STU14NA50 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA ■ TYPICAL RDS(on) = 0.31 Ω ■ EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ REPETITIVE AVALANCHE TESTED ■ LOW INTRINSIC CAPACITANCE ■ 100% AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

The Max220 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) INTERNAL SCHEMATIC DIAGRAM TYPE V DSS R DS(on) ID STU14NA50 500 V < 0.36 Ω 14 A October 1997 123 Max220 TM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 500 V VDGR Drain- gate Voltage (RGS = 20 kΩ ) 500 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC1 4 A ID Drain Current (continuous) at Tc = 100 oC 8.8 A IDM (•) Drain Current (pulsed) 56 A P tot Total Dissipation at Tc = 25 oC 160 W Derating Factor 1.28 W/ oC Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.78 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 14 A E AS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR , VDD = 50 V) 980 mJ EAR Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) 39 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj max, δ < 1%) 8.8 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS = 0) V DS = Max Rating V DS = Max Rating x 0.8 Tc = 100 oC µ A µ A IGSS Gate-body Leakage Current (VDS = 0) V GS = ± 30 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS = VGS ID = 250 µ A 2.25 3 3.75 V R DS(on) Static Drain-source On Resistance V GS = 10V ID = 7A V GS = 10V ID = 7A Tc = 100oC 0.31 0.36 0.72 Ω Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max V GS = 10 V 14 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance V DS > ID(on) x RDS(on)max ID = 7 A 8.5 11 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz VGS = 0 2750 380 105 3600 500 140 pF pF pF STU14NA50

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD = 250 V ID = 7 A R G = 4.7 Ω VGS = 10 V ns ns (di/dt)on Turn-on Current Slope V DD = 400 V ID = 14 A R G = 47 Ω VGS = 10 V

160 A/ µ s

V DD = 400 V ID = 14 A VGS = 10 V 115 150 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 400 V ID = 14 A R G = 4.7 Ω VGS = 10 V 105 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗) Forward On Voltage I SD = 14 A VGS = 0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 14 A di/dt = 100 A/µ s V DD = 100 V Tj = 150 oC 650 12.3 ns µ C A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area STU14NA50

DIM. mm inch A 4.3 4.6 0.169 0.181 A1 2.2 2.4 0.087 0.094 A2 2.9 3.1 0.114 0.122 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.18 0.023 D 15.9 16.3 0.626 0.641 D1 9 9.35 0.354 0.368 D2 0.8 1.2 0.031 0.047 D3 2.8 3.2 0.110 0.126 e 2.44 2.64 0.096 0.104 E 10.05 10.35 0.396 0.407 L 13.2 13.6 0.520 0.535 L1 3 3.4 0.118 0.133 A C D3 D1D2 D b E L e P011R Max220 MECHANICAL DATA STU14NA50

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . . . STU14NA50