STD2N105K5 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 21

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 4.1 DPAK, STD2N105K5
  • 4.2 TO-220, STP2N105K5
  • 4.3 IPAK, STU2N105K5
  • 5 Packaging mechanical data
  • 6 Revision history

Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 7$% AM01476v1 TO-220 TAB TAB DPAK IPAK TAB Order codes V DS RDS(on) max I D PTOT STD2N105K5 1050 V 8 Ω 1.5 A 60 WSTP2N105K5 STU2N105K5 Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Pulse width limited by safe operating area.

Table 3. Thermal data

2 Electrical characteristics

Table 4. On /off states Table 5. Dynamic

  1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when
  2. energy related is defined as a constant equival ent capacitance giving the same stored energy as Coss

Zener diodes thus avoid the usage of external components. Table 6. Switching times Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 8. Gate-source Zener diode

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for DPAK and Figure 3. Thermal impedance for DPAK and Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 Figure 6. Output characteristics Figure 7. Transfer characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance Figure 10. Capacitance variations Figure 11. Output capacitance stored energy Figure 12. Normalized gate threshold voltage vs Figure 13. Normalized on-resistance vs

01 I D(A)2

3 Test circuits

Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 DPAK, STD2N105K5

Figure 23. DPAK (TO-252) type A drawing

Table 9. DPAK (TO-252) type A mechanical data

Figure 24. DPAK (TO-252) type A footprint (a)

4.2 TO-220, STP2N105K5

Figure 25. TO-220 type A drawing

Table 10. TO-220 type A mechanical data

4.3 IPAK, STU2N105K5

Figure 26. IPAK (TO-251) drawing

Table 11. IPAK (TO-251) type A mechanical data

5 Packaging mechanical data

Figure 27. Tape

Figure 28. Reel Table 12. DPAK (TO-252) tape and reel mechanical data

6 Revision history

Table 13. Document revision history 08-May-2014 1 First release. Document status promoted from preliminary to production data. Updated title, features and description in cover page. DPAK, STD2N105K5 and Section 4.3: IPAK, STU2N105K5.