STP16N60M2 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 16

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 4.1 TO-220 type A package information
  • 4.2 IPAK (TO-251) Type A package information
  • 5 Revision history

Features

Order code VDS RDS(on) max. ID STP16N60M2 600 V 0.32 Ω 12 A STU16N60M2

  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STP16N60M2 16N60M2 TO-220 Tube STU16N60M2 IPAK 321 TAB IPAK 1 2 3 TAB TO-220 AM15572v1_tab D(2, TAB) G(1) S(3)

1 Electrical ratings

Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 12 A ID Drain current (continuous) at TC= 100 °C 7.6 A IDM (1) Drain current (pulsed) 48 A PTOT Total dissipation at TC = 25 °C 110 W dv/dt(2) Peak diode recovery voltage slope 15 V/ns dv/dt(3). MOSFET dv/dt ruggedness 50 V/ns Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 °C Notes: (1) Pulse width limited by safe operating area. (2) ISD ≤ 12 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS. (3) VDS ≤ 480 V Table 3: Thermal data Symbol Parameter Value Unit TO-220 IPAK Rthj-case Thermal resistance junction-case max. 1.14 °C/W Rthj-amb Thermal resistance junction-ambient max. 62.5 100 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 2.9 A EAS Single pulse avalanche energy (starting T j = 25 °C, ID = IAR, VDD = 50 V) 130 mJ

2 Electrical characteristics

(TC = 25 °C unless otherwise specified). Table 5: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C 100 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 6 A 0.28 0.32 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS= 100 V, f = 1 MHz, VGS = 0 V - 700 - pF Coss Output capacitance - 38 - pF Crss Reverse transfer capacitance - 1.2 - pF Coss eq. (1) Equivalent output capacitance VDS = 0 V to 480 V, VGS = 0 V - 140 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5.3 - Ω Qg Total gate charge VDD = 480 V, ID = 12 A, VGS = 10 V (see Figure 17: "Gate charge test circuit") - 19 - nC Qgs Gate-source charge - 3.3 - nC Qgd Gate-drain charge - 9.5 - nC Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 6 A RG = 4.7 Ω, VGS = 10 V (see Figure 16: "Switching times test circuit for resistive load" and Figure 21: "Switching time waveform") - 10.5 - ns tr Rise time - 9.5 - ns td(off) Turn-off-delay time - 58 - ns tf Fall time - 18.5 - ns

Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 12 A ISDM (1) Source-drain current (pulsed) 48 A VSD (2) Forward on voltage VGS = 0 V, ISD = 12 A - 1.6 V trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 316 ns Qrr Reverse recovery charge - 3.25 µC IRRM Reverse recovery current - 20.5 A trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 454 ns Qrr Reverse recovery charge - 4.8 µC IRRM Reverse recovery current - 21 A Notes: (1)Pulse width is limited by safe operating area. (2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 2: TO-220 safe operating area Figure 3: TO-220 thermal impedance Figure 4: IPAK safe operating area Figure 5: IPAK thermal impedance Figure 6: Output characteristics Figure 7: Transfer characteristics CG20930 tp Zth = k Rthj-C δ = tp / Ƭ 10-2 10-1 K Ƭ δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.01 δ = 0.02 δ = 0.05 SINGLE PULSE Zth = k Rthj-C δ = tp / Ƭ tp Ƭ GC20460 K Tp(s)10210-310-410-5 101 10-2 10-1 100 δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.01 SINGLE PULSE δ = 0.02 δ = 0.05 tp Ƭ Zth = KRthj-c δ = tp / Ƭ

STP16N60M2, STU16N60M2 Test circuits

3 Test circuits

Figure 16: Switching times test circuit for resistive load Figure 17: Gate charge test circuit Figure 18: Test circuit for inductive load switching and diode recovery times Figure 19: Unclamped inductive load test circuit Figure 20: Unclamped inductive waveform Figure 21: Switching time waveform AM01469v1 VDD 47 kΩ 1 kΩ 47 kΩ 2.7 kΩ 1 kΩ 12 V Vi ≤ VGS 2200 μF PW I G = CONST 100 Ω 100 nF D.U.T. VG AM01470v1 A D D.U.T. S B G A A B B RG G FAST DIODE D S L=100 µH µF 3.3 1000 µF VDDΩ D.U.T. V(B R)DS S VDDVDD VD IDM ID AM01472v1 AM01473v10 VGS 90% VDS ton 90% 10% 90% 10% td(on) tr t td(off) tf 10% off

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 TO-220 type A package information

Figure 22: TO-220 type A package outline

Table 9: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95

4.2 IPAK (TO-251) Type A package information

Figure 23: IPAK (TO-251) type A drawing

Table 10: IPAK (TO-251) type A mechanical data Dim. mm Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 0.95 b4 5.20 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 0.80 1.00 10°

5 Revision history

Table 11: Document revision history Date Revision Changes 11-Mar-2015 1 Initial release.