STQ1HN60K3-AP STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Gate charge minimized
  • Very low intrinsic capacitance
  • Improved diode reverse recovery characteristics
  • Zener-protected

Applications

  • Switching applications

Description

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. D(2) G(1) S(3) AM01476v1 TO-92 Order code V DS RDS(on) max ID PTOT STQ1HN60K3-AP 600 V 8 Ω 0.4 A 3 W Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Current limited by package power capability
  2. Pulse width limited by safe operating area

Table 3. Thermal data

2 Electrical characteristics

Table 4. On /off states Table 5. Dynamic

  1. C o(tr) is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS
  2. C o(tr) is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS

voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. Table 6. Switching times Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 8. Gate-source Zener diode

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on-resistance

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs Figure 11. Normalized on-resistance vs Figure 12. Source-drain diode forward Figure 13. Output capacitance stored energy

0 Qg(nC)

0 VDS(V)

Figure 14. Maximum avalanche energy vs.

3 Test circuits

Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Table 9. TO-92 ammopack mechanical data

Figure 21. TO-92 ammopack drawing

5 Revision history

Table 10. Document revision history 09-Apr-2013 1 First release.