STD11N65M5 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Packaging mechanical data
  • 6 Revision history

Features

■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested

Applications

■ Switching applications

Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited by maximum junction temperature.

Table 3. Thermal data

  1. When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On /off states Table 6. Dynamic

  1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when
  2. Energy related is defined as a constant equival ent capacitance giving the same stored energy as C oss

Table 7. Switching times Table 8. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for DPAK and Figure 3. Thermal impedance DPAK and IPAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-220 and Figure 7. Thermal impedance for TO-220 and

Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance Figure 12. Capacitance variations Figure 13. Output capacitance stored energy

0 VDS(V)

3 Test circuits

Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Table 9. D²PAK (TO-263) mechanical data

Table 10. DPAK (TO-252) mechanical data

Table 11. TO-220FP mechanical data

Figure 29. TO-220FP drawing

Table 12. TO-220 type A mechanical data

Figure 30. TO-220 type A drawing

Table 13. IPAK (TO-251) mechanical data

Figure 31. IPAK (TO-251) drawing

5 Packaging mechanical data

Table 14. DPAK (TO-252) tape and reel mechanical data

Table 15. D²PAK (TO-263) tape and reel mechanical data

6 Revision history

Table 16. Document revision history 23-Feb-2012 1 First release.