STPS0520Z10K

STPS0520Z STMICROELECTRONICS | Alldatasheet

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STPS0520Z® January 2002 - Ed : 2B SCHOTTKY RECTIFIERS n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n EXTREMELY FAST SWITCHING FEATURES AND BENEFITS Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in SOD-123, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the small size of the package this device fits GSM and PCMCIA requirements.

DESCRIPTION

Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 20 V IF(RMS) RMS forward current 2 A IF(AV) Average forward current δ=0.5 Ta=25°C 0.5 A IFSM Surge non repetitive forward current tp=10ms sinusoidal 5.5 A dV/dt Critical rate of rise of reverse voltage 10000 V/ µs Tstg Storage temperature range - 65 to + 125 °C Tj Maximum operating junction temperature * 125 °C TL Maximum temperature for soldering during 10s 260 °C ABSOLUTE RATINGS (limiting values) *: dPtot dTj Rth j a thermal runaway condition for a diode on its own heatsink IF(AV) 0.5 A VRRM 20 V VF (max) 0.32 V MAIN PRODUCT CHARACTERISTICS

Symbol Parameter Tests conditions Value UnitSTPS0520Z typ. max. IR * Reverse leakage current Tj = 25°C V R =1 0V 6 0 µA Tj = 100°C 2.5 5 mA Tj = 25°C V R =V RRM 150 µA Tj = 100°C 4.3 8 mA VF ** Forward voltage drop Tj = 25°C I F = 0.1 A 0.3 V Tj = 100°C 0.18 0.22 Tj = 25°C I F = 0.5 A 0.385 Tj=100°C 0.29 0.32 Pulse test : * tp=5m s ,δ <2 % ** tp = 380µs,δ <2 % To evaluate the maximum conduction losses use the following equation : P=0 . 2 3xIF(AV) +0 . 1 8xIF2(RMS) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Value Unit R th (j-a)Junction to ambient 430 (*) 210 (**) °C/W (*) Mounted on epoxy board with recommended Pad Layout. (**) Mounted on epoxy board with 50mm2 copper area. THERMAL RESISTANCE

0.05 0.10 0.15 0.20 0.25 IF(av) (A) PF(av)(W) T δ=tp/T tp δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 Fig. 1:Average forward power dissipation versus average forward current 0 25 50 75 100 1250.0 0.1 0.2 0.3 0.4 0.5 0.6 Tamb(°C) IF(av)(A) T δ=tp/T tp Fig. 2:Average forward current versus ambient temperature (δ = 0.5) 1E-3 1E-2 1E-1 1E+00.0 0.5 1.0 1.5 2.0 2.5 3.0 t(s) IM(A) Ta=25°C Ta=50°C Ta=75°C IM t δ=0.5 Fig. 3:Non repetitive surge peak forward current versus overload duration (maximum values). 1E-3 1E-2 1E-1 1E+0 1E+1 1E+21E-3 1E-2 1E-1 1E+0 tp(s) Zth(j-a)/Rth(j-a) δ = 0.5 δ = 0.2 δ = 0.1 Single pulse T δ=tp/T tp Fig. 4:Relative variation of thermal impedance junction to ambient versus pulse duration (Epoxy printed circuit board FR4 with recommended pad layout). 0 2 4 6 8 1 01 21 41 61 82 01E-3 1E-2 1E-1 1E+0 1E+1 2E+1 VR(V) IR(mA) Tj=70°C Tj=25°C Tj=100°C Tj=125°C Fig. 5:Reverse leakage current versus reverse voltage applied (typical values). 0 25 50 75 100 1251E-1 1E+0 1E+1 1E+2 1E+3 Tj(°C) IR[Tj] / IR[Tj=25°C] VR=VRRM Fig. 6:Relative variation of reverse leakage cur- rent versus junction temperature (typical values).

VR(V) C(pF) F=1MHz Tj=25°C Fig. 7:Junction capacitance versus reverse volt- age applied (typical values). 0.1 0.2 0.3 0.4 0.5 VFM(V) IFM(A) Tj=25°CTj=100°C Tj=100°C Typical values Fig. 8-1:Forward voltage drop versus forward cur- rent (maximum values, low level) 1.0 5.0 VFM(V) IFM(A) Tj=25°C Tj=100°C Tj=100°C Typical values Fig. 8-2:Forward voltage drop versus forward cur- rent (maximum values, high level) 0 2 04 06 08 0 1 0 0100 150 200 250 300 350 S(mm²) Rth(j-a) (°C/W) P=0.25W Fig. 9:Variation of thermal resistance junction to ambient versus copper surface under each lead (Printed circuit board FR4, e(Cu) = 35µm).

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com PACKAGE MECHANICAL DATA SOD-123 H b D E A G c REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 1.45 0.057 A1 0 0.1 0 0.004 A2 0.85 1.35 0.033 0.053 b 0.55 Typ. 0.022 Typ. c 0.15 Typ. 0.039 Typ. D 2.55 2.85 0.1 0.112 E 1.4 1.7 0.055 0.067 G 0.25 0.01 H 3.55 3.95 0.14 0.156 Type Marking Package Weight Base qty Delivery mode STPS0520Z Z52 SOD-123 0.01g. 3000 Tape & reel STPS0520Z10K Z52 SOD-123 0.01 g 10000 Tape & reel n Epoxy meets UL94, V0. n Band indicates cathode. MARKING 4.45 0.65 0.97 2.51 0.97 FOOTPRINT (in millimeters)