STP90N6F6 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 13

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220 type A package information
  • 5 Revision history

Features

Order code VDS RDS(on) max. ID PTOT STP90N6F6 60 V 0.0063 Ω 90 A 136 W

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Applications

  • Switching applications

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packaging STP90N6F6 90N6F6 TO-220 Tube

1 Electrical ratings

Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 90 A ID Drain current (continuous) at TC= 100 °C 70 A IDM (1) Drain current (pulsed) 360 A PTOT Total dissipation at TC = 25 °C 136 W Tstg Storage temperature - 55 to 175 °C Tj Max. operating junction temperature 175 °C Notes: (1) Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 1.1 °C/W Rthj-amb Thermal resistance junction-ambient max. 62.5 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 45 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAV, VDD = 43 V) 152 mJ

2 Electrical characteristics

(TC = 25 °C unless otherwise specified). Table 5: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 µA 60 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 60 V 10 µA VGS = 0 V, VDS = 60 V, Tj = 125 °C 100 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID= 45 A 0.0057 0.0063 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 4295 - pF Coss Output capacitance - 292 - pF Crss Reverse transfer capacitance - 190 - pF Qg Total gate charge VDD = 30 V, ID = 90 A, VGS = 10 V (see Figure 14: "Gate charge test circuit") - 74.9 - nC Qgs Gate-source charge - 19 - nC Qgd Gate-drain charge - 18.3 - nC Rg Intrinsic gate resistance f = 1 MHz open drain - 2.2 - Ω Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 30 V, ID = 45 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Switching times test circuit for resistive load" and Figure 18: "Switching time waveform") - 22 - ns tr Rise time - 42 - ns td(off) Turn-off-delay time - 73 - ns tf Fall time - 16 - ns

Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on voltage VGS = 0 V, ISD = 90 A - 1.3 V trr Reverse recovery time ISD = 90 A, di/dt = 100 A/µs, VDD = 48 V, Tj = 25 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 49 ns Qrr Reverse recovery charge - 8.5 µC IRRM Reverse recovery current - 0.3 A Notes: (1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized gate threshold voltage vs. temperature Figure 7: Normalized V(BR)DSS vs. temperature V(BR)DSS TJ(°C) (norm) 0.8 0.85 0.9 0.95 1.05 1.1

1.15 ID=250µ A

-55 -5-30 7020 45 95 120 GIPG180320141610SA

3 Test circuits

Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform AM01469v1 VDD 47 kΩ 1 kΩ 47 kΩ 2.7 kΩ 1 kΩ 12 V Vi ≤ VGS 2200 μF PW I G = CONST 100 Ω 100 nF D.U.T. VG AM01470v1 A D D.U.T. S B G A A B B RG G FAST DIODE D S L=100 µH µF 3.3 1000 µF VDDΩ D.U.T. V(B R)DS S VDDVDD VD IDM ID AM01472v1 AM01473v10 VGS 90% VDS ton 90% 10% 90% 10% td(on) tr t td(off) tf 10% off

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 TO-220 type A package information

Figure 19: TO-220 type A package outline

Table 9: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95

5 Revision history

Table 10: Document revision history Date Revision Changes 03-Sep-2013 1 Initial release. 03-Apr-2014 2 Document status promoted from preliminary to production data. Updated new section curves. Minor text changes. 13-Mar-2015 3 Minor text edits throughout document On cover page: updated title descritpion, features table and descritpion In section 1 Electrical ratings: renamed and updated Table 5 "Static" (was On/off states), Table 6 "Dynamic", Table 7 "Switching times", Table 8 "Source-drain diode" In section 2 Electrical characteristics: updated Table 2 "Absolute maximum ratings" and Table 4 "Avalanche charateristics"; updated Section 2.1 Electrical characteristics (curves)