STB9NK60ZFD STMICROELECTRONICS | Alldatasheet

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N-CHANNEL 600V - 0.85 - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH™ MOSFET TARGET DATA STPONK60ZFD 600V }<0.95Q) 7A © STPONKGOZFDFP | 600V |<0.95Q) 7A STBONK60ZFD 600V }<0.95Q) 7A “ « TYPICAL Ros(on) = 0.85 Q Y « HIGH dv/dt CAPABILITY 2 4 2 » 100% AVALANCHE TESTED ' ‘ « GATE CHARGE MINIMIZED 10-220 TO-220FP « LOW INTRINSIC CAPACITANCES « VERY GOOD MANUFACTURING REPEATIBILITY 3 « FAST INTERNAL RECOVERY DIODE ‘ D?PAK

DESCRIPTION

The Fast SuperMESH™ series associates all ad- vantages of reduced on-resistance, zener gate pro- INTERNAL SCHEMATIC DIAGRAM tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series comple- YJ ments the “FDmesh™” Advanced Technology. APPLICATIONS Py « HID BALLAST « ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS seisove

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STPSNK60ZFD - STP9NK60ZFDFP - STBSNK60ZFD ABSOLUTE MAXIM Symbol Value [oa] TO-220 | D?PAK To220FF | | Drain-source Voltage (Vso = 0) ee [Voor [Drange otage (Raa = 2010) ee [Ves [Gate soucevetape Si SCCCCtCSC~iC CS [to [Drain Curent (conimesytTo=2rc | FT rr) A [ _[Dan Coren conimesiatTe= 10S [asi [Teu(el [Oran Care use) [= [—[oernaracer Ci Gate souce ESD HEM O=TOOpR Rete | ____—OSCSC~iCSC*” [awe (1) [Peak Die Recovery wotage sope | ____T20 | vhs | [Vso [Inston wisind Votape OC) es ee uy) Qperatng Junction Temperature 88 to 150 Tstg Storage Temperature (@) Pulse widin immed by safe operating area (1) so $7A, Gift <2004/ps, Voo s Viemjoss. Tj = Tumax (() Limited onty by maximum temperature allowed THERMAL DATA TO-220 D*PAK Thermal Resistance JuncboncaseWax [102 | 388 | “ow | Rthj-peb | Thermal Resistance Junction-pcb Max (When mounted on minimum Footprint) Thermal Resistance JunctonambientMax [___25__——S—~d | Tt Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS lar Avalanche Current, Repetitive or Not-Repetitive 7 (pulse width limited by T, max) Eas Single Pulse Avalanche Energy mJ (starting Tj = 25 °C. Ip = lar. Voo = 50 V) GATE-SOURCE ZENER DIODE [_ Symbot_[ Parameter | Test Conditions | win | Twp] Max | Unit] BVcs0 Gate-Source Breakdown Igs=+ 1mA (Open Drain) Vv Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

20 LSTA

STPSNK60ZFD - STPSNK60ZFDFP - STBSNK60ZFD ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF [ Symbol | Parameter [| __Test Conditions [| Min. Typ. [ Max. | Unit | Visrjose | Drain-source lp = mA, Ves = 0 Vv Breakdown Voltage lbes Zero Gate Voltage Vo = Max Rating pA Drain Current (Vee = 0) Vos = Max Rating, Tc = 125 °C pA Ieee Gate-body Leakage Vos =220V pA Current (Vos = 0) VearVenb= 5A [3 [am] as |v | Roaien) | Static Drain-source On Vos = 10V. Ip =3.5A Resistance DYNAMIC [ Symbol | __ Parameter [_TestConditions | Min. | Typ. [| Max | Unit | | entth — | Farmar Tansee [Vosstavo=38e esp ps] Cis Input Capacitance Vos = 25V, f= 1 MHz, Vos =0 pF Coss Output Capacitance pF Crs Reverse Transfer pF Capacitance Coss eq. (3) | Equivalent Output Vos = OV. Vos = OV to 480V 72 pF Capacitance SWITCHING ON | Symbot | Parameter [__—TestConditions | Min. | Typ. | Max. | Unit | tayon) Tum-on Delay Time Voo = 300 V, lp =3.5A 19 te Rise Time Re = 4.70 Vea = 10 V 7 (Resistive Load see, Figure 3) Q, Total Gate Charge Voo = 480V, In = 7A. 38 nc Qos Gate-Source Charge Vos = 10V 7 nc Qoq Gate-Drain Charge 21 nc SWITCHING OFF [_Symbot_[ Parameter | Test Conditions | win | Twp] Max | Unit] toro Turn-off Delay Time Voo = 300 V, Ip =3.5A & Fall Time Re = 4.70 Ves = 10 V (Resistive Load see, Figure 3) teivor Off-voltage Rise Time Voo = 480V, lo =7 A, t Fall Time Re = 4.70, Vea = 10V te Cross-over Time (Inductive Load see, Figure 5) SOURCE DRAIN DIODE [ Symbol [Parameter [___TestConditions | Min. | Typ. [| Max | Unit | leo Source-drain Current 7 Isom (2) | Source-drain Current (pulsed) 28 Vent) [FowardOnvetogs [ea =TAVas=0 [re fv ter Reverse Recovery Time lon = 7 A, di/at = 100A/ps 150 ns Qn Reverse Recovery Charge Vpoo = 30V, T = 150°C TBD yc laren Reverse Recovery Current (see test circuit, Figure 5) TBD A Note: 1. Pulsed Pulse duration = 300 ys, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Cons og 15 defined a5 2 constant equivalent capacitance giving the same charging time 35 Coss WNEN Vg Increases fom 0 to 60% Voss. ST 39

STPSNK60ZFD - STP9NK60ZFDFP - STBSNK60ZFD Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform UNCLAMPED INDUCTIVE WAVEFORMS: t Vieryoss Vo— Yo 2200 |s5 ‘0 uF ar Veo 'p low fo “ \\ ' 7 BS LJ 1/7 ‘ fe 4 Nee a sxxeero scoseso Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit Resistive Load Yoo iv 4m a [2200 | 33 I = tka uF pF Yop 4 —_ \\, le= Cons! ’ Vp =20V= Ves ‘ 1000 our. we e = 4 U I 42 4mo " IL po eee BL scan a _— Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times A AOA Pass FAST oy Tes L=10quH : 8 8 S 3 " so 0 ” G Out, 4 Ss some wo

STPSNK60ZFD - STP9NKG60ZFDFP - STBSNK60ZFD TO-220 MECHANICAL DATA a |e a pA ao cots te poe et toe Te a OO poe fae oor er po sas ss Toso TT ee poe fo oases a poe Tage te pet Tess ss ote a a = OO SS OC A ZS OD poe ss ssi pos Paso Ps sry tsa TE Se GO a OA pee Pars ses ter ts [af ze Tess Tote tte | oP & F i Y @ i KV] [He 120 B [} - [= 3 LJ ch Lo : > bq ia: orcxsy Ih ! | W e e b (x3) 1] POAO01S988_M (S7] 519

STPSNK60ZFD - STP9NK60ZFDFP - STBSNK60ZFD TO-220FP MECHANICAL DATA pom inch Po POA eo tet poe Tse ts poo soe ts PoE Tasco oer QO Port Pt oes oe Pore Pt oes oe Pos se ots oe a DG QO a a poe tts a LG pte Tee te oe as Pore oe 808 Pe ft et ee a as ad | i}? S Le) a u i D J" [| 6 = SS ° ~ at | ES je 123 [ri ad 4 wo

CCST PSNK6OZFD - STPINK60ZFDFP - STBSNK60ZFD a Se SC a a a A a A a a a OC a a OC a a a A a a a Oc a ee ats, eee WY 3 x & ~ — — —) We [east TES imsli i ~ STA 719

STP9NK60ZFD - STP9NK60ZFDFP - STB9NK60ZFD D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* a 0.75 4+0.1) ’ BASE QTY 7 50 ot g BULK QTY 12.20 —— 5.08 & 1000 cL = | C3160 % Tube length 532 (+0.5) 43.50 t-975—| au dimensions 2 Alldimensions are in millimeters 9.5(£0.2) are in millimeters TAPE AND REEL SHIPMENT (suffix "T4”)* REEL MECHANICAL DATA _ decom hoe “TF om. maa pa TA | MIN. [MAX. | MIN. [ MAX. | bo c c 4 (SB [+s] [ooo] | a / mr | [> [227 [ores] Zince sl ae ee Ee ~ width TAPE MECHANICAL DATA | BAseaTy | BULKaTY | a [000 | 000 ceca | F [114 | 11.6 [0.440 [0.456 | a ee ‘Oita ne J Ko | 48 | 5.0 [0.189 [0.107 | - oreavry | Po | 3a | 4a ores [oer | ise Bacon Feed | w_ | 237 | 24.3 [0.033 [0.066 | FEED ORECTION,. Benaing racks ar" sales type 'TA

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