STS11NF30L STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 30V - 0.009Ω - 11A SO-8 LOW GATE CHARGE STripFET  POWER MOSFET PRELIMINARY DATA n TYPICAL RDS(on) = 0.014Ω @5 V n TYPICAL Qg = 19 nC @ 4.5V n OPTIMAL R DS(on)xQ g TRADE-OFF n CONDUCTION LOSSES REDUCED n SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power Mosfet is the third generation of STMicroelectronics unique ”Single Feature Size ” strip-based process. The resul- ting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high effi- ciency are of paramount importance.

APPLICATIONS

n SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCs INTERNAL SCHEMATIC DIAGRAM April 2000 SO-8 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS =0 ) 3 0 V V DGR Drain- gate Voltage (RGS =2 0k Ω )3 0 V V GS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25oC Drain Current (continuous) at Tc =1 0 0oC A A IDM (•) Drain Current (pulsed) 44 A P tot Total Dissipation at Tc =2 5 oC 2.5 W (•) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STS11NF30L 30 V < 0.012 Ω 11 A

(*)Thermal Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature 150 -65 to 150 oC/W oC oC (*) Mounted on FR-4 board (t≤ 10sec) ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS =0 3 0 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n g T c =1 2 5oC µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS =V GS ID = 250 µ A1 V R DS(on) Static Drain-source On Resistance V GS =1 0V I D =5 . 5A V GS =5V I D =5 . 5A 0.009 0.014 0.012 0.0185 Ω Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on )max V GS =1 0V 11 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on )max ID =5 . 5A 2 0 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 V 1650 800 170 pF pF pF STS11NF30L

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time V DD =1 5V I D =5 . 5A R G =4 . 7 Ω V GS =4 . 5V (Resistive Load, see fig.3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =2 4V I D =1 1A V GS =4 . 5V 1 9 24 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time V DD =2 4V I D =5 . 5A R G =4 . 7 Ω VGS =4 . 5V (Resistive Load, see fig.3) ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗)F o r w a r d O n V o l t a g e ISD =1 1A V GS =0 1 . 5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 11 A di/dt = 100 A/µ s V r =1 5V T j = 150 oC (Resistive Load, see fig.5) 105 2.4 ns nC A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area STS11NF30L

Fig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 2:Unclamped Inductive Waveform Fig. 4:Gate Charge test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times STS11NF30L

DIM. mm inch A 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M 0.6 0.023 S 8 (max.) 0016023 SO-8 MECHANICAL DATA STS11NF30L

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com STS11NF30L