STP9NM60

STP9NM60 STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh™Power MOSFET I TYPICAL R DS (on) = 0.55Ω I HIGH dv/dt AND AVALANCHE CAPABILITIES I IMPROVED ESD CAPABILITY I LOW INPUT CAPACITANCE AND GATE CHARGE I LOW GATE INPUT RESISTANCE I TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies.

ORDERING INFORMATION

TYPE V DSS R DS(on) ID Pw STP9NM60 STD9NM60 STD9NM60-1 600 V 600 V 600 V <0 . 6 0Ω <0 . 6 0Ω <0 . 6 0Ω 8.3 A 8.3 A 8.3 A 100 W 100 W 100 W SALES TYPE MARKING PACKAGE PACKAGING STP9NM60 P9NM60 TO-220 TUBE STD9NM60T4 D9NM60 DPAK TAPE & REEL STD9NM60-1 D9NM60 IPAK TUBE TO-220 IPAK DPAK INTERNAL SCHEMATIC DIAGRAM

STP9NM60 / STD9NM60 / STD9NM60-1 ABSOLUTE MAXIMUM RATINGS (/circle6 ) Pulse width limited by safe operating area (1) ISD ≤7A, di/dt≤400 µA, VDD ≤ V(BR)DSS ,Tj≤ TJMAX. THERMAL DATA AVALANCHE CHARACTERISTICS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0 ) 600 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 600 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at TC =2 5°C 8.3 A ID Drain Current (continuous) at TC = 100°C 5.2 A IDM (/circle6 ) Drain Current (pulsed) 33.2 A PTOT Total Dissipation at TC =2 5°C 100 W Derating Factor 0.8 W/ °C dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns Tj Tstg Operating Junction Temperature Storage Temperature -65 to 150 °C TO-220 DPAK IPAK Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) 3.5 A EAS Single Pulse Avalanche Energy (starting Tj=2 5°C, ID =IAR ,VDD =5 0V ) TBD mJ

STP9NM60 / STD9NM60 / STD9NM60-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS =M a xR a t i n g VDS =M a xR a t i n g ,TC = 125°C µA µA IGSS Gate-body Leakage Current (VDS =0 ) VGS =±2 0 V ± 5 µ A VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250µA 345 V R DS(on) Static Drain-source On Resistance VGS =1 0 V ,ID = 3.5 A 0.55 0.60 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS =1 5V,ID =4 . 1A T B D S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V ,f=1M H z ,VGS = 0 580 160 pF pF pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =3 0 0V ,ID =4 . 1A R G =4 . 7Ω VGS =1 0V (Resistive Load see, Figure 3) TBD TBD ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =4 8 0V ,ID =8 . 3A , VGS =1 0V TBD TBD 30 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD =4 8 0V ,ID =8 . 3A , R G =4 . 7Ω, VGS = 10V (Inductive Load see, Figure 5) TBD TBD TBD ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) TBD TBD A A VSD (1) F o r w a r dO nV o l t a g eISD =8 . 3A ,VGS =0 TBD V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 8.3 A, di/dt = 100A/µs VDD =1 0 0V ,Tj=2 5°C (see test circuit, Figure 5) TBD TBD TBD ns µC A trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 8.3 A, di/dt = 100A/µs VDD =1 0 0V ,Tj=1 5 0°C (see test circuit, Figure 5) TBD TBD TBD ns µC A

STP9NM60 / STD9NM60 / STD9NM60-1 Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load

STP9NM60 / STD9NM60 / STD9NM60-1 DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

STP9NM60 / STD9NM60 / STD9NM60-1 DIM. mm inch A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0 o 8o 0o 0o P032P_B TO-252 (DPAK) MECHANICAL DATA

STP9NM60 / STD9NM60 / STD9NM60-1 DIM. mm inch A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A C H D LL2 1 3 = = B E G = = = = TO-251 (IPAK) MECHANICAL DATA 0068771-E

STP9NM60 / STD9NM60 / STD9NM60-1 TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* DPAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY 2500 2500 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 TAPE MECHANICAL DATA All dimensions are in millimetersAll dimensions are in millimeters

STP9NM60 / STD9NM60 / STD9NM60-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com