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Thyristor-Thyristor Modules STT116GKXXB Type STT116GK08B STT116GK12B STT116GK14B STT116GK16B STT116GK18B VRRM VDRM V 800 1200 1400 1600 1800 VRSM VDSM V 900 1300 1500 1700 1900 Dimensions in mm (1mm=0.0394") Symbol Test Conditions Maximum Ratings Unit TVJ=TVJM TC=85oC; 180o sine 180 116 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 2250 2400 2000 2150 AITSM, IFSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 25300 23900 20000 19100 A2s i2dt (di/dt)cr 150 500 A/us (dv/dt)cr TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us PGM TVJ=TVJM tp=30us IT=ITAVM tp=300us 5 W PGAV 0.5 W ITRMS, IFRMS ITAVM, IFAVM oC TVJ TVJM Tstg -40...+125 125 -40...+125 VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 3000 3600 V~ Md Mounting torque (M5) Terminal connection torque (M5) 2.5-4.0/22-35 2.5-4.0/22-35 Nm/lb.in. Weight 110 g TVJ=TVJM repetitive, IT=250A f=50Hz, tp=200us VD=2/3VDRM IG=0.45A non repetitive, IT=ITAVM diG/dt=0.45A/us VRGM 10 V Typical ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com
Thyristor-Thyristor Modules STT116GKXXB Symbol Test Conditions Characteristic Values Unit VVTM ITM=330A; TVJ=25oC 1.50 VTO For power-loss calculations only (TVJ=125oC) 0.8 V rT 2.4 m VD=6V; TVJ=25oC TVJ=-40oCVGT 2.5 2.6 V VD=6V; TVJ=25oC TVJ=-40oCIGT 150 200 mA VGD TVJ=TVJM; VD=2/3VDRM 0.2 V IGD 10 mA IH TVJ=25oC; VD=6V; RGK= 200 mA TVJ=25oC; tp=10us; VD=6V IG=0.45A; diG/dt=0.45A/us 450 mAIL per thyristor/diode; DC current per moduleRthJC 0.270
0.135 K/W
per thyristor/diode; DC current per moduleRthJK 0.470
0.235 K/W
dS Creeping distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM 5 mA TVJ=25oC; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/ustgd 2 us TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us typ. VR=100V; dv/dt=20V/us; VD=2/3VDRMtq 185 us uCQS TVJ=TVJM; IT, IF=50A; -di/dt=6A/us 170 IRM 45 A ADVANTAGES * Space and weight savings * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits
APPLICATIONS
- DC motor control * Softstart AC motor controller * Light, heat and temperature control
FEATURES
- International standard package * Glass passivated chips * Isolation voltage 3600 V~ * UL file NO.E310749 * RoHS compliant * Copper base plate ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com
Thyristor-Thyristor Modules STT116GKXXB PTAV ITAV 25 50 W A s Fig.1L Power dissipation per thyristor vs. on-state current PTAV W 100 100 Fig.1R Power dissipation per thyristor vs. ambient temp Ta C O 150 K/W Rth(j-a) Pvtot IRMS 100 50 150 W A Fig.2L Power dissipation per module vs. rms current 100 0 0 50 W 100 Fig.2R Power dissipation per module vs. case temp Ta C O C O 150 K/W Rth(c-a) Pvtot 2 STT116B. 2 STD116B. Pvtot 50 150 W A Fig.3L Power dissipation of two modules vs. direct current 100ID 0 50 W 100 Fig.3 R Power dissipation of two modules vs. case temp Ta Tc C O C O 150 K/W Pvtot Rth(c-a) R L 200 150 100 75 100 125 150 1/2 .STT116B 1/2 .STD116B rec. 120 sin. 180 rec. 180 cont. 150 200 2.5 1.6 1.4 1.2 1.1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 300 400 200 200 250 300
1 STT116B
1 STD116B.. 130 123 115 108 100 Tc 100 200 300 400 1.5 0.8 0.7 0.6 0.5 0.4 0.35 0.3 0.25 0.2 0.17 0.13 0.1 200 250 300 250 500 750 250 500 750 130 119 108 0.6 0.5 0.4 0.3 0.25 0.2 0.18 0.16 0.14 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com
STT B.
3 STD116
W A Fig.4L Power dissipation of three modules vs. direct and rms current 500 ID 0 50 W 100 Fig.4R Power dissipation of three modules vs. case temp Ta Tc C O C O 150 K/W 500 STT B. STD B.
10 A/us
Fig.5 Recovered charge vs. current decrease 100 1/2uC Tvj= C o 0.001 0.01 K/W 100 Fig.6 Transient thermal impedance vs. time t Zth STT STD B. . Zth(j-s) Zth(j-c) 0.1 1 10 s 0.4 STT C. STD116 116B 100 200 Fig.7 On-state charactristics A IT Vt 0.5 1 1.5 2V typ. max. Fig.8 Surge overload current vs. time ITM= 1 t 10 100 ms 1000 0.4 0.6 0.8 1.2 1.4 1.6 IT(OV) ITSM STT C STD116 116B 1 VRRM. 0.5 VRRM. 0 VRRM. ITSM(25 C) =2250A O ITSM(130 C)=1900A O Thyristor-Thyristor Modules STT116GKXXB 250 750 300 1000 250 750 1000 130 119 109 77Rth(c a)- 0.7 0.5 0.4 0.3 0.24 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 130 116 116 100 1000 10000 Qrr 1 -di /dtT A20 A50 A100 A200 A500 116B 116 0.1 0.2 0.3 0.5 0.6 300 Tvj=25 C O__ Tvj=125 C O - - ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com