STP8NM60FP

STP8NM60 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh™ Power MOSFET ■ TYPICAL R DS (on) = 0.9Ω ■ HIGH dv/dt AND AVALANCHE CAPABILITIES ■ 100% AVALANCHE TESTED ■ LOW INPUT CAPACITANCE AND GATE CHARGE ■ LOW GATE INPUT RESISTANCE

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies.

ORDERING INFORMATION

TYPE V DSS R DS(on) ID Pw STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 600 V 600 V 600 V 600 V <1 Ω <1 Ω <1 Ω <1 Ω 8A ( * ) 100 W 30 W 96 W 96 W SALES TYPE MARKING PACKAGE PACKAGING STP8NM60 P8NM60 TO-220 TUBE STP8NM60FP P8NM60FP TO-220FP TUBE STD5NM60T4 D5NM60 DPAK TAPE & REEL STD5NM60-1 D5NM60 IPAK TUBE TO-220 TO-220FP DPAK TO-252 IPAK TO-251 INTERNAL SCHEMATIC DIAGRAM

STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 ABSOLUTE MAXIMUM RATINGS (/circle6 ) Pulse width limited by safe operating area (1) ISD ≤5A, di/dt≤400A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA AVALANCHE CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Value Unit STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 VDS Drain-source Voltage (VGS =0 ) 600 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 600 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 8 8 (*) 5 A ID Drain Current (continuous) at TC = 100°C 5 5 (*) 3.1 A IDM (/circle6 ) Drain Current (pulsed) 32 32 (*) 20 A PTOT Total Dissipation at TC = 25°C 100 30 96 W Derating Factor 0.8 0.24 0.4 W/°C dv/dt (1) Peak Diode Recovery voltage slope 15 15 15 V/ns VISO Insulation Withstand Voltage (DC) - 2500 - V Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 -55 to 150 TO-220 TO-220FP DPAK IPAK Rthj-case Thermal Resistance Junction-case Max 1.25 4.16 1.3 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) 2.5 A EAS Single Pulse Avalanche Energy (starting Tj= 25 °C, ID =IAR ,VDD =5 0V ) 200 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating VDS = Max Rating, TC = 125 °C µA µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ± 30V ±100 nA VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250µA 345V R DS(on) Static Drain-source On Resistance VGS =1 0 V ,ID = 2.5 A 0.9 1 Ω

STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS =ID(on)xR DS(on)max, ID = 2.5A 2.4 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =2 5 V ,f=1M H z ,VGS = 0 440 100 pF pF pF C oss eq.(2) Equivalent Output Capacitance VGS =0 V ,VDS = 0V to 480V 50 pF R G Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 4 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =3 0 0V ,ID = 2.5 A R G = 4.7Ω VGS =1 0V (Resistive Load see, Figure 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =4 0 0 V ,ID =5A , VGS =1 0 V 18 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID = 2.5 A R G =4 . 7Ω VGS =1 0V (Resistive Load see, Figure 3) ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID =5A , R G =4 . 7Ω, VGS = 10V (Inductive Load see, Figure 5) ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit I SD ISDM (2) Source-drain Current Source-drain Current (pulsed) A A VSD (1) Forward On Voltage ISD = 5 A, VGS =0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 5 A, di/dt = 100A/µs VDD =1 0 0V ,Tj=2 5 ° C (see test circuit, Figure 5) 300 1950 ns µC A trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs VDD =1 0 0V ,Tj=1 5 0 ° C (see test circuit, Figure 5) 445 3005 13.5 ns µC A

STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 Safe Operating Area For TO-220FP Safe Operating Area For TO-220 Thermal Impedance For TO-220 Safe Operating Area For DPAK/IPAK Thermal Impedance For TO-220FP Thermal Impedance For DPAK/IPAK

STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 Transconductance Static Drain-source On Resistance Transfer CharacteristicsOutput Characteristics Capacitance VariationsGate Charge vs Gate-source Voltage

STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics

STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load

STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 DIM. mm. inch A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA

STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 A B D E H G ¯ F 123F2 L4L5 DIM. mm. inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA

STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 DIM. mm inch A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0 o 8o 0o 0o P032P_B TO-252 (DPAK) MECHANICAL DATA

STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 DIM. mm inch A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A C H D LL2 1 3 = = B E G = = = = TO-251 (IPAK) MECHANICAL DATA 0068771-E

STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* DPAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY 2500 2500 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 TAPE MECHANICAL DATA All dimensions are in millimetersAll dimensions are in millimeters

STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com