STQ1HNK60R

STD1NK60 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

N-CHANNEL 600V - 8Ω - 1A DPAK / IPAK / TO-92 SuperMESH™Power MOSFET ■ TYPICAL R DS (on) = 8Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ NEW HIGH VOLTAGE BENCHMARK

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products.

APPLICATIONS

■ SWITCH MODE LOW POWER SUPPLIES (SMPS) ■ LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS) ■ LOW POWER BATTERY CHARGERS

ORDERING INFORMATION

TYPE V DSS R DS(on) ID Pw STD1NK60 STD1NK60-1 STQ1HNK60R 600 V 600 V 600 V < 8.5Ω < 8.5Ω < 8.5Ω 0.4 A 30 W 30 W SALES TYPE MARKING PACKAGE PACKAGING STD1NK60T4 D1NK60 DPAK TAPE & REEL STD1NK60-1 D1NK60 IPAK TUBE STQ1HNK60R 1HNK60R TO-92 BULK STQ1HNK60R-AP 1HNK60R TO-92 AMMOPAK IPAK TO-92 TO-92 (Ammopack) DPAK INTERNAL SCHEMATIC DIAGRAM

STD1NK60 - STD1NK60-1 - STQ1HNK60R ABSOLUTE MAXIMUM RATINGS (/circle6 ) Pulse width limited by safe operating area (1) ISD ≤1.0A, di/dt≤100A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX. THERMAL DATA AVALANCHE CHARACTERISTICS Symbol Parameter Value Unit STD1NK60 STD1NK60-1 STQ1HNK60R VDS Drain-source Voltage (VGS =0 ) 600 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 600 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 1.0 0.4 A ID Drain Current (continuous) at TC = 100°C 0.63 0.25 A IDM (/circle6 ) Drain Current (pulsed) 4 1.6 A PTOT Total Dissipation at TC = 25°C 30 3 W Derating Factor 0.24 0.025 W/°C dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 °C DPAK / IPAK TO-92 Rthj-case Thermal Resistance Junction-case Max 4.16 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 120 °C/W Rthj-lead Thermal Resistance Junction-lead Max 40 °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 260 °C Symbol Parameter Max Value Unit DPAK / IPAK TO-92 IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) EAS Single Pulse Avalanche Energy (starting Tj= 25 °C, ID =IAR ,VDD =5 0V ) 25 mJ

STD1NK60 - STD1NK60-1 - STQ1HNK60R ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1m A ,VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating VDS = Max Rating, TC = 125 °C µA µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ± 30V ±100 nA VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250µA 2.25 3 3.7 V R DS(on) Static Drain-source On Resistance VGS =1 0 V ,ID = 0.5 A 8 8.5 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS >ID(on)xR DS(on)max, ID = 0.5 A C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5 V ,f=1M H z ,VGS = 0 156 23.5 3.8 pF pF pF Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) tr Turn-on Delay Time Rise Time VDD =3 0 0V ,ID = 0.5 A R G = 4.7Ω VGS =1 0V (Resistive Load see, Figure 3) 6.5 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =4 8 0 V ,ID = 1.0 A, VGS =1 0 V ,RG = 4.7Ω 1.1 3.4 10 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID = 0.5 A R G =4 . 7Ω VGS =1 0V (Resistive Load see, Figure 3) ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 1.0 A, R G =4 . 7Ω, VGS = 10V (Inductive Load see, Figure 5) ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) A A VSD (1) Forward On Voltage ISD = 1.0 A, VGS =0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, di/dt = 100A/µs VDD =2 5 V ,Tj= 150°C (see test circuit, Figure 5) 229 377 3.3 ns µC A

STD1NK60 - STD1NK60-1 - STQ1HNK60R Thermal Impedance For TO-92 Thermal Impedance For DPAK/IPAKSafe Operating Area For DPAK/IPAK Safe Operating Area For TO-92 Output Characteristics Transfer Characteristics

STD1NK60 - STD1NK60-1 - STQ1HNK60R Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp. Static Drain-source On ResistanceTransconductance Gate Charge vs Gate-source Voltage Capacitance Variations

STD1NK60 - STD1NK60-1 - STQ1HNK60R Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics Max Id Current vs Tc Maximum Avalanche Energy vs Temperature

STD1NK60 - STD1NK60-1 - STQ1HNK60R Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load

STD1NK60 - STD1NK60-1 - STQ1HNK60R DIM. mm inch A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A C H D LL2 1 3 = = B E G = = = = TO-251 (IPAK) MECHANICAL DATA 0068771-E

STD1NK60 - STD1NK60-1 - STQ1HNK60R DIM. mm inch A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0 o 8o 0o 0o P032P_B TO-252 (DPAK) MECHANICAL DATA

STD1NK60 - STD1NK60-1 - STQ1HNK60R DIM. mm. inch A 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V5 ° 5 ° TO-92 MECHANICAL DATA

STD1NK60 - STD1NK60-1 - STQ1HNK60R TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* DPAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY 2500 2500 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 TAPE MECHANICAL DATA All dimensions are in millimetersAll dimensions are in millimeters

STD1NK60 - STD1NK60-1 - STQ1HNK60R DIM. mm. inch A1 4.8 0.19 T 3.8 0.15 T1 1.6 0.06 T2 2.3 0.09 d 0.458 0.505 0.018 0.02 delta H -2 2 -0.08 0.08 W 17.5 18 19 0.69 0.71 0.74 W2 0.5 0.02 H 18.5 20.5 0.72 0.80 H1 25 0.98 t 0.9 0.035 L 11 0.43 l1 3 0.11 delta P -1 1 -0.04 0.04 TO-92 AMMOPACK

STD1NK60 - STD1NK60-1 - STQ1HNK60R Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com