STPS10L40CT STMICROELECTRONICS | Alldatasheet
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July 1999 - Ed: 4A LOW DROP POWER SCHOTTKY RECTIFIER Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters. D 2PAK, these devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarityprotectionapplications.
DESCRIPTION
LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER AVALANCHERATED FEATURES AND BENEFITS Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 40 V IF(RMS) RMS forward current 20 A IF(AV) Average forward current Tc = 135 °C δ = 0.5 Per diode Per device A IFSM Surge non repetitiveforward current tp = 10 ms Sinusoidal 150 A IRRM Repetitive peak reverse current tp=2 µs squareF=1kHz 1A IRSM Non repetitive peak reverse current tp = 100µs square 2A Tstg Storage temperaturerange - 65 to + 150 °C Tj Maximum operating junction temperature * 150 °C dV/dt Critical rate of rise of reverse voltage 10000 V/ µs ABSOLUTE RATINGS (limiting values, per diode) K IF(AV) 2x5 A VRRM 40 V Tj (max) 150 °C VF (max) 0.46 V MAIN PRODUCTS CHARACTERISTICS D2PAK STPS10L40CG A1 K K KA1 TO-220AB STPS10L40CT ISOWATT220AB STPS10L40CF *: dPtot dTj < 1 Rth(j−a) thermal runaway condition for a diode on its own heatsink
Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25°CV R =V RRM 0.2 mA Tj = 100°C 82 5m A VF * Forward voltage drop Tj = 25°CI F =5 A 0.53 V Tj = 125°CI F =5 A 0.36 0.46 Tj = 25°CI F =1 0 A 0.67 Tj = 125°CI F =1 0 A 0.49 0.59 Pulse test : * tp= 380µs,δ <2 % To evaluatethe conductionlosses use the following equation : P = 0.33 x IF(AV) + 0.026 IF2(RMS) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Value Unit R th (j-c) Junction to case TO-220AB D2PAK Per diode Total 1.7 °C/W Rth(c) Coupling 0.35 R th (j-c) Junction to case ISOWATT220AB Per diode Total 3.8 °C/W Rth(c) Coupling 2.5 THERMAL RESISTANCES When the diodes 1 and 2 are used simultaneously : Δ Tj(diode1) = P(diode1)x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IF(av) (A) PF(av)(W) δ = 0.2 δ = 0.5 δ =1 δ = 0.05 δ = 0.1 T δ=tp/T tp Fig. 1:Average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 1500 IF(av)(A) Rth(j-a)=15°C/W Rth(j-a)=Rth(j-c) Tamb( °C) T δ=tp/T tp Fig. 2:Average forward current versus ambient temperature (δ=0.5, per diode). STPS10L40CT/CG/CF
IM(A) Tc=25°C Tc=125°C Tc=75°C t(s) IM t δ=0.5 Fig. 3-1:Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB and D2PAK). 1E-3 1E-2 1E-1 1E+00.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) δ = 0.1 δ = 0.2 δ = 0.5 Single pulse T δ=tp/T tp Fig. 4-1:Relative variation of thermal impedance junction to case versus pulse duration. (TO-220AB and D2PAK). 0 5 10 15 20 25 30 35 401E-3 1E-2 1E-1 1E+0 1E+1 1E+2 IR(mA) Tj=100°C Tj=25°C Tj=150°C VR(V) Fig. 5:Reverse leakage current versus reverse voltage applied (typical values, per diode). 1E-3 1E-2 1E-1 1E+00 IM(A) Tc=25°C Tc=125°C Tc=75°C IM t δ=0.5 t(s) Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB). 1E-3 1E-2 1E-1 1E+0 1E+1 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) δ = 0.1 δ = 0.2 δ = 0.5 Single pulse T δ=tp/T tp Fig. 4-2:Relative variation of thermal impedance junction to case versus pulse duration. (ISOWATT220AB). 12 5 1 0 2 0 5 010 100 1000 VR(V) C(pF) F=1MHz Tj=25°C Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). STPS10L40CT/CG/CF
1.0 10.0 100.0 IFM(A) VFM(V) Tj=25°C Tj=150°C Typical values Tj=125°C Fig. 7:Forward voltage drop versus forward current (maximum values, per diode). PACKAGE MECHANICAL DATA TO-220AB A C D Dia F G E M REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.4 typ. 0.645 typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ. 0 4 8 12 16 20 24 28 32 36 400 S(Cu) (cm ) Rth(j-a) (°C/W) Fig. 8:Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit boardFR4, copperthickness: 35µm)(D2PAK). STPS10L40CT/CG/CF
A D R M C G L B E * FLAT ZONE NO LESSTHAN 2mm REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 R 0.40 typ. 0.016 typ. V2 0 ° 8° 0° 8° 8.90 3.70 1.30 5.08 16.90 10.30 FOOT PRINT DIMENSIONS (in millimeters) STPS10L40CT/CG/CF
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or otherrights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical component s in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com PACKAGE MECHANICAL DATA ISOWATT220AB REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106 D 2.50 2.75 0.098 0.108 E 0.40 0.70 0.016 0.028 F 0.75 1.00 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.40 2.70 0.094 0.106 H 10.00 10.40 0.394 0.409 L2 16.00 typ. 0.630 typ. L3 28.60 30.60 1.125 1.205 L4 9.80 10.60 0.386 0.417 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366 Diam 3.00 3.20 0.118 0.126 Ordering type Marking Package Weight Base qty Delivery mode STPS10L40CT STPS10L40CT TO-220AB 2.23g 50 Tube STPS10L40CG STPS10L40CG D 2PAK 1.48g 50 Tube STPS10L40CG-TR STPS10L40CG D 2PAK 1.48g 1000 Tape & reel STPS10L40CF STPS10L40CF ISOWATT220AB 2.08g 50 Tube Cooling method : by conduction (C) Recommended torque value : 0.55 N.m. Maximum torque value : 0.70 N.m. Epoxy meets UL94,V0 STPS10L40CT/CG/CF