STPR1020CB STMICROELECTRONICS | Alldatasheet
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STPR1020CB(-TR) PRELIMINARY DATASHEET February 1999 - Ed : 2B HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES IF(AV) 2 x 5 A VRRM 200 V trr (max) 35 ns MAIN PRODUCT CHARACTERISTICS SUITED FOR SMPS AND DRIVES SURFACE MOUNT VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY SURFACE MOUNT DEVICE TAPE AND REEL OPTION : -TR FEATURES AND BENEFITS Dual rectifier suited for Switch Mode and high fre- quency converters. Packaged in DPAK, this surface mount device is intended for use in low voltage, high frequency in- verters, free wheeling and polarity protection appli- cations. DESCRIPTION DPAK (Plastic) 2 3 Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 200 V VRSM Non Repetitive Surge Reverse Voltage 220 V IF(RMS) RMS Forward Current Per diode 10 A IF(AV) Average Forward Current Tcase = 130°C δ = 0.5 Per diode Per device A IFSM Surge Non Repetitive Forward Current tp = 10 ms Sinusoidal Per diode 70 A Tstg Storage Temperature Range - 40 to + 150 °C Tj Max. Junction Temperature 150 °C ABSOLUTE MAXIMUM RATINGS 2, 4(T A B )31
Symbol Parameter Value Unit R th (j-c) Junction to Case Thermal Resistance Per diode 5 °C/W Total 2.7 R th (c) Coupling °C/W When the diodes 1 and 2 are used simultaneously : Δ Tj(diode 1) = P(diode) x Rth (per diode) + P(diode 2) x Rth (c) THERMAL RESISTANCES Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage Current Tj = 25°CV R = VRRM 20 µA Tj = 100°C0 . 1 5 0 . 5 m A VF ** Forward Voltage drop Tj = 25 °CI F = 10 A 1.25 V Tj = 100°CI F = 5 A 0.8 0.85 STATIC ELECTRICAL CHARACTERISTICS (per diode) Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2% To evaluate the maximum conduction losses use the following equation : P = 0.7 x IF(AV) + 0.030 IF (RMS) Symbol Test Conditions Min. Typ. Max. Unit trr Tj = 25°C I F = 1A VF = 30V dIF/dt = -50 Α /ms 35 ns tfr Tj = 25°C I F = 1A VFR = 1.1 x VF tr = 10 ns 20 ns VFP Tj = 25°C I F = 1A tr = 10 ns 5 V RECOVERY CHARACTERISTICS STPR1020CB(-TR)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com PACKAGE MECHANICAL DATA DPAK REF. DIMENSIONS Millimeters Inches A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 0.80 0.031 L4 0.60 1.00 0.023 0.039 V2 0° 8° 0° 8° FOOT PRINT in millimeters 6.7 6.7 6.7 1.61.6 2.32.3 STPR1020CB(-TR)