STP8NK80Z

STP8NK80Z STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

N-CHANNEL 800V - 1.3Ω - 6.2A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET ■ TYPICAL R DS (on) = 1.3Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ■ LIGHTING

ORDERING INFORMATION

TYPE V DSS R DS(on) ID Pw STP8NK80Z STP8NK80ZFP STW8NK80Z 800 V 800 V 800 V < 1.5Ω < 1.5Ω < 1.5Ω 6.2 A 6.2 A 6.2 A 140 W 30 W 140 W SALES TYPE MARKING PACKAGE PACKAGING STP8NK80Z P8NK80Z TO-220 TUBE STP8NK80ZFP P8NK80ZFP TO-220FP TUBE STW8NK80Z W8NK80Z TO-247 TUBE TO-220 TO-220FP TO-247 INTERNAL SCHEMATIC DIAGRAM

STP8NK80Z - STP8NK80ZFP - STW8NK80Z ABSOLUTE MAXIMUM RATINGS (/circle6 ) Pulse width limited by safe operating area (1) ISD ≤6.2A, di/dt≤200 A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA AVALANCHE CHARACTERISTICS GATE-SOURCE ZENER DIODE PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Value Unit STP8NK80Z - STW8NK80Z STP8NK80ZFP VDS Drain-source Voltage (VGS =0 ) 800 V V DGR Drain-gate Voltage (RGS =2 0kΩ ) 800 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 6.2 6.2 (*) A ID Drain Current (continuous) at TC = 100°C 3.9 3.9 (*) A IDM (/circle6 ) Drain Current (pulsed) 24.8 24.8 (*) A PTOT Total Dissipation at TC = 25°C 140 30 W Derating Factor 1.12 0.24 W/°C VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5 KΩ) 4000 V dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tj Tstg Operating Junction Temperature Storage Temperature - 5 5t o1 5 0 ° C TO-220 TO-220FP TO-247 Rthj-case Thermal Resistance Junction-case Max 0.89 4.2 0.89 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) 6.2 A E AS Single Pulse Avalanche Energy (starting Tj= 25°C, ID =IAR ,VDD =5 0V ) 300 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit BV GSO Gate-Source Breakdown VoltageIgs=± 1 mA (Open Drain) 30 V

STP8NK80Z - STP8NK80ZFP - STW8NK80Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. C oss eq.is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS . Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1m A ,VGS = 0 800 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating VDS = Max Rating, TC = 125 °C µA µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 100 µA 3 3.75 4.5 V R DS(on) Static Drain-source On Resistance VGS =1 0V ,ID = 3.1 A 1.3 1.5 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS =1 5V,ID = 3.1 A 5.2 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V ,f=1M H z ,VGS = 0 1320 143 pF pF pF C oss eq.(3) Equivalent Output Capacitance VGS =0 ,VDS = 640 V 58 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =4 0 0V ,ID = 3.1 A R G = 4.7Ω ,VGS =1 0V (Resistive Load see, Figure 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =6 4 0V ,ID = 6.2 A, VGS =1 0V 8.5 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 400 V, ID = 3.1 A R G =4 . 7Ω VGS =1 0V (Resistive Load see, Figure 3) ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 640V, ID = 6.2 A, R G =4 . 7Ω, VGS =1 0V (Inductive Load see, Figure 5) ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 6.2 24.8 A A V SD (1) Forward On Voltage ISD = 6.2 A, VGS =0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6.2 A, di/dt = 100 A/µs VDD =5 0V ,Tj= 150°C (see test circuit, Figure 5) 460 2990 ns nC A

STP8NK80Z - STP8NK80ZFP - STW8NK80Z Thermal Impedance For TO-247Safe Operating Area For TO-247 Thermal Impedance For TO-220FPSafe Operating Area For TO-220FP Safe Operating Area For TO-220 Thermal Impedance For TO-220

STP8NK80Z - STP8NK80ZFP - STW8NK80Z Capacitance VariationsGate Charge vs Gate-source Voltage Transconductance Transfer CharacteristicsOutput Characteristics Static Drain-source On Resistance

STP8NK80Z - STP8NK80ZFP - STW8NK80Z Maximum Avalanche Energy vs Temperature Normalized BVDSS vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Gate Threshold Voltage vs Temp.

STP8NK80Z - STP8NK80ZFP - STW8NK80Z Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load

STP8NK80Z - STP8NK80ZFP - STW8NK80Z DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

STP8NK80Z - STP8NK80ZFP - STW8NK80Z A B D E H G ¯ F 123F2 L4L5 DIM. mm. inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA

STP8NK80Z - STP8NK80ZFP - STW8NK80Z DIM. mm inch A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P TO-247 MECHANICAL DATA

STP8NK80Z - STP8NK80ZFP - STW8NK80Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com