STD2N105K5 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 21
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package mechanical data
- 4.1 DPAK, STD2N105K5
- 4.2 TO-220, STP2N105K5
- 4.3 IPAK, STU2N105K5
- 5 Packaging mechanical data
- 6 Revision history
Features
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 7$% AM01476v1 TO-220 TAB TAB DPAK IPAK TAB Order codes V DS RDS(on) max I D PTOT STD2N105K5 1050 V 8 Ω 1.5 A 60 WSTP2N105K5 STU2N105K5 Table 1. Device summary
1 Electrical ratings
Table 2. Absolute maximum ratings
- Pulse width limited by safe operating area.
Table 3. Thermal data
2 Electrical characteristics
Table 4. On /off states Table 5. Dynamic
- Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when
- energy related is defined as a constant equival ent capacitance giving the same stored energy as Coss
Zener diodes thus avoid the usage of external components. Table 6. Switching times Table 7. Source drain diode
- Pulse width limited by safe operating area
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK and Figure 3. Thermal impedance for DPAK and Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 Figure 6. Output characteristics Figure 7. Transfer characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance Figure 10. Capacitance variations Figure 11. Output capacitance stored energy Figure 12. Normalized gate threshold voltage vs Figure 13. Normalized on-resistance vs
01 I D(A)2
3 Test circuits
Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 DPAK, STD2N105K5
Figure 23. DPAK (TO-252) type A drawing
Table 9. DPAK (TO-252) type A mechanical data
Figure 24. DPAK (TO-252) type A footprint (a)
4.2 TO-220, STP2N105K5
Figure 25. TO-220 type A drawing
Table 10. TO-220 type A mechanical data
4.3 IPAK, STU2N105K5
Figure 26. IPAK (TO-251) drawing
Table 11. IPAK (TO-251) type A mechanical data
5 Packaging mechanical data
Figure 27. Tape
Figure 28. Reel Table 12. DPAK (TO-252) tape and reel mechanical data
6 Revision history
Table 13. Document revision history 08-May-2014 1 First release. Document status promoted from preliminary to production data. Updated title, features and description in cover page. DPAK, STD2N105K5 and Section 4.3: IPAK, STU2N105K5.