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Thyristor-Thyristor Modules STT165GK;;B Type STT165GK08B STT165GK12B STT165GK14B STT165GK16B STT165GK18B STT165GK20B STT165GK22B V RRM VDRM V 800 1200 1400 1600 1800 2000 2200 V RSM VDSM V 900 1300 1500 1700 1900 2100 2300 Dimensions in mm (1mm=0.0394") Symbol Test Conditions Maximum Ratings Unit TVJ=TVJM TC=85oC; 180o sine 300 165 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 6000 6400 5250 5600 AI TSM, IFSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 180000 170000 137000 128000 A 2s i2dt (di/dt)cr 150 500 A/us (dv/dt)cr TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us PGM TVJ=TVJM tp=30us IT=ITAVM tp=500us 120 60 W PGAV 8 W ITRMS, IFRMS ITAVM, IFAVM oC TVJ TVJM Tstg -40...+125 125 -40...+125 VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 3000 3600 V~ Md Mounting torque (M6) Terminal connection torque (M6) 2.25-2.75/20-25 4.5-5.5/40-48 Nm/lb.in. Weight 173 g TVJ=TVJM repetitive, IT=500A f=50Hz, tp=200us VD=2/3VDRM IG=0.5A non repetitive, IT=ITAVM diG/dt=0.5A/us VRGM 10 V Typical ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

Thyristor-Thyristor Modules STT165GK;;B Symbol Test Conditions Characteristic Values Unit VVT, VF IT, IF=300A; TVJ=25oC 1.36 VTO For power-loss calculations only (TVJ=TVJM) 0.8 V rT 1.6 m VD=6V; TVJ=25oC TVJ=-40oCVGT 2.6 V VD=6V; TVJ=25oC TVJ=-40oCIGT 150 200 mA VGD TVJ=TVJM; VD=2/3VDRM 0.25 V IGD 10 mA IH TVJ=25oC; VD=6V; RGK= 150 mA TVJ=25oC; tp=30us; VD=6V IG=0.45A; diG/dt=0.45A/us 200 mAIL per thyristor/diode; DC current per moduleRthJC 0.155

0.0775 K/W

per thyristor/diode; DC current per moduleRthJK 0.225

0.1125 K/W

dS Creeping distance on surface 12.7 mm dA Creepage distance in air 9.6 mm a Maximum allowable acceleration 50 m/s2 IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM 40 mA TVJ=25oC; VD=1/2VDRM IG=0.5A; diG/dt=0.5A/ustgd 2 us TVJ=TVJM; IT=160A; tp=200us; -di/dt=10A/us typ. VR=100V; dv/dt=20V/us; VD=2/3VDRMtq 150 us uCQS TVJ=TVJM; IT, IF=300A; -di/dt=50A/us 550 IRM 235 A ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits

APPLICATIONS

  • Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches TVJ=TVJM; VD=2/3VDRM

FEATURES

  • International standard package * Glass passivated chips * Isolation voltage 3600 V~ * UL file NO.E310749 * RoHS compliant * Copper base plate ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

W A Fig.1L Power dissipation per thyristor vs. on-state current PTAV W 100 100 Fig.1R Power dissipation per thyristor vs. ambienttemp Ta C O 150 K/W Rth(j-a) Pvtot IRMS 100 W A Fig.2L Power dissipation per module vs. rms current 100 0 50 W 100 Fig.2R Power dissipation per module vs. case temp Ta C O C O 150 K/W Rth(c- a) Pvtot 2 STT165B.

2 STD165B

W A Fig.3L Power dissipation of two modules vs. direct current 100ID 0 50 W 100 Fig.3 R Power dissipation of two modules vs. case temp Ta Tc C O C O 150 K/WPvtot Rth(c-a) R 200 100 100 150 1/2 .STT165B 1/2 .STD165B rec. 120 sin. 180 rec. 180cont. 300 400 200 200 300

1 STT165B

1 STD165B

. Tc 100 200 300 400 200 300 200 200 500 400 500 125 116 107 1000 400 L 1000 125 116 107 0.08 300 300 2.5 1.6 1.2 0.8 0.7 0.6 0.5 0.45 0.8 0.5 0.6 0.4 0.3 0.25 0.2 0.17 200 400 600 800 1200 200 400 600 800 1200 71 0.5 0.4 0.3 0.25 0.2 0.16 0.12 0.1 0.06 0.07 0.04 0.020.05 0.03 Thyristor-Thyristor Modules STT165GK;;B ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

STT.

3 STD165B

W A Fig.4L Power dissipation of three modules vs. direct and rms current 500 ID 0 50 W 100 Fig.4R Power dissipation of three modules vs. case temp Ta Tc C O C O 150 K/W 500 STT B. STD B.

10 A/us

Fig.5 Recovered chargevs. current decrease 100 1/2uC Tvj= C o 0.001 0.01 K/W 100 Fig.6 Transient thermal impedance vs. time t Zth STT B STD B. Zth(j-s) Zth(j-c) 0.1 1 10 s STT B. STD165 165 100 200 Fig.7 On-state charactristics A IT Vt 0.5 1 1.5 2V typ. max. Fig.8 Surge overload current vs. time ITM= 1 t 10 100 ms 1000 0.4 0.6 0.8 1.2 1.4 1.6 IT(OV) ITSM STT B STD165 165 1 VRRM. 0.5 VRRM. 0 VRRM. ITSM(25 C) =5400A O ITSM(125 C)=5000A O 125 165 165 100 1000 10000 Qrr 1 -di /dtT 165 165 300 Tvj=25 C O Tvj=125 C O 400 1500 1500 125 115 105 0.06 0.05 0.1 0.15 0.2 0.25 0.3 400 500 600 500 0.3 0.2 0.25 0.16 0.12 0.1 0.08 0.07 0.05 0.04 0.03 0.02 Rth(c-a) A20 A50 A100 A200 A500 Thyristor-Thyristor Modules STT165GK;;B ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com