STR-A6061MZ

STR-A6000MZ SANKEN | Alldatasheet

Document overview

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Technical content

Datasheet sections

• 3.1 Derating Curves ---------------------------------------------------------------
• 3.2 MOSFET Safe Operating Area Curves ----------------------------------
• 3.3 Ambient Temperature versus Power Dissipation Curve -------------
• 3.4 Transient Thermal Resistance Curves -----------------------------------
• 9.1 Startup Operation -----------------------------------------------------------
• 9.2 Undervoltage Lockout (UVLO) -------------------------------------------
• 9.3 Bias Assist Function ---------------------------------------------------------
• 9.4 Soft Start Function ----------------------------------------------------------
• 9.5 Constant Output Voltage Control ----------------------------------------
• 9.6 Leading Edge Blanking Function ----------------------------------------
• 9.7 Random Switching Function ----------------------------------------------
• 9.8 Automatic Standby Mode Function--------------------------------------
• 9.9 Brown-In and Brown-Out Function -------------------------------------
• 9.10 Overcurrent Protection (OCP) -------------------------------------------
• 9.11 Overload Protection (OLP) ------------------------------------------------
• 9.12 Overvoltage Protection (OVP) --------------------------------------------
• 9.13 Thermal Shutdown (TSD) -------------------------------------------------
• 10.1 External Components -------------------------------------------------------
• 10.2 PCB Trace Layout and Component Placement -----------------------

Features

 Current Mode Type PWM Control  Brown-In and Brown-Out Function  Soft Start Function  Auto Standby Function No Load Power Consumption < 25mW  Operation Mode  Random Switching Function  Slope Compensation Function  Leading Edge Blanking Function  Bias Assist Function  Protections ・Two Types of Overcurrent Protection (OCP): Pulse-by-Pulse, built-in compensation circuit to minimize OCP point variation on AC input voltage ・Overload Protection with timer (OLP): Auto-restart ・Overvoltage Protection (OVP): Auto-restart ・Thermal Shutdown (TSD) with hysteresis: Auto-restart Typical Application Circuit VAC C6 R1 BR1 D P PC1C3 ROCP CY 1 2 3 4 D/ST D/ST BR NC S/OCP FB/OLPGND VCC 8 7 5 STR-A6000×Z C4RC RB RA D51 C51 R51 R52 U51 R54 R56 C52 S PC1 R53 R55 L51 C53 VOUT (-) TC_STR-A6000xZ_1_R2 (+) Package DIP8 Not to Scale Lineup  Electrical Characteristics Products MOSFET VDSS(min.) Frequency fOSC(AVG) STR-A606×MZ 700 V 67 kHz STR-A606×HZ 700 V 100 kHz  MOSFET ON Resistance and Output Power, POUT* Products RDS(ON) (max.) POUT (Adapter) POUT (Open frame) AC230V AC85 ~265V AC230V AC85 ~265V fOSC(AVG) = 67 kHz STR-A6069MZ 6.0 Ω 15 W 10 W 26 W 17 W STR-A6061MZ 3.95 Ω 18.5 W 14 W 31 W 21 W STR-A6063MZ 2.3 Ω 24 W 19.5 W 37.5 W 26 W fOSC(AVG) = 100 kHz STR-A6069HZ 6.0 Ω 17 W 11 W 30 W 19.5 W STR-A6061HZ 3.95 Ω 20.5 W 15 W 35 W 23.5 W STR-A6063HZ 2.3 Ω 25 W 20 W 40 W 28 W * The output power is actual continues power that is measured at 50 °C ambient. The peak output power can be 120 to 140 % of the value stated here. Core size, ON Duty, and thermal design affect the output power. It may be less than the value stated here.

Applications

 White goods  Office Automation Equipment  Audio Visual Equipment  Industrial Equipment  Other SMPS http://www.sanken-ele.co.jp/en/

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 3 Mar.13, 2015 1. Absolute Maximum Ratings  The polarity value for current specifies a sink as "+," and a source as "−," referencing the IC.  Unless otherwise specified T A = 25 °C, 7 pin = 8 pin Parameter Symbol Test Conditions Pins Rating Units Notes Drain Peak Current (1) IDPEAK Single pulse 8 − 1 1.8 A A6069MZ/HZ

2.5 A6061MZ/HZ

4.0 A6063MZ/HZ

Maximum Switching Current (2) IDMAX TA = − 40 ~ 125 °C 8 − 1 1.8 A A6069MZ/HZ Avalanche Energy(3)(4) EAS ILPEAK=1.8A 8 − 1 mJ A6069MZ/HZ ILPEAK=1.78A 36 A6061MZ/HZ ILPEAK=2.15A 53 A6063MZ/HZ S/OCP Pin Voltage VS/OCP 1 − 3 − 2 to 6 V BR Pin Voltage VBR 2 − 3 − 0.3 to 7.5 V BR Pin Sink Current IBR 2 − 3 1.0 mA FB/OLP Pin Voltage VFB 4 − 3 − 0.3 to 14 V FB/OLP Pin Sink Current IFB 4 − 3 1.0 mA VCC Pin Voltage VCC 5 − 3 32 V D/ST Pin Voltage VD/ST 8 − 3 − 1 to VDSS V MOSFET Power Dissipation(5) PD1 (6) 8 − 1 1.35 W Control Part Power Dissipation PD2 5 − 3 1.2 W Operating Ambient Temperature TOP − − 40 to 125 °C Storage Temperature Tstg − − 40 to 125 °C Channel Temperature Tch − 150 °C (1) Refer to 3.2MOSFET Safe Operating Area Curves (2) The Maximum Switching Current is the drain current determined by the drive voltage of the IC and threshold voltage of the MOSFET, VGS(th). (3) Refer to Figure 3-2 Avalanche Energy Derating Coefficient Curve (4) Single pulse, VDD = 99 V, L = 20 mH (5) Refer to 3.3 TA-PD1Curve (6) When embedding this hybrid IC onto the printed circuit board (copper area in a 15 mm × 15 mm)

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 4 Mar.13, 2015 2. Electrical Characteristics  The polarity value for current specifies a sink as "+," and a source as "−," referencing the IC.  Unless otherwise specified, TA = 25 °C, VCC = 18 V, 7 pin = 8 pin Parameter Symbol Test Conditions Pins Min. Typ. Max. Units Notes Power Supply Startup Operation Operation Start Voltage VCC(ON) 5 − 3 13.8 15.0 16.2 V Operation Stop Voltage(*) VCC(OFF) 5 − 3 7.6 8.5 9.2 V Circuit Current in Operation ICC(ON) VCC = 12 V 5 − 3 − 1.5 2.5 mA Startup Circuit Operation Voltage VST(ON) 8 – 3 40 47 55 V Startup Current ICC(ST) VCC = 13.5 V 5 − 3 − 4.5 − 2.5 − 1.2 mA Startup Current Biasing Threshold Voltage VCC(BIAS) ICC = −500 µA 5 − 3 8.0 9.6 10.5 V Normal Operation Average Switching Frequency fOSC(AVG) 8 – 3 60 67 73 kHz A60××MZ 90 100 110 A60××HZ Switching Frequency Modulation Deviation Δf 8 − 3 − 5.4 − kHz A60××MZ − 8.4 − A60××HZ Maximum Feedback Current IFB(MAX) VCC = 12 V 4 − 3 − 170 − 130 − 85 µA Minimum Feedback Current IFB(MIN) 4 − 3 − 21 − 13 − 5 µA Standby Operation FB/OLP Pin Oscillation Stop Threshold Voltage VFB(OFF) 4 − 3 1.06 1.16 1.26 V Brown-In / Brown-Out Function Brown-In Threshold Voltage VBR(IN) 2 – 3 5.43 5.60 5.77 V Brown-Out Threshold Voltage VBR(OUT) 2 − 3 4.65 4.80 4.95 V BR Pin Clamp Voltage VBR(CLAMP) IBR = 100 µA 2 − 3 6.5 6.9 7.3 V BR Function Disabling Threshold Voltage VBR(DIS) 2 − 3 0.4 0.6 0.8 V Protection Maximum ON Duty DMAX 8 − 3 70 75 80 % Leading Edge Blanking Time tBW − − 330 − ns OCP Compensation Coefficient DPC − − 17.3 − mV/μs A60××MZ − 25.8 − A60××HZ OCP Compensation ON Duty DDPC − − 36 − % OCP Threshold Voltage at Zero ON Duty VOCP(L) 1 − 3 0.735 0.795 0.855 V OCP Threshold Voltage at 36% ON Duty VOCP(H) 1 − 3 0.843 0.888 0.933 V OCP Threshold Voltage in Leading Edge Blanking Time VOCP(LEB) 1 − 3 − 1.69 − V OLP Threshold Voltage VFB(OLP) 4 − 3 6.8 7.3 7.8 V (*) VCC(BIAS) > VCC(OFF) always.

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 5 Mar.13, 2015 Parameter Symbol Test Conditions Pins Min. Typ. Max. Units Notes OLP Delay Time tOLP 4 − 3 55 75 90 ms OLP Operation Current ICC(OLP) 5 − 3 − 220 − µA FB/OLP Pin Clamp Voltage VFB(CLAMP) 4 − 3 10.5 11.8 13.5 V OVP Threshold Voltage VCC(OVP) 5 − 3 27.0 29.1 31.2 V Thermal Shutdown Operating Temperature Tj(TSD) − 127 145 − °C Thermal Shutdown Temperature Hysteresis Tj(TSD)HYS − − 80 − °C MOSFET Drain-to-Source Breakdown Voltage VDSS IDS = 300 µA 8 − 1 700 − − V Drain Leakage Current IDSS VDS = 700 V 8 − 1 − − 300 µA On-Resistance RDS(ON) IDS = 0.4 A 8 − 1 − − 6.0 Ω A6069MZ /HZ − − 3.95 Ω A6061MZ /HZ − − 2.3 Ω A6063MZ /HZ Switching Time tf 8 − 1 − − 250 ns Thermal Resistance Channel to Case θch-C − − − 22 °C/W 3. Performance Curves

3.1 Derating Curves

Figure 3-1 SOA Temperature Derating Coefficient Curve Figure 3-2 Avalanche Energy Derating Coefficient Curve 100 0 25 50 75 100 125 150 Safe Operating Area Temperature Derating Coefficient (%) Channel Temperature, Tch (°C) 100 25 50 75 100 125 150 EAS Temperature Derating Coefficient (%) Channel Temperature, Tch (°C)

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 6 Mar.13, 2015

3.2 MOSFET Safe Operating Area Curves

 When the IC is used, the safe operating area curve should be multiplied by the temperature derating coefficient derived from Figure 3-1.  The broken line in the safe operating area curve is the drain current curve limited by on-resistance.  Unless otherwise specified, TA = 25 °C, Single pulse  STR-A6061MZ/HZ  STR-A6063MZ/HZ  STR-A6069MZ/HZ

3.3 Ambient Temperature versus Power Dissipation Curve

0.01 0.1 1 10 100 1000 Drain Current, ID (A) Drain-to-Source Voltage (V) S_STR-A6061xZ_R1 0.01 0.1 1 10 100 1000 Drain Current, ID (A) Drain-to-Source Voltage (V) 0.1ms 1ms S_STR-A6063xZ_R1 0.01 0.1 1 10 100 1000 Drain Current, ID (A) Drain-to-Source Voltage (V) S_STR-A6069xZ_R1 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 25 50 75 100 125 150 Power Dissipation, PD1 (W) Ambient Temperature, TA (°C ) PD1=1.35W PD1_STR-A6000xZ_R2 0.1ms 1ms 0.1ms 1ms

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 7 Mar.13, 2015

3.4 Transient Thermal Resistance Curves

 STR-A6061MZ/HZ  STR-A6063MZ/HZ  STR-A6069MZ/HZ 0.01 0.1 100 Transient Thermal Resistance θch-c (°C/W) Time (s) TR_STR-A6061xZ_R1 0.01 0.1 100 Transient Thermal Resistance θch-c (°C/W) Time (s) TR_STR-A6063xZ_R1 0.01 0.1 100 Transient Thermal Resistance θch-c (°C/W) Time (s) TR_STR-A6069xZ_R1 1µ 10µ 100µ 1m 10m 100m 1s 1µ 10µ 100µ 1m 10m 100m 1s 1µ 10µ 100µ 1m 10m 100m 1s

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 8 Mar.13, 2015 4. Functional Block Diagram UVLO OVP TSDREG Brown-in Brown-out PWM OSC OLP Feedback control Slope compensation LEB Drain peak current compensation OCP Startup DRV VREG VCC VCC BR FB/OLP D/ST S/OCP GND 7,8 S R Q BD_STR-A6000xZ_R1 VREG 5. Pin Configuration Definitions S/OCP BR GND FB/OLP VCC D/ST D/ST Pin Name Descriptions

1 S/OCP Power MOSFET source and Overcurrent

Protection (OCP) signal input

2 BR Brown-In and Brown-Out detection voltage input

3 GND Ground

4 FB/OLP Constant voltage control signal input and

Overload Protection (OLP) signal input

5 VCC Power supply voltage input for control part and

Overvoltage Protection (OVP) signal input 6 − (Pin removed) D/ST Power MOSFET drain and startup current input

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 10 Mar.13, 2015 7. Package Outline  DIP8 NOTES: 1) Dimension is in millimeters. 2) Pb-free. Device composition compliant with the RoHS directive. 8. Marking Diagram Part Number A 6 0 × × × S K Y M D Z X X X X X X Sanken Control Number Lot Number Y is the Last digit of the year (0 to 9) M is the Month (1 to 9, O, N or D) D is a period of days: 1 : 1st to 10th 2 : 11th to 20th 3 : 21st to 31st

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 11 Mar.13, 2015 9. Operational Description  All of the parameter values used in these descriptions are typical values, unless they are specified as minimum or maximum.  With regard to cu rrent direction, "+" indicates sink current (toward the IC) and " –" indicates source current (from the IC).

9.1 Startup Operation

Figure 9-1 shows the circuit around the IC. The IC incorporates the startup circuit. The circuit is connected to the D/ST pin. When the D/ST pin voltage reaches to Startup Circuit Operation Voltage , VST(ON) = 47 V, the startup circuit starts operation. During the startup process, the constant current, ICC(ST) = − 2.5 mA, charges C2 at the VCC pin. When the VCC pin voltage increases to V CC(ON) = 15.0 V, the control circuit starts operation. During the IC operation, the voltage rectified the auxiliary winding voltage, V D, of Figure 9-1 becomes a power source to the VCC pin. After switching operation begins, the startup circuit turns off automatically so that its current consumption becomes zero. The approximate value of auxiliary winding v oltage is about 15 V to 20 V , taking account of the winding turns of D winding so that VCC pin voltage becomes Equation (1) within the specification of input and output voltage variation of power supply. .)(minVV.)(maxV )OVP(CCCC)BIAS(CC  ⇒10.5 (V) The oscillation start timing of the IC depends on Brown-In / Brown-Out Function (refer to Section 9.9).

9.1.1 Without Brown-In / Brown-Out

Function (BR pin voltage is VBR(DIS) = 0.6 V or less) When VCC pin voltage increases to VCC(ON), the IC starts switching operation, As shown in Figure 9-2. The startup time of the IC is determined by C2 capacitor value. The approximate startup time t START (shown in Figure 9-2) is calculated as follows: )ST(CC )INT(CC)ON(CC START I VV×C2t － (2) where, tSTART : Startup time of the IC (s) VCC(INT) : Initial voltage on the VCC pin (V)

9.1.2 With Brown-In / Brown-Out Function

When BR pin voltage is more than VBR(DIS) = 0.6 V and less than VBR(IN) = 5.60 V, the Bias Assist Function (refer to Section 9.3) is disabled. Thus, VCC pin voltage repeats increasing to VCC(ON) and decreasing to VCC(OFF) (shown in Figure 9-3). When the BR pin voltage becomes VBR(IN) or more, the IC starts switching operation. VAC D2 R2 D P BR1 VCC GND D/ST 7, 8 5U1 VD BR Figure 9-1 VCC pin peripheral circuit (Without Brown-In / Brown-Out Function) VCC(ON) VCC pin voltage Drain current, ID tSTART Figure 9-2 Startup operation (Without Brown-In / Brown-Out Function) VCC(ON) VCC pin voltage Drain current, ID tSTART BR pin voltage VBR(IN) VCC(OFF) Figure 9-3 Startup operation (With Brown-In / Brown-Out Function)

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 12 Mar.13, 2015

9.2 Undervoltage Lockout (UVLO)

Figure 9-4 shows the relationship of VCC pin voltage and circuit current I CC. When the VCC pin voltage decreases to V CC(OFF) = 8.5 V, the control circuit stops operation by the Undervoltage Lockout (UVLO) circuit, and reverts to the state before startup. Circuit current, ICC ICC（ON） VCC（OFF） VCC（ON） VCC pin voltage StartStop Figure 9-4 Relationship between VCC pin voltage and ICC

9.3 Bias Assist Function

By the Bias Assist Function, the startup failure is prevented. When FB pin voltage is the FB/OLP Pin Oscillation Stop Threshold Voltage , V FB(OFF)= 1.16 V or less and VCC pin voltage decreases to the Startup Current Biasing Threshold Voltage, V CC(BIAS) = 9.6 V, t he Bias Assist Function is activated. When the Bias Assist Function is activated, the VCC pin voltage is kept almo st constant voltage, V CC(BIAS) by providing the startup current, I CC(ST), from the startup circuit. Thus, the VCC pin voltage is kept more than VCC(OFF). Since the startup failure is prevented by the Bias Assist Function, the value of C 2 connected to the VCC pin can be small. Thus, the startup time and the response time of the Overvoltage Protection (OVP) become shorter. The operation of the Bias Assist Function in startup is as follows. It is necessary to check and adjust the startup process based on actua l operation in the application, so that poor starting conditions may be avoided. Figure 9-5 shows the VCC pin voltage behavior during the startup period. After the VCC pin voltage increases to V CC(ON) = 15.0 V at startup, the IC starts the operation. Then circuit current increases and the VCC pin voltage decreases. At the same time, the auxiliary winding voltage , VD, increases in proportion to output voltage. These are all balanced to produce the VCC pin voltage. When the VCC pin voltage is decrease to VCC(OFF) = 8.5 V in startup operation, the IC stops switching operation and a startup failure occurs. When the output load is light at startup, the output voltage may become more than the target voltage due to the delay of feedback circuit. In this case, the FB pin voltage is decreased by the feedback control. When the FB pin voltage decreases to VFB(OFF) or less, the IC stops switching operation and the VCC pin volt age decreases. When the VCC pin voltage decreases to V CC(BIAS), the Bias Assist Function is activated and the startup failure is prevented. IC starts operation VCC pin voltage VCC(ON) VCC(BIAS) VCC(OFF) Startup failure Startup success Target operating voltage Time Bias assist period Increase with rising of output voltage Figure 9-5 VCC pin voltage during startup period

9.4 Soft Start Function

Figure 9-6 shows the behavior of VCC pin voltage and drain current during the startup period. VCC(ON) VCC(OFF) Time VCC pin voltage Startup of SMPS Normal opertion D/ST pin current, ID tLIM < tOLP (min.) Soft start period approximately 8.75 ms (fixed) Time Startup of IC tSTART Limited by OCP operation Figure 9-6 VCC and ID behavior during startup The IC activates the soft start circuitry during the startup period. Soft start time is fixed to around 8.75 ms. during the soft start period, over current threshold is increased step-wisely (7 steps). This function reduces the voltage and the current stress of a power MOSFET and a secondary side rectifier diode. Since the Leading Edge Blanking Function (refer to Section 9.6) is deactivated during the soft start period, there is the case that ON tim e is less than the leading

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 13 Mar.13, 2015 edge blanking time, tBW = 330 ns. After the soft start period, D/ST pin current, I D, is limited by the Overcurrent Protection (OCP), until the output voltage increases to the target operating volta ge. This period is given as tLIM. In case t LIM is longer than the OLP Delay Time, t OLP, the output power is limited by the Overload Protection (OLP). Thus, it is necessary to adjust the value of output capacitor and the turn ratio of auxiliary winding D so that the tLIM is less than tOLP = 55 ms (min.).

9.5 Constant Output Voltage Control

The IC achieves the constant voltage control of the power supply output by using the current -mode control method, which enhances the respo nse speed and provides the stable operation. FB/OLP pin voltage is internally added the slope compensation at the feedback control (refer to Section 4.Functionnal Block Diagram ), and the target voltage, VSC, is generated. The IC compares the voltage, V ROCP, of a current detection resistor with the target voltage, V SC, by the internal FB comparator, and controls the peak value of V ROCP so that it gets close to V SC, as shown in Figure 9-7 and Figure 9-8. PC1 FB/OLPS/OCP IFB GND ROCPVROCP 1 3 Figure 9-7 FB/OLP pin peripheral circuit VSC FB Comparator Drain current, ID Voltage on both sides of ROCP VROCP Target voltage including Slope Compensation Figure 9-8 Drain current, ID, and FB comparator operation in steady operation  Light load conditions When load conditions become lighter, the output voltage, V OUT, increases. Thus, the feedback current from the error amplifier on the secondary -side als o increases. The feedback current is sunk at the FB/OLP pin, transferred through a photo -coupler, PC1, and the FB/OLP pin voltage decreases. Thus, V SC decreases, and the peak value of V ROCP is controlled to be low, and the peak drain current of ID decreases. This control prevents the output voltage from increasing.  Heavy load conditions When load conditions become greater, the IC performs the inverse operation to that described above. Thus, VSC increases and the peak drain current of I D increases. This con trol prevents the output voltage from decreasing. In the current mode control method, when the drain current waveform becomes trapezoidal in continuous operating mode, even if the peak current level set by the target voltage is constant, the on -time fluctuates based on the initial value of the drain current. This results in the on -time fluctuating in multiples of the fundamental operating frequency as shown in Figure 9-9. This is called the subharmonics phenomenon. In order to avoid this, th e IC incorporates the Slope Compensation Function. Because the target voltage is added a down -slope compensation signal, which reduces the peak drain current as the on -duty gets wider relative to the FB/OLP pin signal to compensat e V SC, the subharmonics phenomenon is suppressed. Even if subharmonic oscillations occur when the IC has some excess supply being out of feedback control, such as during startup and load shorted, this does not affect performance of normal operation. tON1 Target voltage without Slope Compensation tON2 T T T Figure 9-9 Drain current, ID, waveform in subharmonic oscillation

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 14 Mar.13, 2015

9.6 Leading Edge Blanking Function

The constant voltage control of output of the IC uses the peak-current-mode control method. In the peak-current-mode control method, there is a case that a power MOSFET turns off due to unexpected response of the FB comparator or Overcurrent Protection circuit (OCP) to the steep surge current in turning on the power MOSFET. In order to prevent this response to the surge voltage in turning-on the power MOSFET, the Leading Edge Blanking Time, tBW = 330 ns is built-in. During tBW, the OCP threshold voltage becomes VOCP(LEB) = 1.69 V in order not to respond to the turn -on drain current surge (refer to Section 9.10).

9.7 Random Switching Function

The IC modulates its switching frequency randomly by superposing the modulating frequency on f OSC(AVG) in normal operation. This function reduces the conduction noise compared to others without this function, and simplifies noise filtering of the input lines of power supply.

9.8 Automatic Standby Mode Function

Automatic standby mode is activated automa tically when FB/OLP pin voltage decreases to VFB(OFF) = 1.16 V. The operation mode becomes burst oscillation, as shown in Figure 9-10. Burst oscillation mode reduces switching lo sses and improves power supply efficiency because of periodic non-switching intervals. Generally, to improve efficiency under light load conditions, the frequency of the burst oscillation mode becomes just a few kilohertz. Because the IC suppresses the peak drain current well during burst oscillation mode, audible noises can be reduced. If the VCC pin voltage decreases to V CC(BIAS) = 9.6 V during the transition to the burst oscillation mode, the Bias Assist Function is ac tivated and stabilizes the Standby mode operation, because I CC(ST) is provided to the VCC pin so that the VCC pin voltage does not decrease to VCC(OFF). However, if the Bias Assist Function is always activated during steady -state operation including standb y mode, the power loss increases. Therefore, the VCC pin voltage should be more than V CC(BIAS), for example, by adjusting the turns ratio of the auxiliary winding and secondary winding and/or reducing the value of R2 (refer to Section 10.1). Normal operation Standby operation Normal operation Burst oscillationOutput current, IOUT Drain current, ID Below several kHz Figure 9-10 Auto Standby mode timing

9.9 Brown-In and Brown-Out Function

This function stops switching operation when it detects low input line voltage, and thus prevents excessive input current and overheating. This function turns on and off switc hing operation according to BR pin voltage detecting the AC input voltage. When the BR pin voltage becomes more than VBR(DIS) = 0.6 V, this function is activated. Figure 9-11 shows waveforms of the BR pin voltage and the drain currnet. Even if the IC is in the operating state that the VCC pin voltage is V CC(OFF) or more, when the AC input voltage decreases from steady -state and the BR pin voltage falls to V BR(OUT) = 4.80 V or less for the OLP Delay Time, t OLP = 75 ms, the IC stops switching operation. When the AC input voltage increases and the BR pin voltage reaches VBR(IN) = 5.60 V or more in the operating state that VCC pin voltage is V CC(OFF) or more, the IC starts switching operation. When the Brown -In and Brown -Out Function is unnecessary, connect the BR pin trace to the GND pin trace so that the BR pin voltage is VBR(DIS) or less. BR pin voltage VBR(IN) VBR(OUT) tOLPDrain current, ID Figure 9-11 BR pin voltage and drain current waveforms There are two types of detection method as follows:

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 15 Mar.13, 2015

9.9.1 DC Line Detection

Figure 9-12 shows the BR pin peripheral circuit of DC line detection. There is a ripple voltage on C1 occurring at a half period of AC cycle. In order to detect each peak of the ripple voltage , t he time constant of R C and C 4 should be shorter than a half period of AC cycle. Since the cycle of the ripple voltage is shorter than tOLP, the switching operation does not stop when only the bottom part of the ripple voltage becomes lower than VBR(OUT). Thus it minimizes the influence of load conditions on the voltage detection. The components around the BR pin: ・ RA and R B are a few megohms. Because of high voltage applied and high resistance, it is recommended to select a re sistor designed against electromigration or use a combination of resistors in series for that to reduce each applied voltage, according to the requirement of the application. ・ RC is a few hundred kilohms ・ C4 is 470 pF to 2200 pF for high frequency noise reduction VDC BR C4RC GND RB RA VAC BR1 Figure 9-12 DC line detection Neglecting the effect of both input resistance and forward voltage of rectifier diode, the reference value of C1 voltage when the Brown-In and Brown-Out Function is activated is calculated as follows: C BA )TH(BR)OP(DC R RR1VV (3) where, VDC(OP) : C1 voltage when the Brown-In and Brown-Out Function is activated VBR(TH) : Any one of threshold voltage of the BR pin (see Table 9-1) Table 9-1 BR pin threshold voltage Parameter Symbol Value (Typ.) Brown-In Threshold Voltage VBR(IN) 5.60 V Brown-Out Threshold Voltage VBR(OUT) 4.80 V VDC(OP) can be expressed as the effective value of AC input voltage using Equation (4). )OP(DCRMS)OP(AC V 1V  (4) RA, RB, RC and C4 should be selected based on actual operation in the application.

9.9.2 AC Line Detection

Figure 9-13 shows the BR pin peripheral circuit of AC line detection. In order to detect t he AC input voltage, the time constant of R C and C4 should be longer than the period of AC cycle. Thus the response of the BR pin detection becomes slow compared with the DC line detection. This method detects the AC input voltage, and thus it minimizes th e influence from load conditions. Also, this method is free of influence from C1 charging and discharging time. VDC BR C4RC GND RB RA VAC BR1 VCC RS Figure 9-13 AC line detection The components around the BR pin: ・ RA and R B are a few megohms. Because of high voltage applied and high resistance, it is recommended to select a resistor designed against electromigration or use a combination of resistors in series for that to reduce each applied voltage, according to the requirement of the application. ・ RC is a few hundred kilohms ・ RS must be adjusted so that the BR pin voltage is more than V BR(DIS) = 0.6 V when the VCC pin voltage is VCC(OFF) = 8.5 V ・ C4 is 0.22 μF to 1 μF for averaging AC input voltage and high frequency noise reduction

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 16 Mar.13, 2015 Neglecting the effect of input resistance is zero, the reference effective value of AC input voltage when the Brown-In and Brown -Out Function is activated is calculated as follows: C BA )TH(BRRMS)OP(AC R RR1V V (5) where, VAC(OP)RMS : The effective value of AC input voltage when the Brown-In and Brown -Out Function is activated VBR(TH) : Any one of threshold voltage of the BR pin (see Table 9-1) RA, RB, RC and C4 should be selected based on actual operation in the application.

9.10 Overcurrent Protection (OCP)

Overcurrent Protection (OCP) detects each drain peak current level of a power MOSFET on pulse -by-pulse basis, and limits the output power when the current level reaches to OCP threshold voltage. During the Leading Edge Blanking Time, the OCP threshold voltage becomes VOCP(LEB) = 1.69 V which is higher than the normal OCP threshold volt age as shown in Figure 9-14. Changing to this threshold voltage prevents the IC from responding to the surge voltage in turning-on the power MOSFET . This function operates as protection at the condition such as output windings shorted or unusual withstand voltage of secondary -side rectifier diodes. When the power MOSFET turns on, the surge voltage width of the S/OCP pin should be less than tBW, as shown in Figure 9-14. In order to p revent surge voltage, pay extra attention to R OCP trace layout (refer to Section 10.2). In addition, if a C (RC) damper snubber of Figure 9-15 is used, reduce the capacitor value of damper snubber. Surge pulse voltage width at turning-on tBW VOCP(LEB) VOCP’ Figure 9-14 S/OCP pin voltage D51 ROCP C51 C（RC） Damper snubber 7, 8 D/ST S/OCP C（RC） Damper snubber Figure 9-15 Damper snubber < Input Compensation Function > ICs with PWM control usually have some propagation delay time. The steeper the slope of the actual drain current at a high AC input voltage is, the larger the detection voltage of actual drain peak current is, compared to V OCP. Thus, the peak current has some variation depending on the AC input voltage in OCP state. In order to reduce the variation of peak current in OCP state, the IC incorporates a built -in Input Compensation Function. The Input Compensation Function is the function of correction of the OCP threshold voltage depending with AC input voltage, as shown in Figure 9-16. When AC input voltage is low (ON Duty is broad), the OCP threshold voltage is controlled to become high. The difference of peak drain c urrent become small compared with the case where the AC input voltage is high (ON Duty is narrow). ON Duty (%) DDPC=36% VOCP(L) DMAX=75% 100 VOCP(H) 0.5 1.0 OCP Threshold Voltage after compensation, VOCP' Figure 9-16 Relationship between ON Duty and Drain Current Limit after compensation The compensation signal depends on ON Duty. The relation between the ON Duty and the OCP threshold voltage after compensation V OCP' is expressed as Equation (6). When ON Duty is broader than 36 %, the

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 17 Mar.13, 2015 VOCP' becomes a constant value VOCP(H) = 0.888 V ONTimeDPCV'V )L(OCPOCP  )AVG(OSC )L(OCP f ONDutyDPCV  (6) where, VOCP(L): OCP Threshold Voltage at Zero ON Duty (V) DPC: OCP Compensation Coefficient (mV/μs) ONTime: On-time of a power MOSFET (μs) ONDuty: On duty of a power MOSFET (%) fOSC(AVG): Average PWM Switching Frequency (kHz)

9.11 Overload Protection (OLP)

Figure 9-17 shows the FB/OLP pin peripheral circuit, and Figure 9-18 shows each waveform for Overload Protection (OLP) operation. When the peak drain current of I D is limited by Overcurrent Protection operation, the output voltage, VOUT, decreases and the feedback current from the secondary photo -coupler becomes zero. Thus, the feedback current, I FB, charges C3 connected to the FB/OLP pin and FB/OLP pin voltage increases. When the FB/OLP pin voltage increases to V FB(OLP) = 7.3 V or more for the OLP delay time, t OLP = 75 ms or more, the OLP is activated, the IC stops switching operation. During OLP operation, the Bias Assist Function is disabled. Thus, VCC pin voltage decreases to VCC(OFF), the control circuit stops operation. After that, the IC reverts to the initial state by UVLO circuit, and the IC starts operation when the VCC pin voltage increases to VCC(ON) by startup current. Thus , the intermittent operation by UVLO is repeated in OLP state. This intermittent operation reduces the stress of parts such as a power MOSFET and a secondary side rectifier diode. In addition, this operation red uces power consumption because the switching period in this intermittent operation is short compared with oscillation stop period. When the abnormal condition is removed, the IC returns to normal operation automatically. PC1 FB/OLP VCC GND D2 R2 D IFB Figure 9-17 FB/OLP pin peripheral circuit VCC pin voltage FB/OLP pin voltage Drain current, ID VCC(OFF) VFB(OLP) tOLP VCC(ON) Non-switching interval tOLP Figure 9-18 OLP operational waveforms

9.12 Overvoltage Protection (OVP)

When the voltage between the VCC pin and the GND pin increases to V CC(OVP) = 29.1 V or more, Overvoltage Protection (OVP) is activated and the IC stops switching operation. During OVP operation, the Bias Assist Function is disabled, the intermittent operation by UVLO is repeated (refer to Section 9.11). When the fault condition is removed, the IC returns to normal operation automatically (refer to Figure 9-19). When VCC pin voltage is provided by using auxiliary winding of transformer, the overvoltage conditions such as output voltage detection circuit open can be detected because the VCC pin voltage is proportional to output voltage. The approximate value of output voltage V OUT(OVP) in OVP condition is calculated by using Equation (7). )NORMAL(CC )NORMAL(OUT OUT(OVP) V VV 29.1(V) (7) where, VOUT(NORMAL): Output voltage in normal operation VCC(NORMAL): VCC pin voltage in normal operation VCC pin voltage Drain current, ID VCC(OFF) VCC(ON) VCC(OVP) Figure 9-19 OVP operational waveforms

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 18 Mar.13, 2015

9.13 Thermal Shutdown (TSD)

Figure 9-20 shows the Thermal Shutdown (TSD) operational waveforms. When the temperature of control circuit increases to Tj(TSD) = 145 °C or more, TSD is activated , and the IC stops switching operation. After that, VCC pin voltage decreases. When t he VCC pin voltage decreases to VCC(BIAS), the Bias Assist Function is activated and the VCC pin voltage is kept to over the VCC(OFF). When the temperature reduces to less than Tj(TSD)−Tj(TSD)HYS, the Bias Assist Function is disabled and the VCC p in voltage decreases to V CC(OFF). At that time, the IC stops operation by the UVLO circuit and reverts to the state before startup. After that, the startup circuit is activated, the VCC pin voltage increases to VCC(ON), and the IC starts switching operatio n again. In this way, the intermittent operation by TSD and UVLO is repeated while there is an excess thermal condition. When the fault condition is removed , the IC returns to normal operation automatically. VCC pin voltage Drain current ID VCC(OFF) VCC(ON) Tj(TSD) Tj(TSD)−Tj(TSD)HYS Bias assist function Junction Temperature, Tj VCC(BIAS) OFF ON OFF ON Figure 9-20 TSD operational waveforms 10. Design Notes

10.1 External Components

Take care to use properly rated, including derating as necessary and proper type of components.  Input and Output Electrolytic Capacitor Apply proper deratin g to ripple current, voltage, and temperature rise. Use of high ripple current and low impedance types, designed for switch mode power supplies, is recommended.  S/OCP Pin Peripheral Circuit In Figure 10-1, ROCP is the resistor for the current detection. A high frequency switching current flows to ROCP, and may cause poor operation if a high inductance resistor is used. Choose a low inductance and high surge-tolerant type. VAC C6 R1 BR1 D P PC1C3 ROCP CRD clamp snubber 1 2 3 4 D/ST D/ST BR NC S/OCP FB/OLPGND VCC 8 7 5 C4RC RB RA C（RC） Damper snubber Figure 10-1 The IC peripheral circuit  BR pin peripheral circuit Because RA and RB (see Figure 10-1) are applied high voltage and are high resistance, the following should be considered according to the requirement of the application: ▫ Select a resistor designed against electromigration, or ▫ Use a combination of resistors in series for that to reduce each applied voltage See Section 9.9 about the AC input voltage detection function and the components around the BR pin.  FB/OLP Pin Peripheral Circuit C3 (see Figure 10-1) is for high frequency noise rejection and phase compensation, and should be connected close to the FB/OLP pin and the GND pin . The value of C3 is recommended to be about 2200 pF to 0.01 µF, and should be selected based on actual operation in the application.  VCC Pin Peripheral Circuit The value of C2 is generally recommended to be 10 µF to 47 μF (refer to Section 9.1 Startup Operation, because the startup time is determined by the value of C2). In actual power supply circuit s, there are cases in which VCC pin voltage fluctuates in proportion to the output current, I OUT (see Figure 10-2), and the Overvoltage Protection (OVP) on the VCC pin may be activated. This happens because C2 is charged to a peak voltage on the aux iliary winding D, which is caused by the transient surge voltage coupled f rom the primary winding when a power MOSFET turns off.

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 20 Mar.13, 2015 Margin tape Margin tape Margin tape Margin tape P1 S1 P2 S2 D P1 S1 D S2 S1 P2 Winding structural example (a) Winding structural example (b) Bobbin Bobbin Figure 10-4 Winding structural examples

10.2 PCB Trace Layout and Component

Since the PCB circuit trace design and the component layout significantly affects operation , EMI noise, and power dissipation, the high frequency PCB trace should be low impedance with small loop and wide trace. In addition, the ground traces affect radiated EMI noise, and wide, short traces should be taken into account. Figure 10-5 shows the circuit design example. (1) Main Circuit Trace Layout This is the main trace containing switching currents, and thus it should be as wide trace and small loop as possible. If C1 and the IC are distant from each other, placing a capacitor such as film capacitor (about 0.1 μF and with proper voltage rating) close to the transformer or the IC is recommended to reduce impedance of the high frequency current loop. (2) Control Ground Trace Layout Since the operation of the IC may b e affected from the large current of the main trace that flows in control ground trace, the control ground trace should be separated from main trace and connected at a single point grounding of the point A in Figure 10-5 as close to the ROCP pin as possible. (3) VCC Trace Layout: This is the trace for supplying power to the IC, and thus it should be as small loop as possible. If C 2 and the IC are distant from each other, placing a capacitor such as film capacitor Cf (about 0.1 μF to 1.0 μF) close to the VCC pin and the GND pin is recommended. (4) ROCP Trace Layout ROCP should be placed as close as possible to the S/OCP pin. The connection between the power ground of the main trace and the IC ground should be at a single poin t ground (point A in Figure 10-5) which is close to the base of ROCP. (5) Peripheral components of the IC The components for control connected to the IC should be placed as close as possible to the IC, and should be co nnected as short as possible to the each pin. (6) Secondary Rectifier Smoothing Circuit Trace Layout: This is the trace of the rectifier smoothing loop, carrying the switching current , and thus it should be as wide trace and small loop as possible. If this trace is thin and long, inductance resulting from the loop may increase surge voltage at turning off a power MOSFET. Proper rectifier smoothing trace layout helps to increase margin against the power MOSFET breakdown voltage, and reduces stress on the clamp snubber circuit and losses in it. (7) Thermal Considerations Because the power MOSFET has a positive thermal coefficient of RDS(ON), consider it in thermal design. Since the copper area under the IC and the D/ST pin trace act as a heatsink, its traces should b e as wide as possible.

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 21 Mar.13, 2015 C1 C6 R1 D2 R2 C51 D P S PC1C3 ROCP 1 2 3 4 D/ST BR NC S/OCP FB/OLPGND 8 7 5 STR-A6000×Z A DST CY D51 (1) Main trace should be wide trace and small loop (6) Main trace of secondary side should be wide trace and small loop (7)Trace of D/ST pin should be wide for heat release (2) Control GND trace should be connected at a single point as close to the ROCP as possible (3) Loop of the power supply should be small (4)ROCP should be as close to S/OCP pin as possible. (5)The components connected to the IC should be as close to the IC as possible, and should be connected as short as possible D/ST VCC RC RA RB Figure 10-5 Peripheral circuit example around the IC

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 23 Mar.13, 2015 12. Reference Design of Power Supply As an example, the following show the power supply specif ication, the circuit schematic, the bill of materials, and the transformer specification.  Circuit schematic IC STR-A6069HZ Input voltage AC85V to AC265V Maximum output power 7.5 W Output voltage 5 V Output current 1.5 A (max.)  Circuit schematic T1 D51 R52 U51 D PC1 L51L2 C52R53 TH1 NC 1 2 4 D/ST D/ST BRS/OCP FB/OLP VCC 8 7 5 STR-A6000×Z GND 5V/1.5A C6C7 D6 R2 C51 C53 R51 R54 R55 R56 R57 PC1 C55 D3D4 TC_STR-A6000xZ_3_R3  Bill of materials Symbol Part type Ratings(1) Recommended Sanken Parts Symbol Part type Ratings(1) Recommended Sanken Parts F1 Fuse AC250V, 3A R4 (3) Metal oxide 330kΩ, 1W L1 (2) CM inductor 3.3mH R7 General 330kΩ L2 (2) Inductor 470μH R8 (3) General 2.2MΩ TH1 (2) NTC thermistor Short R9 (3) General 2.2MΩ D1 General 600V, 1A EM01A PC1 Photo-coupler PC123 or equiv D2 General 600V, 1A EM01A U1 IC － STR-A6069HZ D3 General 600V, 1A EM01A T1 Transformer See the specification D4 General 600V, 1A EM01A L51 Inductor 5μH D5 Fast recovery 1000V, 0.5A EG01C D51 Schottky 90V, 4A FMB-G19L D6 Fast recovery 200V, 1A AL01Z C51 Electrolytic 680μF, 10V C1 (2) Film, X2 0.047μF, 275V C52 (2) Ceramic 0.1μF, 50V C2 Electrolytic 10μF, 400V C53 Electrolytic 330µF, 10V C3 Electrolytic 10μF, 400V C55 (2) Ceramic 1000pF, 1kV C4 Ceramic 1000pF, 630V R51 General 220Ω C5 Electrolytic 22μF, 50V R52 General 1.5kΩ C6 (2) Ceramic 0.01μF R53 (2) General 22kΩ C7 (2) Ceramic 1000pF R54 General, 1% Short C8 (2) Ceramic Open R55 General, 1% 10kΩ C9 Ceramic, Y1 2200pF, 250V R56 General, 1% 10kΩ R1 (2) General Open R57 General Open R2 (2) General 4.7Ω U51 Shunt regulator VREF=2.5V TL431 or equiv R3 General 1.5Ω, 1/2W (1) Unless otherwise specified, the voltage rating of capacitor is 50 V or less and the power rating of resistor is 1/8 W or less. (2) It is necessary to be adjusted based on actual operation in the application. (3) Resistors applied hig h DC voltage and of high resistance are recommended to select resistors designed against electromigration or use combinations of resistors in series for that to reduce each applied voltage, according to the requirement of the application.

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 24 Mar.13, 2015  Transformer specification ▫ Primary inductance, LP ：704 μH ▫ Core size ：EI-16 ▫ Al-value ：132 nH/N2 (Center gap of about 0.26 mm) ▫ Winding specification Winding Symbol Number of turns (T) Wire diameter(mm) Construction Primary winding P1 73 2UEW-φ0.18 Two-layer, solenoid winding Auxiliary winding D 17 2UEW-φ0.18×2 Single-layer, solenoid winding Output winding S1 6 TEX-φ0.3×2 Single-layer, solenoid winding Output winding S2 6 TEX-φ0.3×2 Single-layer, solenoid winding Bobbin D VDC D/ST VCC GND (+) 5V VOUT D

• : Start at this pinCross-section view (-)

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 25 Mar.13, 2015 OPERATING PRECAUTIONS In the case that you use Sanken produ cts or design your products by using Sanken products, the reliability largely depends on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set by derating the load from each rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability. In general, derating factors include electric stresses such as electric voltage, electric current, electric power etc., environmental stresses such as ambie nt temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor products. For these stresses, instantaneous values, maximum values and minimum values must be taken into consideration. In addition, it should be noted that since power devices or IC’s including power devices have large self-heating value, the degree of derating of junction temperature affects the reliability significantly. Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions. Cautions for Storage  Ensure that storage conditions comply with the standard temperature (5 to 35°C) and the standard relative humidity (around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity.  Avoid locations where dust or harmful gases are present and avoid direct sunlight.  Reinspect for rust on leads and solderability of the products that have been stored for a long time. Cautions for Testing and Handling When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between the product pins, and wrong connections. Ensure all test parameters are within the ratings specified by Sanken for the products. Remarks About Using Thermal Silicone Grease  When thermal silicone grease is used, it shall be applied evenly and thinly. If more silicone grease than required is applied, it may produce excess stress.  The thermal silicone gr ease that has been stored for a long period of time may cause cracks of the greases, and it cause low radiation performance. In addition, the old grease may cause cracks in the resin mold when screwing the products to a heatsink.  Fully consider preventing foreign materials from entering into the thermal silicone grease. When foreign mat erial is immixed, radiation performance may be degraded or an insulation failure may occur due to a damaged insulating plate.  The thermal silicone greases that are recommended for the resin molded semiconductor should be used. Our recommended thermal silicone grease is the following, and equivalent of these. Type Suppliers G746 Shin-Etsu Chemical Co., Ltd. YG6260 Momentive Performance Materials Japan LLC SC102 Dow Corning Toray Co., Ltd. Soldering  When soldering the products, please be sure to minimize the working time, within the following limits:

• 260 ± 5 °C 10 ± 1 s (Flow, 2 times)
• 380 ± 10 °C 3.5 ± 0.5 s (Soldering iron, 1 time)  Soldering should be at a distance of at least 1.5 mm from the body of the products. Electrostatic Discharge  When handling the products, the operator must be grounded. Grounded wrist straps worn should have at least 1M Ω of resistance from the operator to ground to prevent shock hazard, and it should be placed near the operator.  Workbenches where the products are handled should be grounded and be provided with conductive table and floor mats.  When using measuring equipment such as a curve tracer, the equipment should be grounded.  When soldering the p roducts, the head of soldering irons or the solder bath must be grounded in order to prevent leak voltages generated by them from being applied to the products.  The products should always be stored and transported in Sanken shipping containers or conductiv e containers, or be wrapped in aluminum foil.

STR-A6000MZ/HZ - DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 26 Mar.13, 2015 IMPORTANT NOTES  The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest revision of the document before use.  Application examples, operation examples and recommended examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, inte llectual property rights , life, body, property or any other rights of Sanken or any third party which may result from its use.  Unless otherwise agreed in writing by Sanken, Sanken makes no warranties of any kind, whether express or implied, as to the produ cts, including product merchantability, and fitness for a particular purpose and special environment, and the information, including its accuracy, usefulness, and reliability, included in this document.  Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction.  Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or appa ratus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traff ic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales representativ e to discuss, prior to the use of the products herein. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited.  When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the products, please duly consider all possible risk s that may result from all such uses in advance and proceed therewith at your own responsibility.  Anti radioactive ray design is not considered for the products listed herein.  Sanken assumes no responsibility for any troubles, such as dropping products cau sed during transportation out of Sanken’s distribution network.  The contents in this document must not be transcribed or copied without Sanken’s written consent.