STQ-2016-3Z

STQ-2016-3 SIRENZA | Alldatasheet

Document overview

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Technical content

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microde vices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

1 EDS-104229 Rev B

The Sirenza Microdevices STQ-2016-3 is a direct quadrature modulator targeted for use in W-CDMA applications. This device features a 700-2500 MHz operating frequency band, excellent carrier and sideband suppression, and a low broad- band noise floor. The STQ-2016-3 uses silicon germanium (SiGe) device technology and delivers a typical channel power of -11 dBm with adjacent channel power less than -65 dBc. A digital input shut-down feature is included that, when enabled, attenuates the output by 60 dB. The device is packaged in an industry standard 16 pin TSSOP with exposed paddle for superb RF and thermal ground. The STQ-2016-3Z is pack- aged in a RoHs compliant and Green 16-pin TSSOP with matte tin finish. Functional Block Diagram Product Features

Applications

• Excellent carrier feedthrough, -40 dBm constant with output power
• +4.0 dBm output P1dB
• Wide baseband input, DC - 500 MHz
• Superb phase accuracy and amplitude balance, ±0.5 deg./±0.2 dB
• Very low noise floor, -157 dBm/Hz
• Low ACP, -65 dBc
• W-CDMA Transmitters Product Description 16 pin TSSOP with Exposed Ground Pad Package Footprint: 0.197 x 0.252 inches, (5.0 x 6.4 mm) Package Height: 0.039 inches (1.0 mm) BBQN RFP RFN BBIN BBQP LOP LON BBIP LO QUADRATURE GENERATOR VCC VEE VEE VCCSD VEE VEE VCC Product Specifications – W-CDMA Modulation (See Table 1 for Test Conditions) 869-894 MHz 1930-1990 MHz 2110-2170 MHz Channel Power Guaranteed through Output Power test as specified on Page 2 Power Flatness Range across fre- Adjacent Channel Power Guaranteed through IM3 test as specified on Page 2 dBc -65 -63 -65 -63 -65 -63 E First Alternate Channel Power dBc -75 -68 -73 -68 -73 -68 C,D Second Alternate Channel Power dBc -75 -68 -73 -68 -73 -68 C,D Broadband Noise Floor 60 MHz offset from carrier dBm/Hz -157 -156 -157 -156 -156 -155 C,D Signal-to-Noise Ratio Noise Offset: 60 MHz, Measured in a 3.84 MHz bandwidth dB 79 81 77 79 76 78 C,D *Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature and Vcc, D = Design parameter, E = 100% tested through correlated CW parameter, I = Device input specification. STQ-2016-3 Pb RoHS Compliant & Packag eGreenSTQ-2016-3Z 700-2500 MHz Direct Quadrature Modulator

303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

2 EDS-104229 Rev B

STQ-2016-3 Direct Quadrature Modulator Product Specifications – RF Output, CW Modulation (See Table 2 for Test Conditions) 700-1000 MHz 1700-2500 MHz RF Frequency Range MHz 700 1000 1700 2500 A Output Power dBm -13 -10.5 -9.0 -13 -11.5 -9 A,C RF Port Return Loss Matched to 50Ω (refer to schematics on pages 14 and 15) dB 20 16 D Output P1dB (I/Q inputs = 3.74 Vp-p differential typical) dBm +3.0 +4.0 0 +3.0 A,C Carrier Feedthrough dBm -40 -34 -40 -32 A,C Sideband Suppression dB 34 40 34 40 A,C IM3 Suppression Two-tone baseband input @ 1.2Vp-p differ- ential per tone dB 46 50 47 53 A,C Quadrature Phase Error Deg. -2 ±0.5 +2 -2 ±0.5 +2 D Supply Voltage (Vcc) V +4.75 +5 +5.25 +4.75 +5 +5.25 I Supply Current mA 60 73 86 60 73 86 A Device Thermal Resistance Junction-Case ºC/W 25 25 D Product Specifications – Parameter Variation, W-CDMA Modulation (See Table 1 for Test Conditions) Vcc (V) Temp. (Deg. C) Parameters Comments Unit 4.75 5.0 5.25 -40 +25 +85 Type* Channel Power dBm -13.05 -13 -12.95 -12.15 -13 -13.50 C,D Adjacent Channel Power dBc -64.3 -65 -65.4 -64.95 -65 -65.25 C,D First Alternate Channel Power dBc -72.9 -73 -72.9 -75.1 -73 -72.9 C,D Second Alternate Channel Power dBc -73.25 -73 -72.9 -75.4 -73 -72.5 C,D Broadband Noise Floor 60 MHz offset from carrier dBm/Hz -156.3 -156 -155.95 -156.25 -156 -155.4 C,D Signal-to-Noise Ratio Noise Offset: 60 MHz, Measured in a 3.84 MHz bandwidth dB 77.8 78 77.8 79 78 77 C,D *Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature and Vcc, D = Design parameter, E = 100% tested through correlated CW parameter, I = Device input specification. Product Specifications – Parameter Variation, W-CDMA Modulation (See Table 1 for Test Conditions) LO Drive (dBm) I/Q Drive (Vpp, Diff.**) Parameters Comments Unit -1 +3 +7 1.0 1.7 2.5 Type* Channel Power dBm -13.05 -13 -12.95 -16.7 -13 -10.2 C,D Adjacent Channel Power dBc -65.75 -65 -64.5 -68.7 -65 -58.6 C,D First Alternate Channel Power dBc -72.3 -73 -73.1 -68.3 -73 -74.7 C,D Second Alternate Channel Power dBc -72.3 -73 -73.05 -67.3 -73 -73.7 C,D Broadband Noise Floor 60 MHz offset from carrier dBm/Hz -155.25 -156 -156.4 -156.7 -156 -155.2 C,D Signal-to-Noise Ratio Noise Offset: 60 MHz, Measured in a 3.84 MHz bandwidth dB 77.5 78 78.3 75 78 80 C,D

303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

3 EDS-104229 Rev B

STQ-2016-3 Direct Quadrature Modulator 0 100 200 300 400 500 600 700 8001.5 0.5 0.5 1.5 Sa mples I Vp Vpp Vpp Diff, 2V p p⋅ Plot of Single-Ended W-CDMA Baseband Signal (BBIP) **Peak-to-Peak Differential (Vpp, Diff.) Baseband Voltage Definition: Product Specifications – Baseband Modulation Input Parameters Additional Test Conditions/Comments Unit Min. Typ. Max. Type* Baseband Frequency Input -3dB bandwidth, baseband inputs termi- nated in 50 ohms MHz DC 500 I Baseband Input Resistance per pin kohms 4.4 D Baseband Input Capacitance per pin pF 0.5 D Product Specifications – Shut-Down Input (Pin 7) Parameters Additional Test Conditions/Comments Unit Min. Typ. Max. Type* Shut-Down Current mA 42 60 A Shut-Down Attenuation dB 60 D Shut-Down Pin Resistance @ 1MHz kohm 11.9 D Shut-Down Pin Capacitance @ 1MHz pF 5.2 D Shut-down Control Voltage Thresholds Shut-down disabled (normal operation) V 3.75 Vcc I Shut-down enabled V 0.0 1.5 I Shut-Down Settling Time ns <450 D *Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature and Vcc, D = Design parameter, E = 100 % tested through correlated CW parameter, I = Device input specification. Product Specifications – LO Input Parameters Additional Test Conditions/Comments Unit Min. Typ. Max. Type* LO Frequency MHz 700 2500 I LO Drive Level Recommended/Optimum Levels dBm -1 +3 +7 I LO Port Return Loss matched to 50Ω (see schematic on page 12) dB 16 D

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Table 2. CW Test Conditions Table 1. W-CDMA Test Conditions

2 VCC Positive supply (+5V)

3 VEE Ground

4 LOP Local oscillator input, positive terminal Nominal DC voltage is 2.0V. Input should be AC-coupled. 5 LON Local oscillator input, negative terminal Nomina l DC voltage is 2.0V. Input should be AC-coupled.

6 VEE Ground

7 SD Shut-down control Logic high = normal operation;

Logic Low = shut-down enabled.

10 VCC Positive supply (+5V)

11 VEE Ground

12 RFN RF output, negative terminal Nominal DC voltage is 2.4V. Output should be AC-coupled. 13 RFP RF output, positive terminal Nominal DC volt age is 2.4V. Output should be AC-coupled.

14 VEE Ground

15 VCC Positive supply (+5V)

ating values specified in the table on page one. and testing devices must be observed.

5 EDS-104229 Rev B

Figure 5. Broadband Noise Floor (60 MHz Offset) Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. Figure 6. Broadband Noise Floor (60 MHz Offset) Vs. I/Q Drive Level, over Temperature, LO Drive = +4.0 dBm @ 2140 MHz. Figure 3. Broadband Noise Floor (60 MHz Offset) Vs. Figure 4. Broadband Noise Floor (60 MHz Offset) Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz. Figure 2. Broadband Noise Floor (60 MHz Offset) Vs. I/Q Drive Level, LO Frequency = 2140 MHz. Figure 1. Broadband Noise Floor (60 MHz Offset) Vs. LO Drive Level, LO Frequency = 2140 MHz.

6 EDS-104229 Rev B

Figure 7. Signal-to-Noise Ratio Vs. LO Drive Level, LO Figure 8. Signal-to-Noise Ratio Vs. I/Q Drive Level, LO Figure 9. Signal-to-Noise Ratio Vs. Vcc, LO Drive = +4.0 Figure 10. Signal-to-Noise Ratio Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz. Figure 11. Signal-to-Noise Ratio Vs. Temperature, LO Figure 12. Signal-to-Noise Ratio Vs. I/Q Drive Level, over Temperature, LO Drive = +4.0 dBm @ 2140 MHz.

7 EDS-104229 Rev B

Figure 13. Channel Power Vs. LO Drive Level, LO Frequency = 2140 MHz. Figure 14. Channel Power Vs. I/Q Drive Level, LO Frequency = 2140 MHz. Figure 15. Channel Power Vs. LO Frequency, LO Drive = +4.0 dBm. Figure 16. Channel Power Vs. I/Q Drive Level, over LO Frequency Range,LO Drive = +4.0 dBm. Figure 17. Channel Power Vs. Vcc, LO Drive = +4.0 dBm @ Figure 18. Channel Power Vs. I/Q Drive Level, over Vcc Range,

8 EDS-104229 Rev B

Figure 19. Channel Power Vs. Temperature, LO Figure 20. Channel Power Vs. I/Q Drive Level, over Temperature Range, LO Drive = +4.0 dBm @ 2140 MHz. Figure 23. Adjacent Channel Power Vs. LO Frequency, LO Drive Figure 24. Adjacent Channel Power Vs. I/Q Drive Level, over LO Frequency Range, LO Drive = +4.0 dBm. Figure 21. Adjacent Channel Power Vs. LO Drive Level, LO Frequency = 2140 MHz. Figure 22. Adjacent Channel Power Vs. I/Q Drive Level, LO Frequency = 2140 MHz.

9 EDS-104229 Rev B

Figure 29. First Alternate Channel Power Vs. LO Drive Level, LO Figure 30. First Alternate Channel Power Vs. I/Q Drive Level, LO Figure 27. Adjacent Channel Power Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. Figure 28. Adjacent Channel Power Vs. I/Q Drive Level, over Temperature Range, LO Drive = +4.0 dBm @ 2140 MHz. Figure 25. Adjacent Channel Power Vs. Vcc, LO Figure 26. Adjacent Channel Power Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz.

10 EDS-104229 Rev B

Figure 35. First Alternate Channel Power Vs. Temperature, LO Figure 36. First Alternate Channel Power Vs. I/Q Drive Level, over Temperature Range, LO Drive = +4.0 dBm @ 2140 MHz. Figure 33. First Alternate Channel Power Vs. Vcc, Figure 34. First Alternate Channel Power Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz. Figure 31. First Alternate Channel Power Vs. LO Frequency, LO Drive = +4.0 dBm. Figure 32. First Alternate Channel Power Vs. I/Q Drive Level,

11 EDS-104229 Rev B

Figure 41. Second Alternate Channel Power Vs. Vcc, LO Drive = Figure 42. Second Alternate Channel Power Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz. Figure 39. Second Alternate Channel Power Vs. LO Frequency, LO Drive = +4.0 dBm. Figure 40. Second Alternate Channel Power Vs. I/Q Drive Figure 37. Second Alternate Channel Power Vs. LO Drive Level, LO Frequency = 2140 MHz. Figure 38. Second Alternate Channel Power Vs. I/Q Drive Level, LO Frequency = 2140 MHz.

12 EDS-104229 Rev B

Figure 43. Second Alternate Channel Power Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. Figure 44. Second Alternate Channel Power Vs. I/Q Drive Level, over Temperature Range, LO Drive = +4.0 dBm @ 2140 MHz. Figure 45. Channel Power Distribution, 4 Production Lots, Figure 46. Adjacent Channel Power Distribution, 4 Production Figure 47. First Alternate Channel Power Distribution, 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff. Figure 48. Second Alternate Channel Power Distribution, 4 Production Lots, 120 Units. LO Drive = +4.0 dBm @ 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff.

13 EDS-104229 Rev B

1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH
2. TOLERANCE ±.004" (0.1mm) UNLESS OTHERWISE
3. CONTROLLING DIMENSION IS MILLIMETER,
4. FOLLOWED FROM JEDEC MO-153.

Figure 49. Broadband Noise Floor (60 MHz Offset) Distribution, 4 Drive Level = 1.7 Vpp, Diff. Figure 50. Signal-to-Noise Ratio (60 MHz Offset) Distribution, 4 Drive Level = 1.7 Vpp, Diff.

303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

14 EDS-104229 Rev B

STQ-2016-3 Direct Quadrature Modulator 700 – 1000 MHz Application Schematic Bill of Materials (for 700 – 1000 MHz Evaluation Board P/N STQ-2016-3EVB-1) Component Designator Value Qty Vendor Part Number Description U1 1 SMDI STQ-2016 SiGe Direct Quadrature Modulator P8, P9, P10, P11, P12, P13 6 Johnson Components 142-0701-851 SMA connector, end launch with tab, for .062” thick board H1, H2 2 AMP 640453-2 2-pin header, right angle T3, T4 1:1 2 Panasonic EHF-FD1618 RF transformer, 700-1300MHz L1 1uH 1 Panasonic ELJ-FA1R0KF2 Inductor, 1210 footprint, ±10% tolerance R1, R7, R9, R10 200 ohm 4 Venkel CR1206-8W-2000T Resistor, 1206 footprint, ±1% tolerance R8 1 kohm 1 Venkel CR0603-16W-1001FT Resis tor, 0603 footprint, ±1% tolerance C6, C18 33pF 2 Venkel C0603COG500-330JNE Capacitor, 0603 footprint, COG dielectric, ±5% tolerance C9, C17 1nF 2 Venkel C0603COG500-102JNE Capacitor, 0603 footprint, COG dielectric, ±5% tolerance C3 2.2uF 1 Venkel C1206Y5V160-225ZNE Capacitor, 1206 footprint, Y5V dielectric, 16V rating C4, C5, C10, C16 10pF 4 Venkel C0603COG500-100JNE Capacitor, 0603 f ootprint, COG dielectric, ±5% tolerance SH1 1 3M 929950-00 Shunt for 2-pin header STQ-2016 R8 R9 R10 P12 P13 BBIP BBIN BBQP BBQN R1 R7 P8 P9 VCC VCC C6 C9 C10 C18 VCC C17 VCC P10 LOin P11 RFout VCC VCC H2 RFP RFN LOP LON SD VEE VEE VCC VCC VEE VEE VCC SH1 Connect backside exposed paddle to RF/DC ground. BBIP BBIN BBQP BBQN Shut-down 2.0" (50.8mm) P8 P9 P11 P12 P13 R9 R10 C9C6 C18 C10 C16C17 SH1 2.0" (50.8mm) T3 T4 BBQP BBQN BBIP BBIN Shutdown GND LO In RF Out VCC Fully Assembled PCB Note: Remove SH1 to enable modulated output.

303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

15 EDS-104229 Rev B

STQ-2016-3 Direct Quadrature Modulator 1.7 – 2.5 GHz Application Schematic STQ-2016 R8 R9 R1 P12 P13 BBIP BBIN BBQP BBQN R1 R7 P8 P9 VCC VCC C6 C9 C10 C16 C18 VCC C17 VCC P10 LOin P11 RFout VCC VCC H2 RFP RFN LOP LON SD VEE VEE VCC VCC VEE VEE VCC SH1 Connect backside exposed paddle to RF/DC ground. BBIP BBIN BBQP BBQN Shut-down 2.0" (50.8mm) P8 P9 P10 P11 P12 P13 R9 R10 C9C6 C18 C10 C16C17 SH1 2.0" (50.8mm) T3 T4 C2 BBQP BBQN BBIP BBIN Shutdown GND LO In RF Out VCC Fully Assembled PCB Note: Remove SH1 to enable modulated output. Bill of Materials (for 1.7 – 2.5 GHz Evaluation Board P/N STQ-2016-3EVB-2) Component Designator Value Qty Vendor Part Number Description U1 1 SMDI STQ-2016 SiGe Direct Quadrature Modulator P8, P9, P10, P11, P12, P13 6 Johnson Components 142-0701-851 SMA connector, end launch with tab, for .062” thick board H1, H2 2 AMP 640453-2 2-pin header, right angle T3, T4 1:1 2 Panasonic EHF-FD1619 RF transformer, 1200-2200MHz L1 1uH 1 Panasonic ELJ-FA1R0KF2 Inductor, 1210 footprint, ±10% tolerance R1, R7, R9, R10 200 ohm 4 Venkel CR1206-8W-2000T Resistor, 1206 footprint, ±1% tolerance R8 1 kohm 1 Venkel CR0603-16W-1001FT Resis tor, 0603 footprint, ±1% tolerance C1, C2 0.5pF 2 Venkel C0603COG500-0R5CNE Capacitor, 0603 footprint ±0.25pF tolerance C6, C18 6.8pF 2 Venkel C0603COG500-6R8CNE Capacitor, 0603 footprint, COG dielectric, ±0.25pF tol. C9, C17 1nF 2 Venkel C0603COG500-102JNE Capacitor, 0603 footprint, COG dielectric, ±5% tolerance C3 2.2uF 1 Venkel C1206Y5V160-225ZNE Capacitor, 1206 footprint, Y5V dielectric, 16V rating C4, C5, C10, C16 2.2pF 4 Venkel C0603COG500-2R2CNE Capacitor, 0603 footprint, COG dielectric, ±0.25pF toler- ance SH1 1 3M 929950-00 Shunt for 2-pin header

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Figure 51. Measurement System for Modulation Performance Tests: Channel Power, Adjacent Channel Power, First Alternate Channel Power, Second Alternate Channel Power, and Broadband Noise Floor. Figure 52. Measurement System for Continuous Wave Performance Tests: Output Power, P1dB, Carrier Feedthrough, Sideband Suppresion, and IM3 Suppression.