STPS10L60D

STPS10L60D STMICROELECTRONICS | Alldatasheet

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July 2003 - Ed: 4B POWER SCHOTTKY RECTIFIER Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AC,TO-220FPAC this device is intended for use in DC/DC chargers.

DESCRIPTION

n LOW FORWARD VOLTAGE DROP n NEGLIGIBLE SWITCHING LOSSES n LOW THERMAL RESISTANCE n AVALANCHE CAPABILITY SPECIFIED FEATURES AND BENEFITS Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) RMS forward current 30 A IF(AV) Average forward current TO-220AC Tc = 140°C δ = 0.5 10 A TO-220FPAC Tc = 120°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 220 A IRRM Repetitive peak reverse current t p=2µ s square F=1kHz 1A PARM Repetitive peak avalanche power tp = 1µs Tj = 25°C 5800 W Tstg Storage temperature range -6 5 t o+1 7 5°C Tj Maximum operating junction temperature * 150 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs ABSOLUTE RATINGS (limiting values) IF(AV) 10 A VRRM 60 V Tj (max) 150°C VF (max) 0.56 V MAIN PRODUCT CHARACTERISTICS K A TO-220AC STPS10L60D *: dPtot dTj Rth j a thermal runaway condition for a diode on its own heatsink K A TO-220FPAC STPS10L60FP

Symbol Parameter Tests conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25°C V R =V RRM 350 µA Tj = 125°C 65 95 mA VF * Forward voltage drop Tj = 25°CI F =1 0 A 0.6 V Tj = 125°C I F =1 0 A 0.48 0.56 T j=2 5°CI F =2 0 A 0.74 Tj = 125°C I F =2 0 A 0.62 0.7 Pulse test : * tp = 380 µs,δ <2 % To evaluate the conduction losses use the following equation : P=0 . 4 2xIF(AV) + 0.014 IF2(RMS) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Value Unit R th(j-c) Junction to case TO-220AC 1.6 °C/W TO-220FPAC 4 THERMAL RESISTANCES 0123456789 1 0 1 1 1 20 PF(av)(W) IF(av) (A) T δ=tp/T tp δ = 1 δ = 0.05 Fig. 1: Average forward power dissipation versus average forward current. 0 25 50 75 100 125 1500 Tamb(°C) IF(av)(A) Rth(j-a)=15°C/W Rth(j-a)=Rth(j-c) TO-220AC TO-220FPAC T δ=tp/T tp Fig. 2: Average forward current versus ambient temperature(δ = 0.5). 0.2 0.4 0.6 0.8 1.2 0 25 50 75 100 125 150 T (°C)j P( t ) P (25°C) ARM p ARM Fig. 4:Normalized avalanche power derating versus junction temperature. 0.001 0.01 0.10.01 1 0.1 10 100 1000 t (µs)p P( t ) P (1µs) ARM p ARM Fig. 3:Normalized avalanche power derating versus pulse duration.

0 5 10 15 20 25 30 35 40 45 50 55 601E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 IR(mA) VR(V) Tc=25°C Tc=75°C Tc=100°C Tc=125°C Tc=150°C Tc=50°C Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). 1 10 1000.1 0.2 0.5 1.0 2.0 C(nF) VR(V) F=1MHz Tj=25°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). 1E-4 1E-3 1E-2 1E-1 1E+00.0 0.2 0.4 0.6 0.8 1.0 Zth(j-c)/Rth(j-c) tp(s) T δ=tp/T tp δ = 0.5 δ = 0.2 δ = 0.1 Single pulse Fig. 6-1:Relative variation of thermal impedance junction to lead versus pulse duration (TO-220AC). 1E-3 1E-2 1E-1 1E+0 1E+10.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) T δ=tp/T tp δ = 0.5 δ = 0.2 δ = 0.1 Single pulse Fig. 6-2:Relative variation of thermal impedance junction to lead versus pulse duration (TO-220FPAC). 1E-3 1E-2 1E-1 1E+00 100 120 140 160 180 200 IM(A) t(s) Tc=25°C Tc=125°C Tc=75°C IM t δ=0.5 Fig. 5-1:Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220AC). 1E-3 1E-2 1E-1 1E+00 100 120 t(s) IM(A) Tc=25°C Tc=100°C Tc=75°C IM t δ=0.5 Fig. 5-2:Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220FPAC).

REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 H G F D E A B Dia 1.0 10.0 100.0 IFM(A) VFM(V) Tj=25°C Tj=125°C Tj=150°C (typical values) Fig. 9: Forward voltage drop versus forward current (low level, maximum values).

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com PACKAGE MECHANICAL DATA TO-220AC A C D E M Ø I G F REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ. Ordering type Marking Package Weight Base qty Delivery mode STPS10L60D STPS10L60D TO-220AC 1.86g 50 Tube STPS10L60FP STPS10L60FP TO-220FPAC 1.9g 50 Tube n EPOXY MEETS UL94,V0 n COOLING METHOD : C n RECOMMENDED TORQUE VALUE : 0.8M.N n MAXIMUM TORQUE VALUE : 1.0M.N