STB85NF55 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

N-CHANNEL 55V - 0.0062 Ω - 80A D2PAK/TO-220 STripFET™ II POWER MOSFET ■ TYPICAL R DS (on) = 0.0062 Ω ■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility.

APPLICATIONS

■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT TYPE VDSS R DS(on) ID STB85NF55 STP85NF55 55 V 55 V <0.008 Ω <0.008 Ω 80 A 80 A TO-220 D 2PAK TO-263 (Suffix “T4”) ABSOLUTE MAXIMUM RATINGS (•)Current Limited by Package (••) Pulse width limited by safe operating area (1)ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX .(2) Starting Tj = 25 oC I D = 40A VDD = 25V Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 55 V VGS Gate- source Voltage ± 20 V ID (•) Drain Current (continuous) at TC = 25°C 80 A ID Drain Current (continuous) at TC = 100°C 80 A IDM (••) Drain Current (pulsed) 320 A Ptot Total Dissipation at TC = 25°C 300 W Derating Factor 2.0 W/°C dv/dt (1) Peak Diode Recovery voltage slope 10 V/ns EAS (2) Single Pulse Avalanche Energy 980 mJ Tstg Storage Temperature -55 to 175 °CTj Max. Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (*) DYNAMIC Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 0.5 62.5 300 °C/W °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 55 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 234V R DS(on) Static Drain-source On Resistance VGS = 10 V I D =40 A 0.0062 0.008 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS = 15V I D = 40 A 120 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz VGS = 0 3700 900 310 pF pF pF

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 30 V I D = 40 A R G = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 100 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 30V ID =80A VGS =10V (see test circuit, Figure 4) 120 150 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 30 V I D = 40 A R G = 4.7Ω, V GS = 10 V (Resistive Load, Figure 3) ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 320 A A VSD (*) Forward On Voltage ISD = 80 A V GS = 0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A di/dt = 100A/µs VDD = 25 V T j = 150°C (see test circuit, Figure 5) 210 5.5 ns nC A Thermal Impedance ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area

Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . .

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

DIM. mm. inch. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.394 0.409 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0° 8° 0° 8° D 2PAK MECHANICAL DATA

DIM. mm. inch. A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.40 0.645 L3 28.90 1.137 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 TO-220 MECHANICAL DATA

DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R5 0 1 . 5 7 4 W 23.7 24.3 0.933 0.956 DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA * on sales type TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* D 2PAK FOOTPRINT TAPE MECHANICAL DATA

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics  2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com