N-channel 150 V, 0.015 , 85 A TO-220, H²PAK STripFET™ DeepGATE™ Power MOSFET

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ Extremely low on-resistance RDS(on) ■ 100% avalanche tested Application ■ Switching applications

Description

This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Pulse width limited by safe operating area

Table 3. Thermal data

  1. When mounted on 1inch² FR-4 board, 2 oz Cu.

2 Electrical characteristics

Table 4. On/off states Table 5. Dynamic Table 6. Switching times

Table 7. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

3 Test circuits

Figure 2. Switching times test circuit for Figure 3. Gate charge test circuit Figure 4. Test circuit for inductive load Figure 5. Unclamped inductive load test Figure 6. Unclamped inductive wavefor m Figure 7. Switching time waveform

4 Package mechanical data

specifications, grade definitions and product status are available at: www.st.com. Table 8. TO-220 mechanical data

Figure 8. TO-220 drawing

Figure 9. H²PAK 2 leads drawing Table 9. H²PAK 2 leads mechanical data

Figure 10. H²PAK 2 recommended footprint

5 Revision history

Table 10. Document revision history