STT130 SIRECTIFIER | Alldatasheet

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Thyristor-Thyristor Modules Type STT130GK08 STT130GK12 STT130GK14 STT130GK16 STT130GK18 VRRM VDRM V 800 1200 1400 1600 1800 VRSM VDSM V 900 1300 1500 1700 1900 Dimensions in mm (1mm=0.0394") Symbol Test Conditions Maximum Ratings Unit TVJ=TVJM TC=85oC; 180o sine 300 130 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 5500 5850 4800 5100 AITSM, IFSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 151000 142000 115000 108000 A2s i2dt (di/dt)cr 150 500 A/us (dv/dt)cr TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us PGM TVJ=TVJM tp=30us IT=ITAVM tp=500us 120 60 W PGAV 8 W ITRMS, IFRMS ITAVM, IFAVM oC TVJ TVJM Tstg -40...+125 125 -40...+125 VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 3000 3600 V~ Md Mounting torque (M6) Terminal connection torque (M6) 2.25-2.75/20-25 4.5-5.5/40-48 Nm/lb.in. Weight 125 g TVJ=TVJM repetitive, IT=500A f=50Hz, tp=200us VD=2/3VDRM IG=0.5A non repetitive, IT=500A diG/dt=0.5A/us VRGM 10 V Typical including screws

Thyristor-Thyristor Modules Symbol Test Conditions Characteristic Values Unit VVT, VF IT, IF=300A; TVJ=25oC 1.36 VTO For power-loss calculations only (TVJ=125oC) 0.8 V rT 1.5 m VD=6V; TVJ=25oC TVJ=-40oCVGT 2.5 2.6 V VD=6V; TVJ=25oC TVJ=-40oCIGT 150 200 mA VGD TVJ=TVJM; VD=2/3VDRM 0.2 V IGD 10 mA IH TVJ=25oC; VD=6V; RGK= 200 mA TVJ=25oC; tp=30us; VD=6V IG=0.5A; diG/dt=0.5A/us 300 mAIL per thyristor/diode; DC current per moduleRthJC 0.23

0.115 K/W

per thyristor/diode; DC current per moduleRthJK 0.33

0.165 K/W

dS Creeping distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM 10 mA TVJ=25oC; VD=1/2VDRM IG=0.5A; diG/dt=0.5A/ustgd 2 us TVJ=TVJM; IT=160A; tp=200us; -di/dt=10A/us typ. VR=100V; dv/dt=20V/us; VD=2/3VDRMtq 150 us uCQS TVJ=TVJM; IT, IF=300A; -di/dt=50A/us 550 IRM 235 A

FEATURES

  • International standard package * Planar passivated chips * Isolation voltage 3600 V~ ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits

APPLICATIONS

  • Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches * Copper base plate

Thyristor-Thyristor Modules Fig. 2 i2t versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration s t ms t 0.001 0.01 0.1 1 1000 2000 3000 4000 11 0 104 105 106 A2s ITSM A i2t TVJ = 45°C TVJ = 125°C 80 % VRRM TVJ = 45°C 50 Hz TVJ = 125°C Fig. 4 Gate trigger characteristics Fig. 6 Gate trigger delay time 3 x STT130

Thyristor-Thyristor Modules Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJC for various conduction angles d: d RthJC (K/W) DC 0.230 180oC 0.244 120oC 0.255 60oC 0.283 30oC 0.321 Constants for ZthJC calculation: iR thi (K/W) ti (s) 1 0.0095 0.001 2 0.0175 0.065 3 0.203 0.4 RthJK for various conduction angles d: d RthJK (K/W) DC 0.330 180oC 0.344 120oC 0.355 60oC 0.383 30oC 0.421 Constants for ZthJK calculation: iR thi (K/W) ti (s) 1 0.0095 0.001 2 0.0175 0.065 3 0.203 0.4 4 0.1 1.29 3 x STT130