STPS10H100CT STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

STPS10H100CT/CG/CR/CFP® July 2003 - Ed: 3F HIGH VOLTAGE POWER SCHOTTKY RECTIFIER IF(AV) 2x5A VRRM 100 V Tj 175°C VF (max) 0.61 V MAIN PRODUCT CHARACTERISTICS n HIGH JUNCTION TEMPERATURE CAPABILITY FOR CONVERTERS LOCATED IN CONFINED ENVIRONMENT n LOW LEAKAGE CURRENT AT HIGH TEMPERATURE n LOW STATIC AND DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER n AVALANCHE CAPABILITY SPECIFIED FEATURES AND BENEFITS Schottky barrier rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters. Packaged in TO-220AB, TO-220FPAB, D 2PAK and I2PAK.

DESCRIPTION

K Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) RMS forward current 10 A IF(AV) Average forward currentδ = 0.5 TO-220AB D 2P A K/I2PAK Tc = 165°C per diode per device A TO-220FPAB Tc = 160°C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 180 A IRRM Repetitive peak reverse current t p=2µ s square F = 1kHz 1 A PARM Repetitive peak avalanche power tp = 1µs Tj = 25°C 7200 W Tstg Storage temperature range - 65 to + 175 °C Tj Maximum operating junction temperature * 175 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs ABSOLUTE RATINGS (limiting values, per diode) K K D 2PAK STPS10H100CG K K I2PAK STPS10H100CR *: dPtot dTj Rth j a thermal runaway condition for a diode on its own heatsink K TO-220FPAB STPS10H100CFP

Symbol Parameter Value Unit R th (j-c) Junction to case D2PAK / I2PAK TO-220AB Per diode 2.2 °C/W Total 1.3 R th (c) Coupling 0.3 R th (j-c) Junction to case TO-220FPAB Per diode 4.5 °C/W Total 3.5 R th (c) Coupling 2.5 When the diodes 1 and 2 are used simultaneously : Δ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCES Symbol Parameter Tests conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25°C V R =V RRM 3.5 µA Tj = 125°C 1.3 4.5 mA VF ** Forward voltage drop Tj = 25 °CI F = 5 A 0.73 V Tj = 125°C 0.57 0.61 T j=2 5°CI F = 10 A 0.85 Tj = 125°C 0.66 0.71 Pulse test : * tp=5m s ,δ <2 % To evaluate the maximum conduction losses use the following equation : P=0 . 5 1xIF(AV) +0 . 0 2xIF2(RMS) STATIC ELECTRICAL CHARACTERISTICS (per diode) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 PF(av)(W) IF(av) (A) T δ=tp/T tp δ = 0.2 δ = 0.5 δ = 1 δ = 0.05 δ = 0.1 Fig. 1:Average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 1750 Tamb(°C) IF(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=15°C/W D²PAK/I²PAK/TO-220AB TO-220FPAB Fig. 2:Average forward current versus ambient temperature (δ=0.5, per diode).

120 IM(A)

Tc=50°C Tc=75°C Tc=125°C t(s) IM t δ=0.5 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) 1E-3 1E-2 1E-1 1E+00.0 0.2 0.4 0.6 0.8 1.0 Zth(j-c)/Rth(j-c) tp(s) T δ=tp/T tp Single pulse δ = 0.1 δ = 0.2 δ = 0.5 Fig. 6-1:Relative variation of thermal impedance junction to case versus pulse duration (per diode). 1E-3 1E-2 1E-1 1E+00 t(s) IM(A) Tc=50°C Tc=75°C Tc=125°C IM t δ=0.5 Fig. 5-2:Non repetitive surge peak forward current versus overload duration (maximum values, per diode)(TO-220FPAB) 1E-3 1E-2 1E-1 1E+0 1E+10.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) T δ=tp/T tpSingle pulse δ = 0.1 δ = 0.2 δ = 0.5 Fig. 6-2:Relative variation of thermal impedance junction to case versus pulse duration (per diode).(TO-220FPAB) 0.2 0.4 0.6 0.8 1.2 0 25 50 75 100 125 150 T (°C)j P( t ) P (25°C) ARM p ARM Fig. 4:Normalized avalanche power derating versus junction temperature. 0.001 0.01 0.10.01 1 0.1 10 100 1000 t (µs)p P( t ) P (1µs) ARM p ARM Fig. 3:Normalized avalanche power derating ver- sus pulse duration.

1.0 10.0 100.0 IFM(A) Tj=125°C Typical values Tj=125°C Tj=25°C Tj=150°C Typical values VFM(V) Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). 0 2 4 6 8 1 01 21 41 61 82 00 Rth(j-a) (°C/W) S(Cu) (cm²) Fig. 10:Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm) 0 1 02 03 04 05 06 07 08 09 0 1 0 01E-2 1E-1 1E+0 1E+1 1E+2 1E+3 1E+4 IR(µA) Tj=125°C Tj=25°C Tj=150°C Tj=100°C VR(V) Fig. 7:Reverse leakage current versus reverse voltage applied (typical values, per diode). 1 2 5 10 20 50 10010 100 1000 C(pF) F=1MHz Tj=25°C VR(V) Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode).

A D R M C G L B E * FLAT ZONE NO LESS THAN 2mm REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 R 0.40 typ. 0.016 typ. V2 0° 8° 0° 8° FOOT PRINT in millimeters 8.90 3.70 1.30 5.08 16.90 10.30

e D L b E A c REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 b 0.70 0.93 0.028 0.037 b1 1.14 1.17 0.044 0.046 b2 1.14 1.17 0.044 0.046 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 E 10.0 10.4 0.394 0.409 L 13.1 13.6 0.516 0.535 L1 3.48 3.78 0.137 0.149 L2 1.27 1.40 0.050 0.055 PACKAGE MECHANICAL DATA TO-220FPAB H G F D E A B Dia REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com Ordering type Marking Package Weight Base qty Delivery mode STPS10H100CT STPS10H100CT TO-220AB 2.20g 50 Tube STPS10H100CFP STPS10H100CFP TO-220FPAB 2.0 g 50 Tube STPS10H100CG STPS10H100CG D 2PAK 1.48g 50 Tube STPS10H100CG-TR STPS10H100CG D 2PAK 1.48g 1000 Tape and reel STPS10H100CR STPS10H100CR I 2PAK 1.49g 50 Tube n Epoxy meets UL94,V0 PACKAGE MECHANICAL DATA TO-220AB A C D Dia F G E M REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.4 typ. 0.645 typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ. n Cooling method: C. n Recommended torque value: 0.55 m.N n Maximum torque value 0.70 m.N