STD2N80K5 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Packaging information
  • 6 Revision history

Features

  • TO-220 worldwide best RDS(on)
  • Worldwide best FOM (figure of merit)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. D(2, TAB) G(1) S(3) AM01476v1 TO-220 TAB DPAK TAB TO-220FP TAB IPAK Order codes V DS RDS(on)max I D PTOT STD2N80K5 800 V 4.5 Ω 2 A 45 W STF2N80K5 20 W STP2N80K5 45 W STU2N80K5 Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. For TO-220FP limited by maximum junction temperature.
  2. Pulse width limited by safe operating area.
  3. I SD ≤ 2 A, di/dt ≤ 100 A/μs, peak VDS ≤ V(BR)DSS

Table 3. Thermal data

  1. When mounted on FR-4 board of 1 inch², 2 oz Cu.

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified). Table 4. On/off states Table 5. Dynamic

  1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when
  2. Energy related is defined as a constant equival ent capacitance giving the same stored energy as Coss

voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. Table 6. Switching times Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Table 8. Gate-source Zener diode

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for DPAK and Figure 3. Thermal impedance for DPAK and Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220

Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance Figure 12. Capacitance variations Figure 13. Output capacitance stored energy

0 VDS(V)

Figure 14. Normalized gate threshold voltage vs Figure 15. Normalized on-resistance vs Figure 16. Normalized VDS vs temperature Figure 17. Source-drain diode forward

2.5 VGS=10 V

Figure 18. Maximum avalanche energy vs

3 Test circuits

Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Figure 25. DPAK (TO-252) type A drawing

Table 9. DPAK (TO-252) type A mechanical data

Figure 26. DPAK (TO-252) type A footprint (a)

Figure 27. TO-220FP drawing

Table 10. TO-220FP mechanical data

Figure 28. TO-220 drawing

Table 11. TO-220 mechanical data

Figure 29. IPAK (TO-251) drawing

Table 12. IPAK (TO-251) mechanical data

5 Packaging information

Figure 30. Tape for DPAK

Figure 31. Reel for DPAK Table 13. DPAK tape and reel mechanical data

6 Revision history

Table 14. Document revision history 11-Jul-2013 1 First release.