180 | 1600 pF Coss |Output Capacitance 200 260 pF Css | Reverse Transfer 55 75 pF Capacitance S34 wicromicTnceics me 7929237 0073655 135 a

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions [ min. | Typ. | Max. | Unit | ‘ta(on) Turn-on Time Voo=200V In=5A t |Rise Time Re=472 Ves = 10 V (see test circuit, figure 3) (di/dt)on |Turn-on Current Slope |Vpo= 320 V In=10A Aus Re= 472 Ves = 10 V (see test circuit, figure 5) Q, | Total Gate Charge Voo = 320V In=10A Vas=10V 54 75 nc Qgs. |Gate-Source Charge 8 nc Qga Gate-Drain Charge 27 nc SWITCHING OFF [‘Symbo | _Paremoter_| Test Conditions | Win. | Typ. | Max. | Unit | trvot) |Off-voltage Rise Time |Vpp=320V Ip=10A t Fall Time Ro=479 Vas=10V te Cross-over Time (see test circuit, figure 5) SOURCE DRAIN DIODE | Symbot | Parameter | Test Conditions [_ min. | typ. | Max. | Unit | Source-drain Current 10 Source-drain Current | 40 (pulsed) | |_vso(*) [Forward Onvottage [Iso=10A Vaso | | te |v | Reverse Recovery |Iso =10A_ di/dt = 100 Aus 470 ns Time Voo = 100 VT, = 150 °C Reverse Recovery (see test circuit, figure 5) 6.5 pC Charge Reverse Recovery 27.5 A Current (*) Pulsed: Pulse duration = 300 ys, duty cycle 1.5% (+) Pulse width limited by safe operating area Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms L Vienyoss Vp —= Yo 2200 13.3 BF “uF Yoo Tow Ip 7\\ | b+” Yoo “ i Yoo — eB % Ou.. c \\ LI Le--- 8 Pa ‘se07000 sone SYM imichomscTromics @® 7929237 0073b5b 075

Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge Test Circuit Resistive Load oY oD 100nF Ry 2200 | 3.3 BF ur Yoo — Yo vi=20¥=Veuxr ‘MST 009 pwr. JL fe Dw. °~T 2200 i O = , W I A 4mKo —e SL go oa i 1KQ _ Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times «A “A Oh 0 wos ‘ DIODE a FAST. L=10quH g uu 33 | 1000 230 > ae Mid c OU.T. + Re 3 < sn 46 $GS-THOMSON es 0 @ 7929237 0073657 TOl

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