STP9NK60ZD

STP9NK60ZD STMICROELECTRONICS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 12

Technical content

N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK SuperFREDMesh™ MOSFET I TYPICAL R DS (on) = 0.85Ω I VERY HIGH dv/dt CAPABILITY I 100% AVALANCHE TESTED I GATE CHARGE MINIMIZED I LOW INTRINSIC CAPACITANCES I FAST INTERNAL RECOVERY DIODE

DESCRIPTION

The SuperFREDMesh™ series associates all ad- vantages of reduced on-resistance, zener gate pro- tection and very high dv/dt capability with a Fast body-drain recovery diode. Such series comple- ments the “FDmesh™” Advanced Technology.

APPLICATIONS

I ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS

ORDERING INFORMATION

TYPE V DSS R DS(on) ID Pw STP9NK60ZD STF9NK60ZD STB9NK60ZD 600 V 600 V 600 V <0 . 9 5Ω <0 . 9 5Ω <0 . 9 5Ω 125 W 30 W 125 W SALES TYPE MARKING PACKAGE PACKAGING STP9NK60ZD P9NK60ZD TO-220 TUBE STF9NK60ZD F9NK60ZD TO-220FP TUBE STB9NK60ZDT4 B9NK60ZD D 2PAK TAPE & REEL TO-220 TO-220FP D 2PAK INTERNAL SCHEMATIC DIAGRAM

STP9NK60ZD - STF9NK60ZD - STB9NK60ZD ABSOLUTE MAXIMUM RATINGS (/circle6 ) Pulse width limited by safe operating area (1) ISD ≤7A, di/dt≤500A/µs, VDD ≤ V(BR)DSS ,Tj=2 5°C (*) Limited only by maximum temperature allowed THERMAL DATA AVALANCHE CHARACTERISTICS GATE-SOURCE ZENER DIODE PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Value Unit TO-220 / D2PAK TO-220FP VDS Drain-source Voltage (VGS =0 ) 600 V VDGR Drain-gate Voltage (RGS =2 0kΩ )6 0 0 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuos) at TC =2 5°C77 ( * ) A ID Drain Current (continuos) at TC =1 0 0°C4 . 34 . 3 ( * ) A IDM (/circle6 ) Drain Current (pulsed) 28 28 (*) A PTOT Total Dissipation at TC =2 5°C 125 30 W Derating Factor 1 0.24 W/ °C VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5KΩ) 4000 V dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 °C TO-220 D 2PAK TO-220FP Unit Rthj-pcb Thermal Resistance Junction-pcb Max (When mounted on minimum Footprint) 30 °C/W Rthj-case Thermal Resistance Junction-case Max 1 4.16 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) EAS Single Pulse Avalanche Energy (starting Tj=2 5°C, ID =IAR ,VDD =5 0V ) 235 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit BV GSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 30 V

STP9NK60ZD - STF9NK60ZD - STB9NK60ZD ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq.is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS . Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1 m A ,VGS =0 6 0 0 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS =M a xR a t i n g VDS = Max Rating, TC =1 2 5°C µA µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 100µA 2.5 3.5 4.5 V R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 3.5 A 0.85 0.95 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS =1 5V,ID =3 . 5A 5 . 3 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =2 5 V ,f=1M H z ,VGS =0 1 1 1 0 135 pF pF pF C oss eq.(3) Equivalent Output CapacitanceVGS =0 V ,VDS = 0V to 480V 72 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID =3 . 5A R G =4 . 7Ω VGS =1 0V (Resistive Load see, Figure 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID =7A , VGS = 10V 8.7 53 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID =3 . 5A R G =4 . 7Ω VGS =1 0V (Resistive Load see, Figure 3) ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 480V, ID =7A , R G =4 . 7Ω, VGS = 10V (Inductive Load see, Figure 5) ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) A A VSD (1) F o r w a r dO nV o l t a g eISD =7A ,V GS =0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 7 A, di/dt = 100A/µs VDD = 30V, Tj=2 5°C (see test circuit, Figure 5) 150 663 8.5 ns nC A trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7 A, di/dt = 100A/µs VDD = 30V, Tj=1 5 0°C (see test circuit, Figure 5) 194 935 9.6 ns nC A

STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D²PAK Thermal Impedance For TO-220/D²PAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics

STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Normalized On Resistance vs Temperature Capacitance VariationsGate Charge vs Gate-source Voltage Static Drain-source On ResistanceTransconductance Normalized Gate Threshold Voltage vs Temp.

STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Maximum Avalanche Energy vs Temperature Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics

STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load

STP9NK60ZD - STF9NK60ZD - STB9NK60ZD DIM. mm. inch A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA

STP9NK60ZD - STF9NK60ZD - STB9NK60ZD A B D E H G F 123F2 L4L5 DIM. mm. inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA

STP9NK60ZD - STF9NK60ZD - STB9NK60ZD DIM. mm. inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0 º 8º D 2PAK MECHANICAL DATA

STP9NK60ZD - STF9NK60ZD - STB9NK60ZD TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA

STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com