STS10DN3LH5 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package mechanical data
- 5 Revision history
Features
Type V DSS RDS(on) max I D STS10DN3LH5 30 V 0.021 Ω 10 A SO-8 Table 1. Device summary
1 Electrical ratings
Table 2. Absolute maximum ratings
- Pulse width limited by safe operating area
Table 3. Thermal resistance
2 Electrical characteristics
Table 4. Static Table 5. Dynamic
Table 6. Switching on/off (resistive load) Table 7. Source drain diode
- Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BV DSS vs temperature Figure 7. Static drain-source on resistance
3 Test circuits
Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
Figure 19. Gate charge waveform
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
DIM. mm. inch A 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M 0.6 0.023 S 8 (max.) SO-8 MECHANICAL DATA
5 Revision history
Table 8. Document revision history