STPS10L300CT SUNMATE | Alldatasheet
Document overview
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Technical content
LOW VF SCHOTTKY BARRIER RECTIFIERS STPS10L300CT TO-220AB Ø 3.84± 0.15 2.74 0.15 10.0± 0.2 15.25 0.3 1.3± 0.2 0.8± 0.2 2.54± 0.1 13.6 0.3 9.0 0.2 1.27± 0.10 4.5± 0.2 2.5± 0.2 0.38± 0.10 PIN1 PIN3 PIN2 PIN2 PIN 1 PIN 3 PIN 2 & (case) Leads: Polarity: Mounting torque: Terminals: Weight: as marked Solderable per mil-std-202, Method 208 5 in-lbs maximum Puretin plated TO-220AB 1.85 grams Circuit figure: Common cathode Mechanical Data Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction CURRENT: 10A VOLTAGE RANGE: 300V Feaures T A = 25/c176C unless otherwise specified Maximum Ratings RATINGS SYMBOL STPS10L300CT UNIT Maximum repeve reverse voltage V RRM 300 V Maximum RMS voltage V RMS 210 V Maximum average forward current per device I AV A per diode 5 Peak forward surge current,8.3ms single half sine-wave superimposed on rated load I FSM 150 A Typical thermal resistance per diode(Note 1) R θ-JC 2.0 ℃/W Operang juncon temperature range T J -55 to +125 Storage temperature range T STG -55 to +150 Maximum DC blocking voltage 300 Notes: 1. Thermal resistance from junction to case. V V DC 1 of 2 www.sunmate.tw
www.sunmate.tw 2 of 2 FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE CASE TEMPERATURE, ( C ) 0 20 40 60 80 100 120 140 160 180 FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT )A( ,TNERRUC EGRUS DRAWROF KAEP NUMBER OF CYCLES AT 60Hz 250 200 150 100 AVERAGE FORWARD CURRENT, (A) 1 5 10 20 50 100 T J =25 C° 8.3ms Single Half Sine Wave JEDEC method FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS )A( ,TNERRUC DRAWROF SUOENATNATSNI INSTANTANEOUS FORWARD VOLTAGE, (V) 0.1 100 T J =125 C° T J =25 C° FIG. 3 - TYPICAL REVERSE CHARACTERISTICS )Am( ,TNERRUC ESREVER SUOENATNATSNI PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 100 0 20 40 60 80 100 120 T J=2 5 C° .01 T J=125 C° T J=75 C° per diode .001 T A = 25/c176C unless otherwise specified
Electrical Characteristics
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Breakdown voltage per diode V BR I R =0.5mA 300 - - V Instantaneous forward voltage per diode V F V I F =5 A T J =25 º C - V I F = 5A T J =125 º C - Reverse current per diode I R V R =300V T J =25 º C - 50 uA T J =125 º C - mA 0.90 0.78 0.72