STT13005 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 10
Technical content
Features
■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed
Applications
■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low power converters
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Figure 1. Internal schematic diagram Table 1. Device summary
1 Electrical ratings
Table 2. Absolute maximum ratings Table 3. Thermal data
2 Electrical characteristics
Tcase = 25 °C unless otherwise specified. Table 4. Electrical characteristics
- Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain (V CE = 1 V) Figure 5. DC current gain (V CE = 5 V) Figure 6. Collector-emitter saturation Figure 7. Base-emitter saturation
2.2 Test circuits
Figure 13. Resistive load switching test circuit Figure 14. Inductive load switching test circuit
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4 Revision history
Table 5. Document revision history