STP9NC60

STP9NC60 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL 600V - 0.6Ω - 9A TO-220/TO-220FP PowerMESH  ΙΙ MOSFET ν TYPICAL RDS(on) = 0.6Ω ν EXTREMELY HIGH dv/dt CAPABILITY ν 100% AVALANCHE TESTED ν NEW HIGH VOLTAGE BENCHMARK ν GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH  IIis the evolution of the first generation of MESH OVERLAY  . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.

APPLICATIONS

ν HIGH CURRENT, HIGH SPEED SWITCHING ν SWITH MODE POWER SUPPLIES (SMPS) ν DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER INTERNAL SCHEMATIC DIAGRAM February 2000 TO-220 TO-220FP ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP9NC60 STP9NC60FP V DS Drain-source Voltage (VGS = 0) 600 V V DGR Drain- gate Voltage (RGS =2 0k Ω ) 600 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =2 5 oC9 . 0 5 . 2 A ID Drain Current (continuous) at Tc = 100 oC5 . 7 3 . 3 A IDM (•) Drain Current (pulsed) 36 36 A P tot Total Dissipation at Tc =2 5 oC 125 40 W Derating Factor 1.0 0.32 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns V ISO Insulation Withstand Voltage (DC)  2000 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area ( 1)ISD ≤ 9A, di/dt≤ 200 A/µs, VDD ≤ V(BR)DSS ,T j≤ TJMAX TYPE V DSS R DS(on) ID STP9NC60 STP9NC60FP 600 V 600 V <0 . 7 5Ω <0 . 7 5Ω 9.0 A 5.2 A

R thj-case Thermal Resistance Junction-case Max 1.0 3.12 oC/W R thj-amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1 % ) E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =5 0V ) 850 mJ ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µ AV GS =0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS =M a xR a t i n g VDS = Max Rating T c = 125 oC µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) VGS = ± 30 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold VoltageVDS =V GS ID =2 5 0µ A 234V R DS(on) Static Drain-source On Resistance VGS = 10V I D =4A 0 . 6 0 . 7 5 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on)max VGS =1 0V 9.0 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance VDS >I D(on) xR DS(on)max ID =4A 1 0 S C is s C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 1400 196 pF pF pF STP9NC60/FP

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =3 0 0V I D =4 . 5A R G =4 . 7 Ω VGS =1 0V (Resistive Load, see fig. 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =4 8 0V ID =9 . 0A VGS =1 0V 4 4 10.5 19.5 62 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD =3 0 0V I D =4 . 5A R G =4 . 7 Ω VGS =1 0V (Resistive Load, see fig. 3) ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD =4 8 0V I D =9 . 0A R G =4 . 7 Ω V GS =1 0V (Inductive Load, see fig. 5) ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 9.0 A A V SD (∗)F o r w a r d O n V o l t a g e ISD =9A V GS =0 1 . 6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =9A d i / d t=1 0 0A / µ s VDD =1 0 0V T j = 150 oC (see test circuit, fig. 5) 610 5.4 ns µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for TO-220FP STP9NC60/FP

Thermal Impedance for TO-220 Output Characteristics Transconductance Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance STP9NC60/FP

Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature STP9NC60/FP

Fig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 2:Unclamped Inductive Waveform Fig. 4:Gate Charge test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times STP9NC60/FP

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.0 67 F2 1.14 1.70 0.044 0.0 67 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.1 06 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.1 16 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.2 60 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP9NC60/FP

DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.1 08 E 0.45 0.7 0.017 0.0 27 F 0.75 1 0.030 0.0 39 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.2 04 G1 2.4 2.7 0.094 0.1 06 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.3 66 Ø 3 3.2 0.118 0.126 A B D E H G F 123 TO-220FP MECHANICAL DATA STP9NC60/FP

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