STB10N60M2 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Packaging mechanical data
  • 6 Revision history

Features

  • Extremely low gate charge
  • Lower RDS(on) x area vs previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Q g. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. AM15572v1 , TAB TO-220 TAB TAB DPAK TAB IPAK TAB D PAK2 Order codes V DS @ TJmax RDS(on) max ID STB10N60M2 650 V 0.600 Ω 7.5 A STD10N60M2 STP10N60M2 STU10N60M2 Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings Table 3. Thermal data

  1. When mounted on 1 inch² FR-4, 2 Oz copper board

Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On /off states Table 6. Dynamic

  1. C oss eq. is defined as a constant equivalent capac itance giving the same charging time as C oss when VDS

Table 7. Switching times

Table 8. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for DPAK and Figure 3. Thermal impedance for DPAK and Figure 4. Safe operating area for D2PAK and Figure 5. Thermal impedance for D2PAK and Figure 6. Output characteristics Figure 7. Transfer characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage Figure 12. Normalized on-resistance vs Figure 13. Source-drain diode forward

0 Qg(nC)

2 ID(A)

Figure 14. Normalized VDS vs temperature Figure 15. Output capacitance stored energy

0 VDS(V)

3 Test circuits

Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Table 9. D²PAK (TO-263) mechanical data

Table 10. DPAK (TO-252) type A mechanical data

Figure 24. DPAK (TO-252) type A drawing

Figure 25. DPAK (TO-252) type A footprint (b)

Table 11. TO-220 type A mechanical data

Figure 26. TO-220 type A drawing

Table 12. IPAK (TO-251) mechanical data

Figure 27. IPAK (TO-251) drawing

5 Packaging mechanical data

Table 13. D²PAK (TO-263) tape and reel mechanical data

Table 14. DPAK (TO-252) tape and reel mechanical data

6 Revision history

Table 15. Document revision history 29-May-2013 1 First release.