STP8N120K5 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 13

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220 type A package information

Features

Order code VDS RDS(on) max. ID PTOT STP8N120K5 1200 V 2.00 Ω 6 A 130 W

  • Industry’s lowest R DS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STP8N120K5 Product summary Order code STP8N120K5 Marking 8N120K5 Package TO-220 Packing Tube N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-220 package STP8N120K5 Datasheet DS12529 - Rev 3 - May 2018 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width limited by safe operating area
  2. I SD ≤ 6 A, di/dt ≤ 100 A/μs, VDS peak ≤ V(BR)DSS

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified Table 4. On-/off-states

  1. Defined by design, not subject to production test.

Table 5. Dynamic characteristics

  1. C o(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
  2. C o(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

Table 6. Switching times

Electrical characteristics

Table 7. Source-drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Table 8. Gate-source Zener diode The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. additional external componentry.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. STP8N120K5

Package information

4.1 TO-220 type A package information

Figure 19. TO-220 type A package outline

Table 9. TO-220 type A package mechanical data

Revision history

Table 10. Document revision history 05-Apr-2018 1 Initial release. The document status is preliminary data. Figure 5. Gate charge vs gate-source voltage. 30-May-2018 3 Document status promoted from preliminary to production data.