STS01DTP06 STMICROELECTRONICS | Alldatasheet

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Table 1: General Features n HIGH GAIN n LOW VCE(sat) n SIMPLIFIED CIRCUIT DESIGN n REDUCED COMPONENT COUNT APPLICATION n PUSH-PULL OR TOTEM-POLE CONFIGURATION n MOSFET AND IGBT GATE DRIVING n MOTOR, RELAY AND SOLENOID DRIVING

DESCRIPTION

The STS01DTP06 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar technology. The STS01DTP06 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs driver. Figure 1: Package Figure 2: Internal Schematic Diagram Table 2: Order Codes VCE(sat) hFE IC

0.35 V > 100 1A

Part Number Marking Package Packaging STS01DTP06T4 S01DTP06 SO-8 Tape & Reel STS01DTP06 DUAL NPN-PNP COMPLEMENTARY BIPOLAR TRANSISTOR PRELIMINARY DATA Rev. 1

Table 3: Absolute Maximum Ratings For PNP type voltage and current values are negative. Table 4: Thermal Data (1) When mounted on 1 inch square pad of 2 oz. copper, t ≤10 sec Table 5: Q1-NPN Transistor Electrical Characteristics (Tcase = 25 oC unless otherwise specified) * Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %. Symbol Parameter NPN PNP Unit VCBO Collector-Base Voltage (IE = 0) 60 -60 V VCEO Collector-Emitter Voltage (IB = 0) 30 -30 V VEBO Emitter-Base Voltage (IC= 0) 5- 5 V IC Collector Current 3- 3 A ICM Collector Peak Current (tp < 5ms) 6- 6 A IB Base Current 1- 1 A IBM Base Peak Current (tp < 1ms) 2- 2 A Ptot Total Dissipation at TC = 25 oC single 2W Ptot Total Dissipation at TC = 25 oC couple 1.6 W Tstg Storage Temperature -65 to 150 °C TJ Max. Operating Junction Temperature 150 °C Symbol Parameter Unit Rthj-amb (1) Thermal Resistance Junction-ambient Max (Single Operation) 62.5 oC/W Rthj-amb (1) Thermal Resistance Junction-ambient Max (Dual Operation) 78 oC/W Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 60 V 0.1 µA ICEO Collector Cut-off Current (IB = 0) VCE = 30 V 1 µA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 1 µA V(BR)CEO * Collector-Emitter Breakdown Voltage (IB = 0) IC = 10 mA 30 V VCE(sat) * Collector-Emitter Saturation Voltage IC = 1 A IB = 10 mA IC = 2 A IB = 100 mA 0.35 1 0.7 V V VBE(sat) * Base-Emitter Saturation Voltage IC = 1 A IB = 10 mA 0.85 1.1 V hFE * DC Current Gain I C = 1 A VCE = 2 V IC = 3 A VCE = 2 V 100

Table 7: Revision History Version Release Date Change Designator 22-Apr-2005 1 First Release.

DIM. mm. inch A 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M 0.6 0.023 S 8 (max.) SO-8 MECHANICAL DATA

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