STP90N55F4 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 13

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100% avalanche tested

Applications

■ Switching applications

Description

This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Pulse width limited by safe operating area

Table 3. Thermal data

2 Electrical characteristics

Table 4. On/off states Table 5. Dynamic Table 6. Switching times

Table 7. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BV DSS vs temperature Figure 7. Static drain-source on resistance

3 Test circuits

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test Figure 17. Unclamped inductive wavefor m Figure 18. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Table 8. TO-220 type A mechanical data

Figure 19. TO-220 type A drawing

5 Revision history

Table 9. Document revision history