STPR120

STPR120A STMICROELECTRONICS | Alldatasheet

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STPR120A® April 2000 - Ed: 3 HIGH EFFICIENCY FAST RECOVERY DIODE IF(AV) 1A VRRM 200 V trr(max) 35 ns MAIN PRODUCT CHARACTERISTICS /B6e VERY LOW SWITCHING LOSSES /B6e LOW FORWARD VOLTAGE DROP /B6e SURFACE MOUNT DEVICE /B6e FAST RECTIFIER EPITAXIAL DIODE FEATURES AND BENEFITS Single chip rectifier suited to Switched Mode Power Supplies and high frequency DC/DC con- verters. Packaged in SMA, this surface mount device is in- tended for use in low voltage, high frequency in- verters, free wheeling and polarity protection applications.

DESCRIPTION

Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 200 V IF(RMS) RMS forward current 8 A IF(AV) Average forward current T Lead = 125°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 30 A Tstg Storage temperature range - 65 to + 150 °C Tj Maximum junction temperature 150 °C ABSOLUTE RATINGS (limiting values) SMA Symbol Parameter Value Unit R th (j-l) Junction to lead 30 °C/W THERMAL RESISTANCES

Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25°C V R =V RRM 3 µA Tj = 125°C 180 400 VF ** Forward voltage drop Tj = 25°C I F = 1 A 0.94 V Tj = 150°C I F = 1 A 0.69 0.74 STATIC ELECTRICAL CHARACTERISTICS Pulse test : * tp = 5ms,δ <2 % ** tp = 380µs,δ <2 % Symbol Tests Conditions Min. Typ. Max. Unit trr Tj = 25°C I F = 0.50 A I rr= 0.25 A IR =1A 25 ns IF =1A d I F/ d t=5 0A /µs VR =V RRM 25 35 tFR Tj = 25°C I F =1 A d I F/dt = 100 A/µs Measured at 1 V VFP Tj = 25°C I F =1 A d I F/dt = 100 A/µs5 V RECOVERY CHARACTERISTICS To evaluate the maximum conduction losses use the following equation : P=0 . 6 2xIF(AV) +0 . 1 2xIF2(RMS)

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IF(av) (A) PF(av)(W) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 Fig. 1:Average forward power dissipation versus average forward current. IM(A) P=1.5W P=1.0W P=0.5W P=0.25W δ Fig. 2:Peak current versus form factor. 0 25 50 75 100 125 1500.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Tamb(°C) IF(av)(A) Rth(j-a)=120°C/W Rth(j-a)=Rth(j-l) Fig. 3:Average forward current versus ambient temperature (δ=0.5). 1E-3 1E-2 1E-1 1E+00 t(s) IM(A) Ta=25°C Ta=125°C Ta=100°C Fig. 4:Non repetitive surge peak forward current versus overload duration. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+21 100 200 tp(s) Zth(j-a)(°C/W) Single pulse Fig. 5:Variation of thermal impedance junction to ambient versus pulse duration (Recommended pad layout, epoxy FR4, e(Cu)=35µm). 0.10 1.00 10.00 50.00 VFM(V) IFM(A) Tj=150°C Tj=25°C Fig. 6:Forward voltage drop versus forward cur- rent (maximum values).

VR(V) C(pF) F=1MHz Tj=25°C Fig. 7:Junction capacitance versus reverse voltage applied (typical values). 10 20 50 100 200 50010 100 200 dIF/dt(A/µs) QRR(nC) IF=2A 90% confidence Tj=125°C Fig. 8:Recovery charges versus dIF/dt 10 20 50 100 200 5000.1 1.0 10.0 20.0 dIF/dt(A/µs) IRM(A) IF=2A 90% confidence Tj=125°C Fig. 9:Peak reverse recovery current versus dIF/dt. 0 25 50 75 100 125 1500.25 0.50 0.75 1.00 1.25 Tj(°C) QRR; IRM[Tj] / QRR; IRM[Tj=125°C] IRM QRR Fig. 10:Dynamic parameters versus junction tem- perature.

E C L D b REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A1 1.90 2.70 0.075 0.106 A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.41 0.006 0.016 E 4.80 5.60 0.189 0.220 E1 3.95 4.60 0.156 0.181 D 2.25 2.95 0.089 0.116 L 0.75 1.60 0.030 0.063 /B6e Marking : R12 /B6e Cathode band is inked /B6e Epoxy meets UL94-V0 /B6e Weight: 0.06g PACKAGE MECHANICAL DATA SMA 2.40 1.65 1.45 1.45 FOOT PRINT (in millimeters) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com