STS123 AUK | Alldatasheet
Document overview
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Technical content
Features
- Low saturation medium current application
- Extremely low collector saturation voltage
- Suitable for low voltage large current drivers
- High DC current gain and large current capability
- Low on resistance : RON=0.6Ω (Max.) (IB=1mA)
Ordering Information
Ty p e N O. Ma r ki n g Pa cka g e C od e STS123 STS123 TO-92 O u t l i n e D i m e n s i o n s u n i t : mm SSeemmiiccoonndduuccttoorr 4.5±0.1 4.5±0.1 0.4±0.02 1.27 Typ. 2.54 Typ. 1 2 3 3.45±0.1 2.25±0.1 2.06±0.1 1.20±0.1 0.38 14.0±0.40 PIN Connections 1. Emitter 2. Base 3. Collector
Characteristic Symbol Ratings Unit Collector-Base voltage V CBO 20 V Collector-Emitter voltage V CEO 15 V Emitter-base voltage V EBO 6.5 V Collector current I C 1A Collector dissipation P C 625 mW Junction temperature T j 150 °C Storage temperature T stg -55~150 °C
Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-base breakdown voltage BV CBO IC=50µA, IE=0 20 - - V Collector-Emitter breakdown voltage BV CEO IC=1mA, IB=0 15 - - V Emitter-base breakdown voltage BV EBO IE=50µA, IC=0 6.5 - - V Collector cut-off current I CBO VCB=20V, IE=0 - - 0.1 µA Emitter cut-off current I EBO VEB=6V, IC=0 - - 0.1 µA DC current gain h FE VCE=1V, IC=100mA 150 - - - Collector-Emitter saturation voltage V CE(sat) IC=500mA, IB=50mA - 0.1 0.3 V Transistor frequency f T VCE=5V, IC=50mA - 260 - MHz Collector output capacitance C ob VCB=10V, IE=0, f=1MHz - 5 - pF On resistance R ON f=1KHz, IB=1mA, VIN=0.3V - 0.6 - Ω
Electrical Characteristic Curves Fig. 4 R ON-IB Fig. 3 h FE-IC Fig. 1 C Ob-VCB Fig. 1 V CE(sat)-IC