STP85NF55_V01 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 18
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 D²PAK (TO-263) type A package information
- 4.2 D²PAK packing information
- 4.3 TO-220 type A package information
Features
Type VDS RDS(on) max. ID STB85NF55T4 55 V 8.0 mΩ 80 A STP85NF55
- AEC-Q101 qualified
- Exceptional dv/dt capability
- 100% avalanche tested
- Low gate charge
Applications
- Switching applications
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STB85NF55T4 STP85NF55 Product summary Order code STB85NF55T4 Marking B85NF55 Package D²PAK Packing Tape and reel Order code STP85NF55 Marking P85NF55 Package TO-220 Packing Tube Automotive-grade N-channel 55 V, 6.2 mΩ typ., 80 A, STripFET™ II Power MOSFETs in D²PAK and TO-220 packages STB85NF55T4, STP85NF55 Datasheet DS2569 - Rev 12 - January 2019 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Current limited by package.
- Pulse width limited by safe operating area.
- I SD ≤ 80 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX
Table 2. Thermal data
2 Electrical characteristics
TCASE = 25 °C unless otherwise specified Table 3. On/off states
- Defined by design, not subject to production test.
Table 4. Dynamic
- Pulsed: pulse duration=300 μs, duty cycle 1.5%
Table 5. Switching times Figure 18. Switching time
Electrical characteristics
Table 6. Source-drain diode
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Trasconductance Figure 6. Static drain-source on-resistance
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. STB85NF55T4, STP85NF55
Package information
4.1 D²PAK (TO-263) type A package information
Figure 19. D²PAK (TO-263) type A package outline
Table 7. D²PAK (TO-263) type A package mechanical data
Figure 20. D²PAK (TO-263) recommended footprint (dimensions are in mm)
4.2 D²PAK packing information
Figure 21. D²PAK tape outline
Figure 22. D²PAK reel outline Table 8. D²PAK tape and reel mechanical data
4.3 TO-220 type A package information
Figure 23. TO-220 type A package outline
Table 9. TO-220 type A package mechanical data
Revision history
Table 10. Document revision history 21-Jun-2004 8 Updated SOA and application. Modified Table 6. Source-drain diode. Section 4.3 TO-220 type A package information.